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Results 1 to 25 of 1793

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Inexpensive spot-profile analysis reflection high energy electron diffractionIDZERDA, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 6, pp 3138-3140, issn 0734-2101Article

Calculation of RHEED intensities from stepped surfacesKAWAMURA, T; MAKSYM, P. A; IIJIMA, T et al.Surface science. 1984, Vol 148, Num 2-3, pp L671-L676, issn 0039-6028Article

Kinematical analysis of RHEED intensities from the Si(111)7×7 structureHORIO, Y; ICHIMIYA, A.Surface science. 1989, Vol 219, Num 1-2, pp 128-142, issn 0039-6028, 15 p.Article

Mean inner potentials of aluminium and copper = Potentiels internes moyens de l'aluminium et du cuivreOCHANDO, M. A; SANCHEZ, A; SERNA, C. R et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 13, pp L401-L403, issn 0022-3719Article

Theory of RHEED and application to surface structure studiesICHIMIYA, A; KOHMOTO, S; NAKAHARA, H et al.Ultramicroscopy. 1993, Vol 48, Num 4, pp 425-432, issn 0304-3991Article

On the RHEED specular beam and its intensity oscillation during MBE growth of GaAsZHANG, J; NEAVE, J. H; JOYCE, B. A et al.Surface science. 1990, Vol 231, Num 3, pp 379-388, issn 0039-6028, 10 p.Article

Intensity enhancement and plasmon inelastic scattering in rheedWANG, Z. L.Surface science. 1989, Vol 214, Num 1-2, pp 44-56, issn 0039-6028, 13 p.Article

Picosecond reflection high-energy electron diffractionELSAYED-ALI, H. E; MOUROU, G. A.Applied physics letters. 1988, Vol 52, Num 2, pp 103-104, issn 0003-6951Article

Current flow in reflection electron microscopy and RHEEDMARKS, L. D; MA, Y.Acta crystallographica. Section A, Foundations of crystallography. 1988, Vol 44, Num 3, pp 392-393, issn 0108-7673Article

Analysis of intensity data for RHEED by the MgO(001) surfaceMAKSYM, P. A.Surface science. 1985, Vol 149, Num 1, pp 157-174, issn 0039-6028Article

Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesJOYCE, B. A; NEAVE, J. H; DOBSON, P. J et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 2, pp 814-819, issn 0163-1829Article

Tin dioxide with the CaF2 structure in thin tin oxide filmsPENEVA, S. K; RUDARSKA, R. K; NIHTIANOVA, D. D et al.Thin solid films. 1984, Vol 112, Num 3, pp 247-255, issn 0040-6090Article

RHEED intensity analysis of Si(111) 7×7 and v3×v3-Ag surfaces. I: Kinematic diffraction approachHORIO, Y; ICHIMIYA, A.Surface science. 1983, Vol 133, Num 2-3, pp 393-400, issn 0039-6028Article

Characteristic features in RHEED patterns of disordered surfaces: theoretical considerationsMEYER-EHMSEN, G; BOLGER, B; LARSEN, P. K et al.Surface science. 1989, Vol 224, Num 1-3, pp 591-612, issn 0039-6028Article

Si(111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high-energy electron diffractionHIRAYAMA, H; TATSUMI, T.Journal of applied physics. 1989, Vol 66, Num 2, pp 629-633, issn 0021-8979, 5 p.Article

The origin of circular arc in RHEED: 1D ordered surfaceKAWAMURA, T; HASEBE, M; DOBSON, P. J et al.Journal of the Physical Society of Japan. 1985, Vol 54, Num 10, pp 3675-3678, issn 0031-9015Article

Clean and damage-free GaAs surfaces prepared by ultrasonic running deionized water treatmentHIROTA, Y; HOMMA, Y; SUGII, K et al.Applied surface science. 1992, Vol 60-61, pp 619-624, issn 0169-4332Conference Paper

RHEED study on the Ge/Si (III) and Si/Ge (III) systems: reaction of Ge with the Si(III) (7×7) surfaceICHIKAWA, T; INO, S.Surface science. 1984, Vol 136, Num 2-3, pp 267-284, issn 0039-6028Article

ABSORPTION PROFILE AT SURFACES.ECHENIQUE PM; PENDRY JB.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 18; PP. 2936-2942; BIBL. 18 REF.Article

ANALYSIS OF A SURFACE CRYSTALLOGRAPHY OF A SOLID: LEED AND RHEED TECHNIQUES.THEETEN JB.1975; ACTA ELECTRON.; FR.; DA. 1975; VOL. 18; NO 1; PP. 39-45; ABS. FR. ALLEM.; BIBL. 20 REF.Article

PRACTICAL REFLECTION ELECTRON DIFFRACTIONRUSSELL GJ.1982; PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION; ISSN 0146-3535; GBR; DA. 1982; VOL. 5; NO 4; PP. 291-321; BIBL. 47 REF.Article

ETUDE DES DIAGRAMMES DE KIBUCHI OBTENUS PAR REFLEXION SUR DES CRISTAUX DE MGO, AL ET SI.MOSSER A; BOVIER C; BURGGRAF C et al.1975; BULL. SOC. FR. MINERAL. CRISTALLOGR.; FR.; DA. 1975; VOL. 98; NO 5; PP. 308-317; ABS. ANGL.; BIBL. 13 REF.Article

Silicon homoepitaxy using photochemical vapor deposition : a reflection high energy electron diffraction and transmittion electron microscopy studyLIAN, S; FOWLER, B; KRISHNAN, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 10, Num 3, pp 181-186Article

The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTeWU, Y. S; BECKER, C. R; WAAG, A et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 268-272, issn 0021-8979Article

A review of the geometrical fundamentals of reflection high-energy electron diffraction wirh application to silicon surfacesMAHAN, J. E; GEIB, K. M; ROBINSON, G. Y et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 5, pp 3692-3700, issn 0734-2101Article

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