Dielectrics in emerging technologies (Paris, 27 April - 2 May 2003)Misra, D; Wörhoff, K; Mascher, P et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-346-6, IX, 436 p, isbn 1-56677-346-6Conference Proceedings

Progress in the fabrication of complex optical coatingsPOITRAS, Daniel.Proceedings - Electrochemical Society. 2003, pp 172-185, issn 0161-6374, isbn 1-56677-346-6, 14 p.Conference Paper

Silicon nitΡide coatings for Si solar cells: Control of optical reflection and surface/bulk passivationSOPORI, Bhushan.Proceedings - Electrochemical Society. 2003, pp 186-200, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Optical and electronic properties of nanostructured siliconLOCKWOOD, N. T.Proceedings - Electrochemical Society. 2003, pp 89-104, issn 0161-6374, isbn 1-56677-346-6, 16 p.Conference Paper

Thin film materials, processes, and reliability (plasma processing for the 100nm node and copper interconnects with low-k inter-level dielectric films)Mathad, G.S; Case, T.S; Leverd, F et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-393-8, X, 424 p, isbn 1-56677-393-8Conference Proceedings

Silicon-based field-effect structures: From dielectrics to bioelectronicsSCHÖNING, M. J.Proceedings - Electrochemical Society. 2003, pp 31-37, issn 0161-6374, isbn 1-56677-346-6, 7 p.Conference Paper

Controlled filling of silicon trenches with doped oxide for MEMSAGARWAL, Ajay; NAGARAJAN, Ranganathan.Proceedings - Electrochemical Society. 2003, pp 75-85, issn 0161-6374, isbn 1-56677-346-6, 11 p.Conference Paper

Influence of the 5 Å TaN_x interface layer on doped metal oxide high K dielectric characterizationJIANG LU; YUE KUO.Proceedings - Electrochemical Society. 2003, pp 374-380, issn 0161-6374, isbn 1-56677-346-6, 7 p.Conference Paper

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Modeling and electrical characterization of MOS structures with ultra thin gate oxideCLERC, R; GHIBAUDO, G.Proceedings - Electrochemical Society. 2003, pp 551-572, issn 0161-6374, isbn 1-56677-347-4, 22 p.Conference Paper

Neurotransistors for biomedical nanotechnologyMENEZES, A. J; KAPOOR, V. J.Proceedings - Electrochemical Society. 2003, pp 38-47, issn 0161-6374, isbn 1-56677-346-6, 10 p.Conference Paper

Si-SiO₂ interface trap properties and depedence with oxide thickness and with electrical stress in mosfets with oxides in the 1-2 nanometer rangeBAUZA, D; RAHMOUNE, F.Proceedings - Electrochemical Society. 2003, pp 22-38, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Characterization of thermally evaporated ZrO₂BHASKARAN, M; SWAIN, P. K; MISRA, D et al.Proceedings - Electrochemical Society. 2003, pp 393-398, issn 0161-6374, isbn 1-56677-346-6, 6 p.Conference Paper

Conduction modeling of thick double-layer nitride/oxide dielectricsEVSEEV, S.Proceedings - Electrochemical Society. 2003, pp 573-588, issn 0161-6374, isbn 1-56677-347-4, 16 p.Conference Paper

New trends in silicon thin films and applicationsKLEIDER, J. P; ROCA I CABARROCAS, P; GUEDJ, C et al.Proceedings - Electrochemical Society. 2003, pp 265-279, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Properties of ultrathin high-κ dielectrics on SI probed by electron spin resonance-active defects: Interfaces and interlayersSTESMANS; AFANAS'EV, V. V.Proceedings - Electrochemical Society. 2003, pp 66-78, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

Structural and electronic properties of nanocrystalline silicon - silicon dioxide superlatticesTSYBESKOV, Leonid; KAMENEV, B. V; LOCKWOOD, David J et al.Proceedings - Electrochemical Society. 2003, pp 243-254, issn 0161-6374, isbn 1-56677-346-6, 12 p.Conference Paper

Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)Sah, R.E; Deen, M.J; Landheer, D et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-347-4, XII, 636 p, isbn 1-56677-347-4Conference Proceedings

Material consideration for integrated optics in silica-on-silicon technologyWOSINSKI, Lech; DAINESE, Matteo; FERNANDO, Harendra et al.Proceedings - Electrochemical Society. 2003, pp 130-144, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Gas-phase and surface reactions in plasma enhanced chemical etching of high-K dielectricsLIN SHA; CHANG, Jane P.Proceedings - Electrochemical Society. 2003, pp 342-349, issn 0161-6374, isbn 1-56677-346-6, 8 p.Conference Paper

Material aspects in emerging nonvolatile memoriesMIKOLAJICK, Thomas; PINNOW, Cay-Uwe.Proceedings - Electrochemical Society. 2003, pp 290-304, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Characterization of low-k to extreme low-k SiCOH dielectricsGRILL, Alfred; NEUMAYER, Deborah A.Proceedings - Electrochemical Society. 2003, pp 315-322, issn 0161-6374, isbn 1-56677-346-6, 8 p.Conference Paper

Recovery and reversibility of electrical instabilities in double-layer dielectric filmsEVSEEV, S; CACCIATO, A.Proceedings - Electrochemical Society. 2003, pp 605-613, issn 0161-6374, isbn 1-56677-347-4, 9 p.Conference Paper

Optical characterisation of LPCVD SiO_xN_y thin filmsMODREANU, M; GARTNER, M; TOMOZEIU, N et al.Proceedings - Electrochemical Society. 2003, pp 118-129, issn 0161-6374, isbn 1-56677-346-6, 12 p.Conference Paper

Ferroelectric properties of Pb-excess PZT thin films prepared by zirconium oxyacetate-based sol-gel processNAKANO, K; SAKAI, G; SHIMANOE, K et al.Proceedings - Electrochemical Society. 2003, pp 230-240, issn 0161-6374, isbn 1-56677-346-6, 11 p.Conference Paper