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Mouvement et croissance d'un macrodéfaut dans le champ des concentrations de défauts ponctuelsSLEZOV, V. V; TANATAROV, L. V.Metallofizika (Kiev). 1988, Vol 10, Num 2, pp 90-93, issn 0204-3580Article

Equilibration in defect clustering reactionsMOON, A. R; PHILIPS, M. R; BLAIR, D. G et al.Solid state communications. 1990, Vol 76, Num 7, pp 881-882, issn 0038-1098, 2 p.Article

Mouvement spontané d'inclusions liquides d'un cristal près de la surfaceSTARUKHINA, L. V; KRUZHANOV, V. S.Kristallografiâ. 1987, Vol 32, Num 4, pp 1068-1069, issn 0023-4761Article

Defektoemkost struktury mineralovREVNIVTSEV, V. I; DOLIVO-DOBROVOL'SKAYA, G. I; VLADIMIROV, P. S et al.Doklady Akademii nauk SSSR. 1988, Vol 301, Num 1, pp 193-196, issn 0002-3264Article

Some remarks on domain structures generated by disclinationsLEONOV, I. A.Physics letters. A. 1990, Vol 145, Num 8-9, pp 449-450, issn 0375-9601Article

Influence of the interaction potential on defect jumps in a Lennard-Jones latticeVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5933-5942, issn 0022-3719Article

The dynamic behaviour of a crystal during defect jumps. III: Distinct correlations during vacancy jumps from molecular dynamics calculationsVOGELSANG, R; HOHEISEL, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 35, pp 5923-5931, issn 0022-3719Article

Influence des contraintes élastiques sur la transformation des amas de défauts dans les semiconducteursSKUPOV, V. D; TETEL'BAUM, D. I.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 8, pp 1495-1497, issn 0015-3222Article

Influence des impuretés isovalentes sources de contraintes élastiques dans le cristal sur le comportement des défauts ponctuelsRYTOVA, N. S; SOLOV'EVA, E. V.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 8, pp 1380-1387, issn 0015-3222Article

Selected papers/Identification of defects in semiconductors, symposium: 7th. international summer school on defects in crystals, Szczyrk, Poland, 23-30 May, 1985FIGIELSKI, T.Acta physica Polonica. A. 1986, Vol 69, Num 3, pp 379-476, issn 0587-4246Conference Proceedings

The Mott-Litteleton method: an introductory surveyLIDIARD, A. B.Journal of the Chemical Society. Faraday Transactions II. 1989, Vol 85, Num 5, pp 341-349, issn 0300-9238, 9 p.Article

Lattice imperfections studied by use of lattice Green's functionsTHOMSON, R; ZHOU, S. J; CARLSSON, A. E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 17, pp 10613-10622, issn 0163-1829Article

Some considerations on the deffect chemistry on ionic solidsFERNANDES, V. M. G; SEQUEIRA, C. A. C.Czechoslovak journal of physics. 1990, Vol 40, Num 10, pp 1140-1155, issn 0011-4626, 16 p.Article

Interaction de l'oxygène et des défauts du réseau et atomes d'impureté dans le siliciumGUTSEV, G. L; MYAKEN'KAYA, G. S.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1042-1048, issn 0015-3222Article

Influence des précipités sur l'efficacité de l'absorption des défauts ponctuels d'une dislocation coinSAMSONIDZE, G. G; TRUSHIN, YU. V.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 1, pp 42-51, issn 0044-4642Article

Chathodoluminescence measurement of surfaces in reflection high-energy electron diffraction experimentsMIYAUCHI, M; SHIBATA, N.Japanese journal of applied physics. 1993, Vol 32, Num 8B, pp L1179-L1181, issn 0021-4922, 2Article

Vitesse de croissance diffusionnelle des macrodéfauts dans les ensemblesSLEZOV, V. V.Fizika tverdogo tela. 1989, Vol 31, Num 8, pp 20-30, issn 0367-3294Article

Proceedings of the international conference on defects in insulating crystals: [selected papers], August 29-September 2, 1988, ParmaCAPELLETTI, Rosanna.Crystal lattice defects and amorphous materials. 1989, Vol 18, Num 1-3, issn 0732-8699, 417 p.Conference Proceedings

Revealing of lattice defects on {001} GaAs surfaces by KI:I:H2SO4-etchantGOTTSCHALCH, V; HERRNBEGER, H.Journal of materials science letters. 1990, Vol 9, Num 1, pp 7-10, issn 0261-8028, 4 p.Article

Gauge theory of defect systems and equivalence principleHOLZ, A.Physica status solidi. B. Basic research. 1987, Vol 144, Num 1, pp 49-71, issn 0370-1972Article

Réaction oscillante de réarrangement des défauts dans le siliciumKUCHINSKIJ, P. V; LOMAKO, V. M; SHAKHLEVICH, L. N et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 45, Num 7, pp 350-352, issn 0370-274XArticle

The continuized crystal: a bridge between micro- and macromechanics?KRÖNER, E.Zeitschrift für angewandte Mathematik und Mechanik. 1986, Vol 66, Num 5, pp T.284-T.292, issn 0044-2267Article

On the formation of swirl defects in silicon and germaniumTOGNATO, R.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp K133-K136, issn 0031-8965Article

Quantum theory of vibron solitons -coherent states of a vibron-phonon system and self-localized modesTAKENO, S.Journal of the Physical Society of Japan. 1990, Vol 59, Num 9, pp 3127-3141, issn 0031-9015Article

Beam injection assessment of defects in semiconductors, Meudon-Bellevue, 18-20 July, 1988CASTAING, J; MARFAING, Y; MAURICE, J. -L et al.Journal de physique. Colloques. 1989, Vol 24, Num 6, pp XIII-192, issn 0449-1947, pConference Proceedings

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