The impact of the nanoscale on computing systemsGOLDSTEIN, Seth Copen.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 655-661, isbn 0-7803-9254-X, 1Vol, 7 p.Conference Paper

One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emittersIIDA, D; MIURA, A; OKADOME, Y et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2005-2009, issn 1862-6300, 5 p.Conference Paper

Defect reduction in non-polar (1120) GaN grown on (1 102) sapphireJOHNSTON, Carol F; KAPPERS, Menno J; MORAM, Michelle A et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 6, pp 1190-1193, issn 1862-6300, 4 p.Conference Paper

Atomistic mechanisms of fatigue in nanocrystalline metalsFARKAS, D; WILLEMANN, M; HYDE, B et al.Physical review letters. 2005, Vol 94, Num 16, pp 165502.1-165502.4, issn 0031-9007Article

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasmaNIIKURA, Chisato; KONDO, Michio; MATSUDA, Akihisa et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 42-46, issn 0022-3093, 5 p.Conference Paper

Percolation study of defect tolerance in missing-crossbar networksZWOLAK, Michael P; ZALLEN, Richard; DI VENTRA, Massimiliano et al.Solid state communications. 2002, Vol 124, Num 5-6, pp 167-170, issn 0038-1098, 4 p.Article

Etude du frottement interne de l'antimoniure d'indium contenant des densités variables de défautsMAKSIMYUK, P.A; FOMIN, A.V; GLEJ, V.A et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 292-294, issn 0367-3294Article

X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis of surfactant affected FePt spintronic filmsCHUN FENG; XUJING LI; GUANGHUA YU et al.Applied surface science. 2014, Vol 308, pp 408-413, issn 0169-4332, 6 p.Article

SEMATECH Mask ProgramYUN, Henry; RASTEGAR, Abbas; KEARNEY, Patrick et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7470, issn 0277-786X, isbn 978-0-8194-7770-5 0-8194-7770-2, 1Vol, 747005.1-747005.4Conference Paper

Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafersXIANGYANG MA; DAXI TIAN; LONGFEI GONG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 8, pp 1934-1939, issn 1862-6300, 6 p.Article

CAEN-BIST : Testing the nanofabricBROWN, Jason G; BLANTON, R. D.International Test Conference. 2004, pp 462-471, isbn 0-7803-8580-2, 1Vol, 10 p.Conference Paper

Ab-initio statistical mechanics for ordered compounds: single-defect theory vs. cluster-expansion techniquesDRAUTZ, R; SCHULTZ, I; LECHERMANN, F et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 37-44, issn 0370-1972, 8 p.Article

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in siliconVANHELLEMONT, Jan; DE GRYSE, Olivier; CLAUWS, Paul et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2341-2346, issn 1862-6300, 6 p.Article

Anderson localization in carbon nanotubes : Defect density and temperature effectsBIEL, Blanca; GARCIA-VIDAL, F. J; RUBIO, Angel et al.Physical review letters. 2005, Vol 95, Num 26, pp 266801.1-266801.4, issn 0031-9007Article

Amorphization and regrowth in Si/CoSi₂/Si heterostructuresMAEX, K; WHITE, A. E; SHORT, K. T et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5641-5647, issn 0021-8979Article

Auto-oscillations de la température et de la densité des défauts dans des lames minces sous irradiationSELISHCHEV, P. A; SUGAKOV, V. I.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2611-2615, issn 0367-3294Article

Thin film photonic crystals: synthesis and characterisationMCLACHLAN, Martyn A; JOHNSON, Nigel P; DE LA RUES, Richard M et al.Journal of material chemistry. 2004, Vol 14, Num 2, pp 144-150, issn 0959-9428, 7 p.Article

A modified vertical bridgman method for growth of high-quality Cd_1-xZn_xTe crystalsGUOQIANG LI; XIAOLU ZHANG; HUI HUA et al.Journal of electronic materials. 2005, Vol 34, Num 9, pp 1215-1224, issn 0361-5235, 10 p.Article

Dislocation nucleation and vacancy formation during high-speed deformation of fcc metalsSCHIØTZ, J; LEFFERS, T; SINGH, B. N et al.Philosophical magazine letters. 2001, Vol 81, Num 5, pp 301-309, issn 0950-0839Article

Amorphization in NanoparticlesPIOT, Lucas; LE FLOCH, Sylvie; CORNIER, Thibaut et al.Journal of physical chemistry. C. 2013, Vol 117, Num 21, pp 11133-11140, issn 1932-7447, 8 p.Article

Improvement of optical properties of post-annealed ZnO nanorodsLEE, Juneyoung; CHUNG, Jooyoung; LIM, Sangwoo et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 8, pp 2143-2146, issn 1386-9477, 4 p.Article

Spin-polarized transport in Aharonov-Bohm rings with impurities: A scattering-matrix approachCATTAPAN, G; LOTTI, P.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 43, Num 1, pp 293-301, issn 1386-9477, 9 p.Article

Investigation of surface treatment effect of catalyst on the lifetime for Cat-CVD methodHONDA, Kazuhiro; OHDAIRA, Keisuke; MATSUMURA, Hideki et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2117-2120, issn 0022-3093, 4 p.Conference Paper

Scaling region in imperfect system : Criterium opposite to the levanyuk-ginzburg oneMOROSOV, A. I; SIGOV, A. S.Ferroelectrics (Print). 2007, Vol 354, pp 120-135, issn 0015-0193, 16 p.Article

Dynamics of a quantum phase transitionZUREK, Wojciech H; DORNER, Uwe; ZOLLER, Peter et al.Physical review letters. 2005, Vol 95, Num 10, pp 105701.1-105701.4, issn 0031-9007Article