Dielectrics for nanosystems : materials science, processing, reliability, and manufacturing (Honolulu HI, 3-8 October 2004)Singh, R; Iwai, H; Tummala, R.R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-417-9, X, 490 p, isbn 1-56677-417-9Conference Proceedings

SOI CMOS circuits for System-on-Chip (SoC) applicationKIM, Jonghae; PLOUCHART, Jean-Olivier; GROSS, B. Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 292-311, issn 0161-6374, isbn 1-56677-417-9, 20 p.Conference Paper

SOI and low-K in high-volume manufacturingGREENLAW, D; BURBACH, G; HUEBLER, P et al.Proceedings - Electrochemical Society. 2004, pp 42-46, issn 0161-6374, isbn 1-56677-417-9, 5 p.Conference Paper

Extending the reliability of SiO₂-Based dielectric to the nanometer limitWU, Emest Y; SUNE, Jordi.Proceedings - Electrochemical Society. 2004, pp 213-223, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Recent progress in FET-type ferroelectric memoriesISHIWARA, Hiroshi.Proceedings - Electrochemical Society. 2004, pp 195-205, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Reliability challenges for sub-90nm technology dielectricsPUCHNER, H.Proceedings - Electrochemical Society. 2004, pp 239-249, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Supression of surface micro-roughness on Si(110)NII, K; AKAHORI, H; YAMAMOTO, M et al.Proceedings - Electrochemical Society. 2004, pp 392-403, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Technology and applications of three-dimensional integrationREIF, Rafael; CHUAN SENG TAN; FAN, Andy et al.Proceedings - Electrochemical Society. 2004, pp 261-276, issn 0161-6374, isbn 1-56677-417-9, 16 p.Conference Paper

Nanoscale packaging and nano-bio electronic systemsTUMMALA, Rao; MARKONDEYA RAJ, P; WANG, Zhong L et al.Proceedings - Electrochemical Society. 2004, pp 1-15, issn 0161-6374, isbn 1-56677-417-9, 15 p.Conference Paper

Dielectrics in SI nano-devices: Roles and challengesQI XIANG; KRIVOKAPIC, Zoran; MASZARA, Witek et al.Proceedings - Electrochemical Society. 2004, pp 86-96, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Advanced process modules for scaled ULSIsMOGAMI, Tohru.Proceedings - Electrochemical Society. 2004, pp 32-41, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Assessment of 3D for future on-chip wiring and novel system solutionsENGELHARDT, M.Proceedings - Electrochemical Society. 2004, pp 250-260, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

High-density 3-D microsystem-in-package technology and its application for integrated CCD micro-camera visual inspection systemYAMADA, Hiroshi; TOGASAKI, Takashi; SADAMOTO, Atsushi et al.Proceedings - Electrochemical Society. 2004, pp 277-291, issn 0161-6374, isbn 1-56677-417-9, 15 p.Conference Paper

HfSiON gate dielectrics for low-stand-by power CMOS devicesSEKINE, Katsuyuki; INUMIYA, Seiji; KANEKO, Akio et al.Proceedings - Electrochemical Society. 2004, pp 324-330, issn 0161-6374, isbn 1-56677-417-9, 7 p.Conference Paper

Manufacturing solutions for developing processes and tools for CVD/ALD of dielectrics for nanoelectronicsSINGH, R; DAMJANOVIC, D; BOLLA, H et al.Proceedings - Electrochemical Society. 2004, pp 356-361, issn 0161-6374, isbn 1-56677-417-9, 6 p.Conference Paper

Effects of nitrogen in HFO₂ gate dielectric on the electrical and reliability characteristics by N₂ plasmaKIM, Jeon-Ho; CHOI, Kyu-Jeong; YOON, Soon-Gil et al.Proceedings - Electrochemical Society. 2004, pp 464-469, issn 0161-6374, isbn 1-56677-417-9, 6 p.Conference Paper

Electrical conduction processes in Lanthana thin films prepared by E-beam evaporationKIM, Yongshik; OHMI, Shun-Ichiro; TSUTSUI, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 452-463, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate filmsJIN HYUNG JUN; DOO JIN CHOI.Proceedings - Electrochemical Society. 2004, pp 470-476, issn 0161-6374, isbn 1-56677-417-9, 7 p.Conference Paper

Domain matching epitaxy: A new paradigm for epitaxial growth of oxidesNARAYAN, J.Proceedings - Electrochemical Society. 2004, pp 103-114, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Dielectric scaling challenges and approaches in floating gate non-volatile memoriesKEENEY, Stephen N.Proceedings - Electrochemical Society. 2004, pp 151-158, issn 0161-6374, isbn 1-56677-417-9, 8 p.Conference Paper

Hot carrier stress and breakdown impact on high-frequency MOSFET analog performancePANTISANO, Luigi; SCHREURS, D; KACZER, B et al.Proceedings - Electrochemical Society. 2004, pp 224-238, issn 0161-6374, isbn 1-56677-417-9, 15 p.Conference Paper

Time dependent dielectric breakdown of thermally evaporated HfO₂ for nanoscale devicesCHOWDHURY, N. A; GARG, R; MISRA, D et al.Proceedings - Electrochemical Society. 2004, pp 381-391, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Dielectric adhesive wafer bonding for back-end wafer-level 3D hyper-integrationLU, J.-O; CALE, T. S; GUTMANN, R. J et al.Proceedings - Electrochemical Society. 2004, pp 312-323, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Ald HfSiO high-k dielectric and CVD-TaN metal gateCHUNG, U. I; PARK, S. G; CHO, H.-J et al.Proceedings - Electrochemical Society. 2004, pp 362-368, issn 0161-6374, isbn 1-56677-417-9, 7 p.Conference Paper