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A Charge Parity AmmeterLAMBERT, Nicholas J; EDWARDS, Megan; CICCARELLI, Chiara et al.Nano letters (Print). 2014, Vol 14, Num 3, pp 1148-1152, issn 1530-6984, 5 p.Article

Spontaneous formation of pi-soliton in a superconducting wire with an odd number of electronsKWON, H.-J; YAKOVENKO, V. M.Journal de physique. IV. 2002, Vol 100, issn 1155-4339, p. Pr9.113Conference Paper

Low-energy spectrum of one-dimensional generalized Wigner latticeSLAVIN, V.Physica status solidi. B. Basic research. 2005, Vol 242, Num 10, pp 2033-2040, issn 0370-1972, 8 p.Article

Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopyYULEI SHI; ZHOU, Qing-Li; CUNLIN ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7385, issn 0277-786X, isbn 978-0-8194-7666-1 0-8194-7666-8, 73850B.1-73850B.6Conference Paper

Band structure and dielectric function of TlInTe2WAKITA, K; SHIM, Y; ORUDZHEV, G et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 11, pp 2841-2844, issn 1862-6300, 4 p.Conference Paper

Muon spin rotation study of magnetism in electron-doped chromium sulfideBROOKS, M. L; BLUNDELL, S. J; STEER, C. A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 012419.1-012419.4, issn 1098-0121Article

I-V curve shape factor for thin p-n junctions at high injection levelsPOPESCU, C; MANIFACIER, J. C; ARDEBILI, R et al.Physica status solidi. A. Applied research. 1996, Vol 158, Num 2, pp 611-621, issn 0031-8965Article

Gain nonlinearities in semiconductor lasers : the combined effect of the modulation of the carrier density and the electron temperature at the beat frequency of interacting optical fieldsPLYAVENEK, A. G.Optics communications. 1993, Vol 100, Num 1-4, pp 278-288, issn 0030-4018Article

Strong increase of the derivative of the carrier-induced index change of semiconductor lasers at low injected carrier densitySHIN, S; SU, C. B.IEEE photonics technology letters. 1993, Vol 5, Num 9, pp 981-983, issn 1041-1135Article

COUPURE DE LA STRUCTURE P-N-P-N PAR LE COURANT DE COMMANDE DE LA BASE P DANS LE CAS DU FORT NIVEAU D'INJECTION DE LA BASE NLINIJCHUK IA; PALAMARCHUK AI.1973; RADIOTEKH. ELEKTRON.; S.S.S.R.; DA. 1973; VOL. 18; NO 4; PP. 829-834; BIBL. 6 REF.Serial Issue

Electromechanical Sensing of Substrate Charge Hidden under Atomic 2D CrystalsKAY, Nicholas D; ROBINSON, Benjamin J; FAL'KO, Vladimir I et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3400-3404, issn 1530-6984, 5 p.Article

Terahertz absorption by resonant plasmon excitations in grating-gated quantum wellsBARRICK, T. A; WANKE, M. C; FORTIER, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7215, issn 0277-786X, isbn 978-0-8194-7461-2 0-8194-7461-4, 1Vol, 721509.1-721509.7Conference Paper

The effects of trigger light pulses on the response speed of semi-insulating GaAs photoconductive switchesDAI, Hui-Ying; LI, Hong-Bo; XU, Jie et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7279, issn 0277-786X, isbn 978-0-8194-7538-1, 727916.1-727916.9Conference Paper

Zitterbewegung, chirality, and minimal conductivity in grapheneKATSNELSON, M. I.The European physical journal. B, Condensed matter physics. 2006, Vol 51, Num 2, pp 157-160, issn 1434-6028, 4 p.Article

Polarization dependent size of Ge nanoparticle formed by ultrafast laserMIN AH SEO; DAI SIK KIM; HYUN SUN KIM et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61290F.1-61290F.8, issn 0277-786X, isbn 0-8194-6171-7, 1VolConference Paper

Orbital ordering and valence states in (La1+xCa1-x)CoRuO6 double perovskitesBOS, Jan-Willem G; ATTFIELD, J. Paul; CHAN, Ting-Shan et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014101.1-014101.5, issn 1098-0121Article

Magnetostriction and magnetotransport in bismuthMICHENAUD, J.-P; LENOIR, B; BELLOUARD, C et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 18, pp 184418.1-184418.4, issn 1098-0121Article

Whether is it possible to produce high concentrations of carriers in a semiconductor for observing the Bose condensate at room temperature?ORAEVSKY, A. N.Quantum electronics (Woodbury). 2003, Vol 33, Num 5, pp 377-379, issn 1063-7818, 3 p.Article

Charge carrier concentration and mobility of ions in a silica glassTOMOZAWA, M; SHIN, D.-W.Journal of non-crystalline solids. 1998, Vol 241, Num 2-3, pp 140-148, issn 0022-3093Article

Activation of shallow dopants in II-VI compoundsWALUKIEWICZ, W.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 244-247, issn 0022-0248Conference Paper

Thermoelectric power for carriers in localized states : a generalization of Heikes and Chaikin-Beni formulaeDOUMERC, J.-P.Journal of solid state chemistry (Print). 1994, Vol 109, Num 2, pp 419-420, issn 0022-4596Article

Improved scaling rules for bandgaps in graphene nanomeshsGUIPING TANG; ZHENHUA ZHANG; XIAOQING DENG et al.Carbon (New York, NY). 2014, Vol 76, pp 348-356, issn 0008-6223, 9 p.Article

Formation of Carbonic Cluster Ions at the Ionization of Fullerenes and Multiatomic Molecules of HydrocarbonsAFROSIMOV, V. V; BASALAEV, A. A; PANOV, M. N et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2010, Vol 18, Num 1-6, pp 441-445, issn 1536-383X, 5 p.Conference Paper

The theoretical research of the carriers distribution in the semiconductor quantum dotZHAO, C; ZHAO, M; WANG, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7844, issn 0277-786X, isbn 978-0-8194-8374-4, 78441G.1-78441G.5Conference Paper

Inadaptation des diagrammes d'Arrhenius, comme méthode de détermination graphique des états localisés = Inadequacy of Arrhenius plots as a graphical method for determination of localized statesONGARO, R; PILLONNET, A; MOHAMMED GAROUM et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 1, pp 129-137, issn 0022-3727Article

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