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Electrical characteristics of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)2S-treated GaAsYEN, Chih-Feng; LEE, Ming-Kwei; LEE, Jung-Chan et al.Solid-state electronics. 2014, Vol 92, pp 1-4, issn 0038-1101, 4 p.Article

Universal relations for coupling of optical power between microresonators and dielectric waveguidesYARIV, A.Electronics letters. 2014, Vol 50, Num 1, pp 13-14, issn 0013-5194, 2 p.Article

Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing TemperaturesYUEH CHIN LIN; HAI DANG TRINH; EDWARD YI CHANG et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1229-1231, issn 0741-3106, 3 p.Article

Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO AlloysJIN JU KIM; MINWOO KIM; UKJIN JUNG et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 11, pp 3683-3689, issn 0018-9383, 7 p.Article

MIM Capacitors Based on ZrTiOx/BaZryTi1―yO3 Featuring Record-Low VCC and Excellent ReliabilityLIN, Chia-Chun; WU, Yung-Hsien; JIANG, Ren-Siang et al.IEEE electron device letters. 2013, Vol 34, Num 11, pp 1418-1420, issn 0741-3106, 3 p.Article

Validation for Capacitance National Standard Based on Long-term Monitoring Results of Standard CapacitorsDOMAE, Atsushi; SAKAMOTO, Norihiko; KANEKO, Nobu-Hisa et al.IEEJ transactions on electrical and electronic engineering. 2013, Vol 8, Num 2, pp 111-115, issn 1931-4973, 5 p.Article

Electrical performance of polymer ferroelectric capacitors fabricated on plastic substrate using transparent electrodesBHANSALI, Unnat S; KHAN, M. A; ALSHAREEF, H. N et al.Organic electronics (Print). 2012, Vol 13, Num 9, pp 1541-1545, issn 1566-1199, 5 p.Article

Calendar and cycling ageing of activated carbon supercapacitor for automotive applicationGUALOUS, H; GALLAY, R; AL SAKKA, M et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2477-2481, issn 0026-2714, 5 p.Conference Paper

Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO3 composite dielectric used in embedded capacitorsALAM, Mohammed A; AZARIAN, Michael H; OSTERMAN, Michael et al.Microelectronics and reliability. 2011, Vol 51, Num 5, pp 946-952, issn 0026-2714, 7 p.Article

Radiation-Hardened Electronics and Ferroelectric Memory for Space Flight SystemsSAYYAH, Rana; MACLEOD, Todd C; HO, Fat D et al.Ferroelectrics (Print). 2011, Vol 413, pp 170-175, issn 0015-0193, 6 p.Article

Grain boundary-driven leakage path formation in HfO2 dielectricsBERSUKER, G; YUM, J; KITSCH, P et al.Solid-state electronics. 2011, Vol 65-66, pp 146-150, issn 0038-1101, 5 p.Conference Paper

Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitorsOI YING WONG; WING SHAN TAM; JUN LIU et al.Microelectronics and reliability. 2010, Vol 50, Num 5, pp 627-630, issn 0026-2714, 4 p.Article

Two-dimensional interdigital capacitive small antenna resonating at enhanced left-handed modesLIM, S; PARK, W.-Y; KWAK, S. I et al.IET microwaves, antennas & propagation (Print). 2010, Vol 4, Num 10, pp 1475-1480, issn 1751-8725, 6 p.Article

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statisticsMIRANDA, E; O'CONNOR, E; HURLEY, P. K et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1294-1297, issn 0026-2714, 4 p.Conference Paper

Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High-k DielectricsCHEN, Chih-Hao; CHUANG, Kai-Chieh; HWU, Jenn-Gwo et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1262-1268, issn 0018-9383, 7 p.Article

Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 filmsWEINREICH, W; REICHE, R; SCHRODER, U et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1826-1829, issn 0167-9317, 4 p.Conference Paper

RF model of 3-RC network structure for metal-insulator-metal capacitorKANG, I. M; CHOI, T.-H; JOE, J. H et al.Electronics Letters. 2008, Vol 44, Num 19, pp 1140-1141, issn 0013-5194, 2 p.Article

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn 6-doped GaAs structuresSRNANEK, R; IRMER, G; DONOVAL, D et al.Microelectronics journal. 2008, Vol 39, Num 12, pp 1439-1443, issn 0959-8324, 5 p.Article

Lead Sodium Niobate Glass-Ceramic Dielectrics and Internal Electrode Structure for High Energy Storage Density CapacitorsJUN LUO; JUN DU; QUN TANG et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 12, pp 3549-3554, issn 0018-9383, 6 p.Article

Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing testsEL BROUJI, H; BRIAT, O; VINASSA, J.-M et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1473-1478, issn 0026-2714, 6 p.Conference Paper

Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical methodWHITMAN, Charles S.Microelectronics and reliability. 2008, Vol 48, Num 7, pp 965-973, issn 0026-2714, 9 p.Conference Paper

Reliability study of TaON capacitors : From leakage current characterization to ESD robustness predictionVERCHIANI, M; BOUYSSOU, E; FIANNACA, G et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1412-1416, issn 0026-2714, 5 p.Conference Paper

Effect of frequency and current density on A.C. etching of aluminum electrolytic capacitor foilYUEH LIEN LEE; BIN LUNG OU; YI HUNG CHIU et al.Journal of materials science. Materials in electronics. 2007, Vol 18, Num 6, pp 627-634, issn 0957-4522, 8 p.Article

Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxideZHAO, C; WITTERS, T; BREIMER, P et al.Microelectronic engineering. 2007, Vol 84, Num 1, pp 7-10, issn 0167-9317, 4 p.Article

Small-signal impedance of a radio frequency plasma capacitorLINARDAKIS, Peter; BORG, Gerard G.IEEE microwave and wireless components letters. 2007, Vol 17, Num 11, pp 763-765, issn 1531-1309, 3 p.Article

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