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Results 1 to 25 of 362

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RECENT ADVANCES IN SURFACE STUDIES: ION BEAM ANALYSIS.MORGAN DV.1975; CONTEMPOR. PHYS.; G.B.; DA. 1975; VOL. 16; NO 3; PP. 221-241; BIBL. 15 REF.Article

THE MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING.WILLIAMS JS.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 2; PP. 85-86; BIBL. 6 REF.Article

Medium-energy ion spectroscopy using ion implanterRADZIMSKI, Z. J; YOKOYAMA, S; ISHIBASHI, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 7A, pp L962-L965, issn 0021-4922, 2Article

UTILISATION DE LA RETRODIFFUSION D'IONS DE MOYENNE ENERGIE POUR LA DETERMINATION DE COMPOSITIONS ET DE STRUCTURES CRISTALLINES DE SURFACE.COHEN C.1977; VIDE; FR.; DA. 1977; NO 189; PP. 135-138; ABS. ANGL.; BIBL. 7 REF.Article

RANGE PARAMETER DISTORTION IN HEAVY ION IMPLANTATION.BLANK P; WITTMAACK K.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 33-34; BIBL. 16 REF.Article

TRANSMISSION SPUTTERING AS A TECHNIQUE FOR MEASURING THE DISTRIBUTION OF ENERGY DEPOSITED IN SOLIDES BY ION BOMBARDMENT.BAY HL; ANDERSEN HH; HOFER WO et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 87-95; BIBL. 38 REF.Article

Discharge resolved impurity flux measurements in the edge plasma of ASDEX Upgrade by exposure of collector probesSCHUSTEREDER, W; KRIEGER, K; HERRMANN, A et al.Journal of nuclear materials. 2007, Vol 363-365, pp 242-246, issn 0022-3115, 5 p.Conference Paper

The screened Rutherford pencil beam problem with heterogeneitiesPOMRANING, G. C.Nuclear science and engineering. 2000, Vol 136, Num 1, pp 1-14, issn 0029-5639Article

Distributions of implanted Fe ions in quartz crystal and siliconKE-MING WANG; BO-RONG SHI; HAI-YAN GUO et al.Journal of applied physics. 1990, Vol 68, Num 7, pp 3191-3193, issn 0021-8979Article

Mécanismes de croissance et propriétés électroniques des films anodiques formés sur le titane sous irradiation alpha = Growth mechanisms and electronics properties of anodics films formed on titanium under alpha-radiationSAKOUT, Touria; OUDAR, J.1993, 149 p.Thesis

Rutherford scattering made simple by using complex numbersCHONG, F; ANDREWS, R. J.European journal of physics. 1993, Vol 14, Num 6, pp 245-247, issn 0143-0807Article

SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION IMPLANTATIONHEMMENT PLF.1979; VACUUM; ISSN 0042-207X; GBR; DA. 1979; VOL. 29; NO 11-12; PP. 439-442; BIBL. 12 REF.Article

RESONANT ABSORPTION OF THE GAMMA -RADIATION FROM THE 22NE(P,GAMMA )23NA REACTION AND THE EFFECT OF RUTHERFORD SCATTERING IN THE TARGET ON THE WIDTH OF THE ABSORPTION CURVESDU TOIT ZB; DE KOCK PR; HOUGH JH et al.1972; Z. PHYS.; DTSCH.; DA. 1972; VOL. 255; NO 2; PP. 97-102; BIBL. 6 REF.Serial Issue

RUTHERFORD BACKSCATTERING INVESTIGATION OF THERMALLY OXIDIZED TANTALUM ON SILICON.HIRVONEN J; REVESZ AG; KIRKENDALL TD et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 3; PP. 315-322; BIBL. 7 REF.Article

CHANNELING OF HIGH-ENERGY PROTONS IN SI AND W.ACERBI E; BIRATTARI C; CANDONI B et al.1975; NUOVO CIMENTO, B; ITAL.; DA. 1975; VOL. 29; NO 2; PP. 257-269; ABS. ITAL. RUSSE; BIBL. 33 REF.Article

DOES BACKSCATTERING OF 4HE IONS BY NUCLEI OBEY THE RUTHERFORD CROSS-SECTION FORMULA.ZIEGLER JF; BAGLIN JEE.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 4; PP. 1888-1890; BIBL. 10 REF.Article

COMBINED ION IMPLANTATION-ANALYSIS SAMPLE CHAMBER.PETERSON GD; EERNISSE EP.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 1153-1156; BIBL. 3 REF.Article

THE CHARACTERIZATION OF GAAS SURFACES.WOOD DR; MORGAN DV.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 773-777; BIBL. 15 REF.Article

KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON.POATE JM; TISONE TC.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 8; PP. 391-393; BIBL. 14 REF.Article

EFFECT OF PLANAR OSCILLATIONS ON IMPLANTED DISTRIBUTIONS MEASURED BY LOW-ANGLE HE+ BACKSCATTERING.WAGH AG; WILLIAMS JS.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 175-176; BIBL. 8 REF.Article

THE DEPENDENCE OF ANGULAR WIDTH PSI 1/2 OF THE AXIAL DIP ON THE DEPTH OF PARTICLE PENETRATION INTO CRYSTAL.KUMAKHOV MA; MURALEV VA; RUDNEV AS et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 4; PP. 273-275; BIBL. 9 REF.Article

REALISATION DE MONOCRISTAUX MINCES PAR EPITAXIE ET ETUDE DE LEUR QUALITE PAR DIFFUSION DE RUTHERFORD EN GEOMETRIE DE CANALISATION.KIRSCH R.1975; ; S.L.; DA. 1975; PP. (63P.); BIBL. 2 P.; (THESE DOCT. UNIV., MENTION SCI. PHYS.; CLAUDE BERNARD LYON)Thesis

The fingers of the physicsFOSCHINI, L.Annales de la Fondation Louis de Broglie. 2000, Vol 25, Num 1, pp 67-79, issn 0182-4295Article

Optimized Rutherford-scattering geometries for intense ion-beam diagnosticsSTYGAR, W. A; MIX, L. P; LEEPER, R. J et al.Review of scientific instruments. 1991, Vol 62, Num 6, pp 1527-1530, issn 0034-6748Article

A study of the thermally induced carbonization of phenolformaldehyde by combined ion beam and surface specific analysesILA, D; JENKINS, G. M; HOLLAND, L. R et al.Vacuum. 1994, Vol 45, Num 4, pp 451-454, issn 0042-207XConference Paper

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