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Results 1 to 25 of 46963

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Differenzierte Analytik der Geometrie und Intensität von Siebmarkierungen = Detailed analysis of geometry and intensity of wire marksPRAST, H; GÖTTSCHING, L.Das Papier (Darmstadt). 1990, Vol 44, Num 10, pp 529-537, issn 0031-1340, 9 p.Article

The simplest quantum model supporting the kibble-zurek mechanism of topological defect production : Landau-Zener transitions from a new perspectiveDAMSKI, Bogdan.Physical review letters. 2005, Vol 95, Num 3, pp 035701.1-035701.4, issn 0031-9007Article

Cascade characteristics and defect productionGHONIEM, N; KIRITANI, M.Journal of nuclear materials. 1991, Vol 179-81, Num B, pp 1201-1212, issn 0022-3115Conference Paper

Sensitive ground-fault relayingNOVAK, T; MORLEY, L. A; TRUTT, F. C et al.IEEE transactions on industry applications. 1988, Vol 24, Num 5, pp 853-861, issn 0093-9994Conference Paper

Determination of the local density of vibrational states of surface point defects by the Bethe-Peierls approximate methodKAMINSKI, B; KAPELEWSKI, J.Journal of Technical Physics. 1986, Vol 27, Num 4, pp 387-397, issn 0324-8313Article

Intensité des écoulements de dislocations coins et des pores lacunaires, rendant compte de la recombinaison des défauts ponctuelsGOLUBOV, S. I.Fizika metallov i metallovedenie. 1989, Vol 67, Num 1, pp 36-43, issn 0015-3230Article

Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions : Polycrystalline SemiconductorsMÖLLER, H. J; KADEN, T; SCHOLZ, S et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 1, pp 207-220, issn 0947-8396, 14 p.Article

Initial stages of oxidation of Ge(111)-c(2 × 8) studied by scanning tunneling microscopyKLITSNER, T; BECKER, R. S; VICKERS, J. S et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 4, pp 1817-1824, issn 0163-1829Article

On Vertical Drag Defects Formation During Direct Chill (DC) Casting of Aluminum BilletsCARLBERG, Torbjörn; JARFORS, Anders E. W.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2014, Vol 45, Num 1, pp 175-181, issn 1073-5615, 7 p.Article

Formation mechanism of defects in annealed InPYUJIE HAN; XUNLANG LIU; JINGHUA JIAO et al.SPIE proceedings series. 1998, pp 346-353, isbn 0-8194-2873-6Conference Paper

Annealing kinetics of the dicarbon radiation-damage center in crystalline siliconDAVIES, G; KUN, K. T; READE, T et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 22, pp 12146-12157, issn 0163-1829Article

On the stability of topologically non-trivial point defectsMORI, H; NAKANISHI, H.Journal of the Physical Society of Japan. 1988, Vol 57, Num 4, pp 1281-1286, issn 0031-9015Article

Abstracts and data compilationsFISHER, D. J.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1992, Vol 86-87, issn 1012-0386, 300 p.Serial Issue

General references = Références généralesDiffusion and defect data. 1987, Vol 55-56, pp 249-297, issn 0377-6883Article

Santé/Environnement: Enjeux des données épidémiologiques dans les décisions de politique sanitaireADENOT, Marc.Environnement & technique. 2011, Num 307, pp 52-56, issn 0986-2943, 5 p.Article

Defects and Minor Phases in O+ and Zr+ Ion Co-implanted SrTiO3WEILIN JIANG; BOWDEN, Mark E; ZIHUA ZHU et al.Industrial & engineering chemistry research. 2012, Vol 51, Num 2, pp 621-628, issn 0888-5885, 8 p.Article

Fehler, die wir machen auch wir AltenBRINER, V.Revue médicale suisse. 2012, Vol 8, Num 325, issn 1660-9379, p. 192Conference Paper

A selective review of the quantification of defect dynamics in growing Czochralski silicon crystalsKULKARNI, Milind S.Industrial & engineering chemistry research. 2005, Vol 44, Num 16, pp 6246-6263, issn 0888-5885, 18 p.Article

Atomic Bond Deficiency Defects in Amorphous Metals : Hume-Rothery Symposium on thermodynamics and Diffusion Coupling in Alloys - Application Driven ScienceAIWU ZHU; SHIFLET, Gary J; JOSEPH POON, S et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2012, Vol 43, Num 10, pp 3501-3509, issn 1073-5623, 9 p.Article

Defect-Related Physical-Profile-Based X-Ray and Neutron Line Profile Analysis : Neutron and X-Ray Studies of Advanced MaterialsUNGAR, Tamas; BALOGH, Levente; RIBARIK, Gábor et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2010, Vol 41, Num 5, pp 1202-1209, issn 1073-5623, 8 p.Article

Sheet hole and defect identificationLANDRY, H. J.Tappi journal. 2000, Vol 83, Num 5, pp 64-67, issn 0734-1415Article

Selected papers/Identification of defects in semiconductors, symposium: 7th. international summer school on defects in crystals, Szczyrk, Poland, 23-30 May, 1985FIGIELSKI, T.Acta physica Polonica. A. 1986, Vol 69, Num 3, pp 379-476, issn 0587-4246Conference Proceedings

Power system ground fault current distribution using the double-sided elimination methodWEITZENFELD, G.IEEE transactions on power systems. 1986, Vol 1, Num 1, pp 17-25, issn 0885-8950Conference Paper

Influence des précipités sur l'efficacité de l'absorption des défauts ponctuels d'une dislocation coinSAMSONIDZE, G. G; TRUSHIN, YU. V.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 1, pp 42-51, issn 0044-4642Article

Capillary puddle vibrations linked to casting-defect formation in planar-flow melt spinningBYRNE, Cormac J; THEISEN, Eric A; REED, Barry L et al.Metallurgical and materials transactions. B, Process metallurgy and materials processing science. 2006, Vol 37, Num 3, pp 445-456, issn 1073-5615, 12 p.Article

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