Advanced short-time thermal processing for Si-based CMOS devices II (San Antonio TX, 10-12 May 2004)Öztürk, M.C; Chen, L.J; Timans, P.J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-406-3, XII, 428 p, isbn 1-56677-406-3Conference Proceedings

Enhancement of manufacturibility in polycrystalline silicon process by using disilane precursor at 65nm CMOS technologyYUANNING CHEN; HAOWEN BU; CUNNINGHAM, Kevin L et al.Proceedings - Electrochemical Society. 2004, pp 244-251, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Gate-source/drain extension overlap control with angled implants: TCAD modeling studyTHIRUPAPULIYUR, Sunderraj; AL-BAYATI, Amir; JAIN, Amitabh et al.Proceedings - Electrochemical Society. 2004, pp 127-134, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Formation and characterization of nickel silicided shallow N⁺P junctions using implantation through silicide and low temperature furnace annealingWANG, Chao-Chun; CHEN, Mao-Chieh.Proceedings - Electrochemical Society. 2004, pp 183-190, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

The effect of ramp rate: Short process time and partial reactions on cobalt and nickel silicide formationPAGES, X; VAN DER JEUGD, K; KUZNETSOV, V et al.Proceedings - Electrochemical Society. 2004, pp 174-182, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO₂/Pt and HfO₂/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Atomic layer deposition of dielectrics and electrodes for embedded-dram capacitor cells in 90 nm technology and beyondGERRITSEN, E; JOURDAN, N; PIAZZA, M et al.Proceedings - Electrochemical Society. 2004, pp 328-340, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Characterization of silicon nitride films for the thin film transistor gate dielectricSAAD ABBASI, M; HOSSAIN, Maruf; ABU-SAFE, Husam et al.Proceedings - Electrochemical Society. 2004, pp 222-229, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Effects of impurities in hafnium dioxideXIA, B; STESMANS, A; CHEN, F et al.Proceedings - Electrochemical Society. 2004, pp 304-312, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Structure and dynamics of SI interstitials at SI(001) and SI(001)/SIO₂KIRICHENKO, Taras A; YU, Decai; BANERJEE, Sanjay K et al.Proceedings - Electrochemical Society. 2004, pp 112-119, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

A novel atomic layer deposition process to deposit hafnium silicate thin filmsSENZAKI, Yoshihide; PARK, Seung; BARTHOLOMEW, Lawrence et al.Proceedings - Electrochemical Society. 2004, pp 264-270, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Interaction between interstitials and arsenic-vacancy complexes in crystalline siliconHARRISON, Scott A; EDGAR, Thomas F; HWANG, Gyeong S et al.Proceedings - Electrochemical Society. 2004, pp 120-126, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Fundamental issues in millisecond annealingACHARYA, N; TIMANS, P. J.Proceedings - Electrochemical Society. 2004, pp 11-18, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

CMOS optoelectronicsLIU, C. W; HSU, B.-C.Proceedings - Electrochemical Society. 2004, pp 383-395, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Influence of surface chemistry on ultrashallow junction formationDEV, Kapil; SEEBAUER, E. G.Proceedings - Electrochemical Society. 2004, pp 66-70, issn 0161-6374, isbn 1-56677-406-3, 5 p.Conference Paper

Defect behavior and control in advanced CMOs process technologiesCLAEYS, C; SIMOEN, E.Proceedings - Electrochemical Society. 2004, pp 50-65, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Electrical characterization of HfO_xN_y gate dielectric with different nitrogen concentration profiles formed by rapid thermal annealingCHENG, Chin-Lung; CHANG-LIAO, Kuei-Shu; WANG, Tien-Ko et al.Proceedings - Electrochemical Society. 2004, pp 286-291, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Source-drain series resistance: The real limiter to MOSFET scalingTHOMPSON, Scott E.Proceedings - Electrochemical Society. 2004, pp 412-419, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Ultra-shallow junction implant anneal using xenon arc flash lampsWOO SIK YOO; KANG, Kitaek.Proceedings - Electrochemical Society. 2004, pp 3-10, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Further optimization of plasma nitridation of ultra-thin oxides for 65nm node MOSFETsKRAUS, P. A; CHUA, T. C; NOURI, F et al.Proceedings - Electrochemical Society. 2004, pp 236-243, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Integration of low and high temperature junction anneals for 45 NM CMOsLINDSAY, R; PAWLAK, B. J; MAEX, K et al.Proceedings - Electrochemical Society. 2004, pp 145-156, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Reduced poly-SI gate depletion effect by pulsed excimer laser annealingHIU YUNG WONG; TAKEUCHI, Hideki; KING, Tsu-Jae et al.Proceedings - Electrochemical Society. 2004, pp 205-215, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Silicon precursors for gate dielectric and electrode applicationsHOOVER, Cynthia A; MEIERE, Scott H; LITWIN, Michael M et al.Proceedings - Electrochemical Society. 2004, pp 354-360, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Ultra-thin silicon oxynitride gate-dielectric made by ECR plasmasMANERA, G. A; DINIZ, J. A; DOI, I et al.Proceedings - Electrochemical Society. 2004, pp 216-221, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Application of ultra-rapid thermal annealing for electrical activation for next generation MOSFETsSUGURO, Kyoichi; ITO, Takayuki; NISHINOHARA, Kazumi et al.Proceedings - Electrochemical Society. 2004, pp 39-49, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper