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SACPM 2011: Proceedings of the 4th South African Conference on Photonic Materials, held in Kariega Game Reserve, South Africa, 2-6 May 2011VENTER, Andrè; AURET, Danie; SWART, Hendrik C et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, issn 0921-4526, 234 p.Conference Proceedings

Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDSEVANS-FREEMAN, Jan; VERNON-PARRY, Karen; ALLEN, Martin et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, issn 0921-4526, 242 p.Conference Proceedings

Proceedings of the 21st international conference on defects in semiconductors, ICDS-21, Giessen, Germany, 16-20 July 2001HOFMANN, Detlev M.Physica. B, Condensed matter. 2001, Vol 308-10, issn 0921-4526, 1254 p.Conference Proceedings

Proceedings of the Third South African Conference on Photonic Materials: SACPM 2009: held in Mabula Game Lodge, South Africa 23-27 March 2009VENTER, André; BOTHA, Reinhardt; AURET, Danie et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, issn 0921-4526, 178 p.Conference Proceedings

On photocurrent (and EPR) study of defect levels in CVD diamondROSA, J; VANECEK, M; NESLADEK, M et al.Physica status solidi. A. Applied research. 1999, Vol 172, Num 1, pp 113-122, issn 0031-8965Article

Semiconductor surface studiesJOANNOPOULOS, J. D; CHO, K; VILLENEUVE, P. R et al.RLE Progress report. 1997, Num 139, pp 171-175, issn 0163-9218Article

Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005OSHIYAMA, A; MAEDA, K; ITOH, K. M et al.Physica. B, Condensed matter. 2006, Vol 376-77, issn 0921-4526, 1010 p.Conference Proceedings

Electronic localization for point defect computationsVAIL, John M.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 211-215, issn 1042-0150Conference Paper

Distortion of a complex defect with a weak bindingGAVRICHKOV, V. A; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 10, pp 921-924, issn 1063-7826Article

Positron deep level transient spectroscopy : A new application of positron annihilation to semiconductor physicsBELING, C. D; FUNG, S; AU, H. L et al.Applied surface science. 1997, Vol 116, pp 121-128, issn 0169-4332Conference Paper

Conference on Photonic MaterialsLEITCH, Andrew; BOTHA, Reinhardt.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 1, pp 129-170, issn 1862-6300, 41 p.Conference Paper

Proceedings of the 22nd International Conference on Defects in Semiconductors, ICDS-22, Aarhus, Denmark, 28 July-1 August 2003BONDE NIELSEN, K; NYLANDSTED LARSEN, A; WEYER, G et al.Physica. B, Condensed matter. 2003, Vol 340-42, issn 0921-4526, 1206 p.Conference Proceedings

Dislocation-related luminescence properties of siliconSTEINMAN, E. A; GRIMMEISS, H. G.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 124-129, issn 0268-1242Article

Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25BAGRAEV, Nikolay T; EMTSEV, Vadim V; ESTREICHER, Stefan K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, issn 0921-4526, 777 p.Conference Proceedings

Analysis of the deep-level transient spectra by the method of mathematical modelingSHMATOV, A. A; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 8, pp 710-712, issn 1063-7826Article

The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cellsJUNG, Sungwook; GONG, Deayoung; JUNSIN YI et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 546-550, issn 0927-0248, 5 p.Article

Characterization of semi-insulating GaAs:Cr by means of DC-CPM techniqueTIBERMACINE, T; MERAZGA, A.Revue des énergies renouvelables. 2009, Vol 12, Num 1, pp 125-135, issn 1112-2242, 11 p.Article

Role of defect states on electrical and optical properties in CdSe nanorod thin filmsCRETI, A; LEO, G; PERSANO, A et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 6, pp 2063-2065, issn 1386-9477, 3 p.Conference Paper

Light soaking effect on defect states distribution of Hydrogenated amorphous silicon investigated By means of constant photocurrent techniqueTIBERMACINE, T; MERAZGA, A.Revue des énergies renouvelables. 2010, Vol 13, Num 1, pp 63-70, issn 1112-2242, 8 p.Article

Defect absorption and optical transitions in hydrogenated amorphous siliconTHEVARIL, Jasmin J; O'LEARY, Stephen K.Solid state communications. 2010, Vol 150, Num 37-38, pp 1851-1855, issn 0038-1098, 5 p.Article

Excited oxygen-deficient center in silicon dioxide as a structurally non-rigid, mixed-valence complexTUGUSHEV, V. V; GOLANT, K. M.Journal of non-crystalline solids. 1998, Vol 241, Num 2-3, pp 166-173, issn 0022-3093Article

Electronic characterization of defect sites on Si(001)-(2 x 1) by STMUKRAINTSEV, V. A; DOHNALEK, Z; YATES, J. T et al.Surface science. 1997, Vol 388, Num 1-3, pp 132-140, issn 0039-6028Article

Orientational L, D and polarisation defects as coupled quantum non-linear excitations in hydrogen-bonded systemsGAIDIDEI, Y; FLYTZANIS, N; YANOVITSKII, O et al.Journal of molecular structure. 1994, Vol 322, pp 157-164, issn 0022-2860Conference Paper

A study of dislocations, precipitates, and deep level EL2 in LEC GaAs grown under Ga-rich conditionsFRIGERI, C; WEYHER, J. L; ALT, H. C et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 657-663, issn 0031-8965Conference Paper

On the origin of EBIC defect contrast in silicon : a reflection on injection and temperature dependent investigationsKITTLER, M; SEIFERT, W.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 687-693, issn 0031-8965Conference Paper

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