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Results 1 to 25 of 640

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Underfill for low-K silicon technologyRAJAGOPALAN, Sarathy; DESAI, Kishor; TODD, Michael et al.IEEE/CPMT/SEMI international electronics manufacturing technology. Symposium. 2004, pp 1-3, isbn 0-7803-8582-9, 1Vol, 3 p.Conference Paper

Effect of bridging groups of precursors on modulus improvement in plasma co-polymerized low-k filmsKUNIMI, Nobutaka; KAWAHARA, Jun; NAKANO, Akinori et al.IEEE international interconnect technology conference. 2004, pp 139-141, isbn 0-7803-8308-7, 1Vol, 3 p.Conference Paper

Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration schemeNITTA, S; PURUSHOTHAMAN, S; LINIGER, E et al.International Electron Devices Meeting. 2004, pp 321-324, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Evaluation of the diffusion barrier continuity on porous low-k films using positronium time of flight spectroscopyTANAKA, H. K. M; KURIHARA, T; MILLS, A. P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193408.1-193408.4, issn 1098-0121Article

The effect of metallic barriers in inhibiting copper ion transport in low-k dielectrics: Implications for time-to-failureACHANTA, Ravi S; PLAWSKY, Joel L; GILL, William N et al.Thin solid films. 2009, Vol 517, Num 19, pp 5630-5633, issn 0040-6090, 4 p.Article

Stiffening and hydrophilisation of SOG low-k material studied by ellipsometric porosimetry, UV ellipsometry and laser-induced surface acoustic wavesURBANOWICZ, A. M; MESHMAN, B; SCHNEIDER, D et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 829-832, issn 1862-6300, 4 p.Conference Paper

Maximizing test pattern coverage for OPC model buildKHOH, Andrew; QUEK, Shyue-Fong; FOONG, Yee-Mei et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6197-0, vol 3, 615437.1-615437.10Conference Paper

Extended 0.13 μm CMOS technology for the ultra high-speed and MS/RF application segmentsCHANG, C. S; CHAO, C. P; WANG, C. H et al.Symposium on VLSI technology. 2002, pp 68-69, isbn 0-7803-7312-X, 2 p.Conference Paper

Thermal conductivity of BCC-ordered mesoporous silica filmsSHIN, Sangwoo; HA, Tae-Jung; PARK, Hyung-Ho et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 12, issn 0022-3727, 125404.1-125404.5Article

Numerical characterization of the stress induced voiding inside via of various Cu/Low k interconnectsYAO, C. H; HUANG, T. C; CHI, K. S et al.IEEE international interconnect technology conference. 2004, pp 24-26, isbn 0-7803-8308-7, 1Vol, 3 p.Conference Paper

Plasma technologies for low-k dry etchingTATSUMI, Tetsuya.Proceedings - Electrochemical Society. 2003, pp 206-216, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Organofluorosilicate glass : A dense low-k dielectric with superior materials propertiesCHENG, Y. L; WANG, Y. L; JUANG, Yungder et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 518-522, issn 0022-3697, 5 p.Conference Paper

Simulation based post OPC verification to enhance process window, critical failure analysis and yieldKANG, Jae-Hyun; CHOI, Jae-Young; YUN, Kyung-Hee et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6197-0, vol 3, 61543J.1-61543J.9Conference Paper

Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-K BEOLEDELSTEIN, D; RATHORE, H; CHEN, F et al.IEEE international reliability physics symposium. 2004, pp 316-319, isbn 0-7803-8315-X, 1Vol, 4 p.Conference Paper

Tailored Ultralow Dielectric Permittivity in High-Performance Fluorinated Polyimide Films by Adjusting Nanoporous CharacterisiticsZHA, Jun-Wei; JIA, Hong-Juan; WANG, Hai-Yan et al.Journal of physical chemistry. C. 2012, Vol 116, Num 44, pp 23676-23681, issn 1932-7447, 6 p.Article

Area Scaling for Backend Dielectric BreakdownMILOR, Linda; HONG, Changsoo.IEEE transactions on semiconductor manufacturing. 2010, Vol 23, Num 3, pp 429-441, issn 0894-6507, 13 p.Article

Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmasHYOUN WOO KIM; JONG WOO LEE; JOO, Junghoon et al.Microelectronic engineering. 2008, Vol 85, Num 2, pp 300-303, issn 0167-9317, 4 p.Article

Dielectric constant of barium titanate/cyanoethyl ester of polyvinyl alcohol composite in comparison with the existing theoretical modelsKOTA, Ravikiran; ALI, Ashraf F; LEE, Burtrand I et al.Microelectronic engineering. 2007, Vol 84, Num 12, pp 2853-2858, issn 0167-9317, 6 p.Article

Ferroelectric characteristic of group IV elements added SrBi2Ta2O9 thin filmsTAMURA, Susumu; OMURA, Yasuhisa.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 830-833, issn 0026-2714, 4 p.Conference Paper

Effect of silanol treatment of inorganic filler on dielectric properties of inorganic-organic compositesKOBUNE, Masafumi; TAKASAKI, Keiko; YAZAWA, Tetsuo et al.Ferroelectrics (Print). 2007, Vol 356, pp 72-77, issn 0015-0193, 6 p.Conference Paper

Organic ArF bottom anti-reflective coatings for immersion lithographyZHONG XIANG; HONG ZHUANG; HENGPENG WU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 651929.1-651929.10, issn 0277-786X, isbn 978-0-8194-6638-9Conference Paper

Effects of annealing on low dielectric constant carbon doped silicon oxide filmsRUSLI, E; WANG, M. R; WONG, T. K. S et al.Diamond and related materials. 2006, Vol 15, Num 1, pp 133-137, issn 0925-9635, 5 p.Article

Improvement of electrical properties of low dielectric constant nanoporous silica films prepared using sol-gel method with catalyst HFHE, Z. W; LIU, X. Q; SU, Q et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 82, Num 2, pp 349-355, issn 0947-8396, 7 p.Article

Electromigration failure distributions of dual damascene Cu / low - : k interconnectsOATES, A. S; LEE, S. C.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1581-1586, issn 0026-2714, 6 p.Conference Paper

Low cost microwave thick film structuresPITT, K; JAKUBOWSKA, M; FREE, C et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 5, pp 309-313, issn 0957-4522, 5 p.Article

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