The impact of the nanoscale on computing systemsGOLDSTEIN, Seth Copen.IEEE/ACM International Conference on Computer-Aided Design. 2005, pp 655-661, isbn 0-7803-9254-X, 1Vol, 7 p.Conference Paper

Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle

Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article

The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article

One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emittersIIDA, D; MIURA, A; OKADOME, Y et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2005-2009, issn 1862-6300, 5 p.Conference Paper

Defect reduction in non-polar (1120) GaN grown on (1 102) sapphireJOHNSTON, Carol F; KAPPERS, Menno J; MORAM, Michelle A et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 6, pp 1190-1193, issn 1862-6300, 4 p.Conference Paper

Mechanisms of etch hillock formationTAN, S.-S; REED, M. L; HAN, H et al.Journal of microelectromechanical systems. 1996, Vol 5, Num 1, pp 66-72, issn 1057-7157Article

Atomistic mechanisms of fatigue in nanocrystalline metalsFARKAS, D; WILLEMANN, M; HYDE, B et al.Physical review letters. 2005, Vol 94, Num 16, pp 165502.1-165502.4, issn 0031-9007Article

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasmaNIIKURA, Chisato; KONDO, Michio; MATSUDA, Akihisa et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 42-46, issn 0022-3093, 5 p.Conference Paper

Percolation study of defect tolerance in missing-crossbar networksZWOLAK, Michael P; ZALLEN, Richard; DI VENTRA, Massimiliano et al.Solid state communications. 2002, Vol 124, Num 5-6, pp 167-170, issn 0038-1098, 4 p.Article

Use of a CMOS static memory array as a technology test vehicleSCHMITT-LANDSIEDEL, D; WINNERL, J; NEUENDORF, G et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 219-223, issn 0748-8017Article

Etude du frottement interne de l'antimoniure d'indium contenant des densités variables de défautsMAKSIMYUK, P.A; FOMIN, A.V; GLEJ, V.A et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 292-294, issn 0367-3294Article

On a connection between vacancy formation parameters and melting process in rare gas solidsLAZARIDOU, M; EFTAXIAS, K.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp K147-K149, issn 0031-8965Article

Etude de la perfection cristalline des cristaux avec une distribution de défautsVORONKOV, S. N; CHUKHOVSKIJ, F. N; PISKUNOV, D. I et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1911-1912, issn 0367-3294Article

X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis of surfactant affected FePt spintronic filmsCHUN FENG; XUJING LI; GUANGHUA YU et al.Applied surface science. 2014, Vol 308, pp 408-413, issn 0169-4332, 6 p.Article

SEMATECH Mask ProgramYUN, Henry; RASTEGAR, Abbas; KEARNEY, Patrick et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7470, issn 0277-786X, isbn 978-0-8194-7770-5 0-8194-7770-2, 1Vol, 747005.1-747005.4Conference Paper

Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafersXIANGYANG MA; DAXI TIAN; LONGFEI GONG et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 8, pp 1934-1939, issn 1862-6300, 6 p.Article

CAEN-BIST : Testing the nanofabricBROWN, Jason G; BLANTON, R. D.International Test Conference. 2004, pp 462-471, isbn 0-7803-8580-2, 1Vol, 10 p.Conference Paper

Ab-initio statistical mechanics for ordered compounds: single-defect theory vs. cluster-expansion techniquesDRAUTZ, R; SCHULTZ, I; LECHERMANN, F et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 1, pp 37-44, issn 0370-1972, 8 p.Article

Photo-induced defects and photoconductivity in amorphous siliconOKAMOTO, H; KIDA, H; HAMAKAWA, Y et al.Solid state communications. 1984, Vol 49, Num 7, pp 731-733, issn 0038-1098Article

A disorder model of melting. II: Alkali halidesVAID, B. A; SHARMA, K. C; SYAL, V. K et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 59-62, issn 0370-1972Article

Crystalline properties of multiple BP-Si layers grown on silicon substrateSUGIURA, S; YOSHIDA, T; KANEKO, Y et al.Journal of electronic materials. 1984, Vol 13, Num 6, pp 949-954, issn 0361-5235Article

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in siliconVANHELLEMONT, Jan; DE GRYSE, Olivier; CLAUWS, Paul et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 10, pp 2341-2346, issn 1862-6300, 6 p.Article

Anderson localization in carbon nanotubes : Defect density and temperature effectsBIEL, Blanca; GARCIA-VIDAL, F. J; RUBIO, Angel et al.Physical review letters. 2005, Vol 95, Num 26, pp 266801.1-266801.4, issn 0031-9007Article

Gettering of Cu and Ni impurities in SIMOX wafersJABLONSKI, J; MIYAMURA, Y; IMAI, M et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2059-2066, issn 0013-4651Article