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Aberration-corrected HRTEM of defects in strained La₂CuO₄ thin films grown on SrTiO₃HOUBEN, Lothar.Journal of materials science. 2006, Vol 41, Num 14, pp 4413-4419, issn 0022-2461, 7 p.Conference Paper

Atomic structure of defects in GaN:Mg grown with Ga polarityLILIENTAL-WEBER, Z; TOMASZEWICZ, T; ZAKHAROV, D et al.Physical review letters. 2004, Vol 93, Num 20, pp 206102.1-206102.4, issn 0031-9007Article

Implantation of size-selected silver clusters into graphite: Linearity of implantation depth vs. scaled momentumSEMINARA, L; CONVERS, P; MONOT, R et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2004, Vol 29, Num 1, pp 49-56, issn 1434-6060, 8 p.Article

Be doping in GaAs by intermittent AsH₃/TEG supply in an ultra-high vacuumOYAMA, Yutaka; OHNO, Takeo; SUTO, Ken et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 61-68, issn 0022-0248, 8 p.Article

Boron-δ doped Si grown by ultra-high vacuum chemical vapor depositionPEI WEI CHIEN; SAN LEIN WU; SHIH CHIN LEE et al.Materials chemistry and physics. 2003, Vol 77, Num 2, pp 426-429, issn 0254-0584, 4 p.Article

Deviations from exact epitaxial positions in heteroepitaxyPETKOVA, A; WOLLSCHLÄGER, J; GÜNTER, H.-L et al.Surface science. 2003, Vol 542, Num 3, pp 211-220, issn 0039-6028, 10 p.Article

Growth mechanism of Fe nanoisland array on Cu(001)-c(2 × 2)N surfacesOHNO, S; NAKATSUJI, K; KOMORI, F et al.Surface science. 2003, Vol 523, Num 1-2, pp 189-198, issn 0039-6028, 10 p.Article

High-resolution identification of 1/2 <110> stacking faults in epitaxial Ba_0.3Sr_0.7TiO₃ thin filmsLU, C. J; BENDERSKY, L. A; CHANG, K et al.Philosophical magazine (2003. Print). 2003, Vol 83, Num 13, pp 1565-1586, issn 1478-6435, 22 p.Article

Microstructural accommodation of excess Ru in epitaxial SrRuO₃ filmsSANG HO OH; CHAN GYUNG PARK.Philosophical magazine (2003. Print). 2003, Vol 83, Num 11, pp 1307-1327, issn 1478-6435, 21 p.Article

Phosphorus incorporation during InP(001) homoepitaxial growth by solid source molecular beam epitaxyBARNES, G. W; TOK, E. S; NEAVE, J. H et al.Surface science. 2003, Vol 531, Num 3, pp L383-L387, issn 0039-6028Article

Diffusion of hydrogen in undoped, p-type and n-type doped diamondsSAGUY, C; CYTERMANN, C; FIZGEE, B et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 623-631, issn 0925-9635, 9 p.Conference Paper

X-ray studies of Al_xGA_1-xAs[Al_xGa_1-xAs] implanted with 1.5 MeV As ionsWIERZCHOWSKI, W; WIETESKA, K; GRAEFF, W et al.Vacuum. 2003, Vol 70, Num 2-3, pp 115-121, issn 0042-207X, 7 p.Conference Paper

EIS capacitance diagnosis of nanoporosity effect on the corrosion protection of DLC filmsZENG, A; LIU, E; ANNERGREN, I. F et al.Diamond and related materials. 2002, Vol 11, Num 2, pp 160-168, issn 0925-9635Article

Controlled arsenic diffusion in epitaxial Cd_xHg_1-xTe layers in the evaporation-condensation-diffusion processVLASOV, A; PYSAREVSKY, V; STORCHUN, O et al.Thin solid films. 2002, Vol 403-04, pp 144-147, issn 0040-6090Conference Paper

PAC study of Ni-irradiated Sb filmsKULINSKA, A; LIEB, K.-P; UHRMACHER, M et al.Surface & coatings technology. 2002, Vol 158-59, pp 225-227, issn 0257-8972Conference Paper

Disconnections at translation domain boundaries in epitaxial GaNDIMITRAKOPULOS, G. P; KEHAGIAS, Th; KOMNINOU, Ph et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 12709-12715, issn 0953-8984, 7 p.Conference Paper

Structural studies of silver island films probed by hyper-Rayleigh scattering and atomic force microscopyDIDENKO, N. V; KIM, E. M; MUZYCHENKO, D. A et al.Surface science. 2002, Vol 507-10, pp 649-654, issn 0039-6028Conference Paper

Misfit dislocation interactions in low mismatch p/p⁺ SiFEICHTINGER, P; POUST, B; GOORSKY, M. S et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 10A, pp A128-A132, issn 0022-3727Article

Vanadium doping of 4H SiC from a solid source : Photoluminescence investigationKOSHKA, Y; MAZZOLA, M; YINGQUAN, S et al.Journal of electronic materials. 2001, Vol 30, Num 3, pp 220-223, issn 0361-5235Article

Diagnostics of Si multi-δ-doped GaAs layers by raman spectroscopy on bevelled structuresSRNANEK, R; GURNIK, P; HARMATHA, L et al.Applied surface science. 2001, Vol 183, Num 1-2, pp 86-92, issn 0169-4332Article

Modeling of threading dislocation reduction in growing GaN layersMATHIS, S. K; ROMANOV, A. E; CHEN, L. F et al.Journal of crystal growth. 2001, Vol 231, Num 3, pp 371-390, issn 0022-0248Conference Paper

Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursorKURABAYASHI, T; KIKUCHI, H; HAMANO, T et al.Journal of crystal growth. 2001, Vol 229, pp 147-151, issn 0022-0248Conference Paper

Defect studies of diamond hard coatingsHEMPEL, A; HEMPEL, M; HÄRTING, M et al.Radiation effects and defects in solids. 2001, Vol 156, Num 1-4, pp 215-220, issn 1042-0150Conference Paper

Distribution of the lateral correlation length in GaN epitaxial layersKOZLOWSKI, J; PASZKIEWICZ, R; KORBUTOWICZ, R et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 114-116, issn 0921-4526Conference Paper