Thin film transistor technologies IV (Boston MA, 2-4 November 1998)Kuo, Yue.Proceedings - Electrochemical Society. 1998, issn 0161-6374, isbn 1-56677-216-8, XI, 428 p, isbn 1-56677-216-8Conference Proceedings

Large-area amorphous silicon TFT-based X-ray image sensors for medical imaging and non destructive testingWEISFIELD, R. L.Proceedings - Electrochemical Society. 1998, pp 369-380, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Properties of CAT-CVD silicon films used in TFTMATSUMURA, H.Proceedings - Electrochemical Society. 1998, pp 280-287, issn 0161-6374, isbn 1-56677-216-8Conference Paper

The effect of geometric overlapping capacitance on leakage of a-Si:H thin film transistorsPEREIRA, D; NATHAN, A.Proceedings - Electrochemical Society. 1998, pp 256-264, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Effects of growth parameters on the performance of μc-Si thin film transistors deposited using SiF₄YU CHEN; WAGNER, S.Proceedings - Electrochemical Society. 1998, pp 221-229, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Crystal grain nucleation in a-Si : A way to engineer the poly-Si morphologySPINELLA, C; LOMBARDO, S.Proceedings - Electrochemical Society. 1998, pp 100-115, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Passive and active matrix liquid crystal displays with plastic substratesLUEDER, E.Proceedings - Electrochemical Society. 1998, pp 336-354, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Thin gate dielectric TFTs using damascene-gate structuresMA, E; WAGNER, S.Proceedings - Electrochemical Society. 1998, pp 149-162, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Fully-vs non-overlapping pixel configurations for direct X-ray detection : Process and performance considerationsPARK, B; NATHAN, A.Proceedings - Electrochemical Society. 1998, pp 381-391, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Evolution of the signature of nitrogen related defects in the X-ray absorption spectra of N-rich SiN_x:H filmsPALOURA, E. C; KANICKI, J.Proceedings - Electrochemical Society. 1998, pp 316-326, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Amorphous silicon transistors on ultrathin steel foil substratesMA, E. Y; WAGNER, S.Proceedings - Electrochemical Society. 1998, pp 360-368, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Hydrogenation of amorphous silicon thin film transistorsYUE KUO.Proceedings - Electrochemical Society. 1998, pp 191-197, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Numerical extraction of capacitance in a-Si thin-film transistorsPHAM, H. H; NATHAN, A.Proceedings - Electrochemical Society. 1998, pp 273-279, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Poly-Si TFT fabrication and hydrogenation using a process compatible with plastic substratesGOSAIN, D. P; USUI, S.Proceedings - Electrochemical Society. 1998, pp 174-184, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Room temperature sputter deposition of polycrystalline ITO for photodetectorsQINGHUA MA; NATHAN, A.Proceedings - Electrochemical Society. 1998, pp 408-420, issn 0161-6374, isbn 1-56677-216-8Conference Paper

High-quality low-temperature gate oxide for poly-Si TFTsOKUMURA, F; YUDA, K.Proceedings - Electrochemical Society. 1998, pp 133-142, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Ion assisted crystal grain nucleation in a-Si : A low temperature route towards poly-Si formationSPINELLA, C; LOMBARDO, S.Proceedings - Electrochemical Society. 1998, pp 116-132, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Raised source and drain structure of poly-Si TFTsSHUSHENG IIE; MAA, J.-S.Proceedings - Electrochemical Society. 1998, pp 204-220, issn 0161-6374, isbn 1-56677-216-8Conference Paper

Assessment of 3D for future on-chip wiring and novel system solutionsENGELHARDT, M.Proceedings - Electrochemical Society. 2004, pp 250-260, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

SOI CMOS circuits for System-on-Chip (SoC) applicationKIM, Jonghae; PLOUCHART, Jean-Olivier; GROSS, B. Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 292-311, issn 0161-6374, isbn 1-56677-417-9, 20 p.Conference Paper

Dielectrics for nanosystems : materials science, processing, reliability, and manufacturing (Honolulu HI, 3-8 October 2004)Singh, R; Iwai, H; Tummala, R.R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-417-9, X, 490 p, isbn 1-56677-417-9Conference Proceedings

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Three-dimensional interconnect technology using polyimide film and gold for MMICsSUGITANI, Suehiro.Proceedings - Electrochemical Society. 2004, pp 128-134, issn 0161-6374, isbn 1-56677-417-9, 7 p.Conference Paper

Advanced process modules for scaled ULSIsMOGAMI, Tohru.Proceedings - Electrochemical Society. 2004, pp 32-41, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Gate dielectric impact for the 65nm digital and mixed signal platform applicationsTAVEL, Brice.Proceedings - Electrochemical Society. 2004, pp 47-59, issn 0161-6374, isbn 1-56677-417-9, 13 p.Conference Paper