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Results 1 to 25 of 1155

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Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnectsHSU, Kuo-Chung; PERNG, Dung-Ching; YEH, Jia-Bin et al.Applied surface science. 2012, Vol 258, Num 18, pp 7225-7230, issn 0169-4332, 6 p.Article

Ultrathin amorphous Ni―Ti film as diffusion barrier for Cu interconnectionLIU, B. T; YANG, L; LI, X. H et al.Applied surface science. 2011, Vol 257, Num 7, pp 2920-2922, issn 0169-4332, 3 p.Article

Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnectsBYUNGHOON LEE; HASEOK JEON; KWON, Kee-Won et al.Acta materialia. 2013, Vol 61, Num 18, pp 6736-6742, issn 1359-6454, 7 p.Article

Pinhole density measurements of barriers deposited on low-k filmsSHANFIRYAN, D; ABELL, T; LE, Q. T et al.Microelectronic engineering. 2003, Vol 70, Num 2-4, pp 341-345, issn 0167-9317, 5 p.Conference Paper

Interdiffusion reaction in the CrN interlayer in the NiCrAlY/CrN/DSM11 system during thermal treatmentLI, W. Z; WANG, Q. M; GONG, J et al.Applied surface science. 2009, Vol 255, Num 18, pp 8190-8193, issn 0169-4332, 4 p.Article

Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulationsLING DAI; TAN, V. B. C; YANG, Shuo-Wang et al.Surface science. 2007, Vol 601, Num 16, pp 3366-3371, issn 0039-6028, 6 p.Article

Preparation and annealing study of TaNx coatings on WC-Co substratesCHEN, Yung-I; LIN, Bo-Lu; KUO, Yu-Chu et al.Applied surface science. 2011, Vol 257, Num 15, pp 6741-6749, issn 0169-4332, 9 p.Article

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrierBUM HO CHOI; JONG HO LEE; HONG KEE LEE et al.Applied surface science. 2011, Vol 257, Num 22, pp 9654-9660, issn 0169-4332, 7 p.Article

Characteristics of a 10 nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnectsTSAI, Du-Cheng; HUANG, Yen-Lin; LIN, Sheng-Ru et al.Surface & coatings technology. 2011, Vol 205, Num 21-22, pp 5064-5067, issn 0257-8972, 4 p.Article

Effect of W addition on the electroless deposited NiP(W) barrier layerYISHI TAO; ANMIN HU; TAO HANG et al.Applied surface science. 2013, Vol 282, pp 632-637, issn 0169-4332, 6 p.Article

Effect of composition on electroless deposited Ni―Co―P alloy thin films as a diffusion barrier for copper metallizationKUMAR, Anuj; KUMAR, Mukesh; KUMAR, Dinesh et al.Applied surface science. 2012, Vol 258, Num 20, pp 7962-7967, issn 0169-4332, 6 p.Article

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallizationZHOU, Y. M; HE, M. Z; XIE, Z et al.Applied surface science. 2014, Vol 315, pp 353-359, issn 0169-4332, 7 p.Article

Phosphorous doped Ru film for advanced Cu diffusion barriersPERNG, Dung-Ching; YEH, Jia-Bin; HSU, Kuo-Chung et al.Applied surface science. 2008, Vol 254, Num 19, pp 6059-6062, issn 0169-4332, 4 p.Conference Paper

Investigation of ultrathin tantalum based diffusion barrier films using AES and TEMDITTMAR, Kornelia; ENGELMANN, Hans-Jürgen; PEIKERT, M et al.Applied surface science. 2005, Vol 252, Num 1, pp 185-188, issn 0169-4332, 4 p.Conference Paper

A high-temperature oxidation-resistant diffusion barrier for PbZrxTi1-xO3 coating on nanocrystalline diamond filmPARK, Jong-Keuk; YOON, Ju-Heon; LEE, Hak-Joo et al.Applied surface science. 2014, Vol 313, pp 577-580, issn 0169-4332, 4 p.Article

The addition of aluminium to ruthenium liner layers for use as copper diffusion barriersMCCOY, A. P; BOGAN, J; WALSH, L et al.Applied surface science. 2014, Vol 307, pp 677-681, issn 0169-4332, 5 p.Article

Phase analysis of TaN/Ta barrier layers in sub-micrometer trench structures for Cu interconnectsTRAVING, M; ZIENERT, I; ZSCHECH, E et al.Applied surface science. 2005, Vol 252, Num 1, pp 11-17, issn 0169-4332, 7 p.Conference Paper

Graphene with line defect as a membrane for gas separation: Design via a first-principles modelingXIAN QIN; QINGYUAN MENG; YUANPING FENG et al.Surface science. 2013, Vol 607, pp 153-158, issn 0039-6028, 6 p.Article

The protective properties of ultra-thin diamond like carbon films for high density magnetic storage devicesMIN ZHONG; CHENHUI ZHANG; JIANBIN LUO et al.Applied surface science. 2009, Vol 256, Num 1, pp 322-328, issn 0169-4332, 7 p.Article

Analytical W―He and H―He interatomic potentials for a W―H―He systemLI, Xiao-Chun; XIAOLIN SHU; LIU, Yi-Nan et al.Journal of nuclear materials. 2012, Vol 426, Num 1-3, pp 31-37, issn 0022-3115, 7 p.Article

Perspectives of suspension plasma spraying of palladium nanoparticles for preparation of thin palladium composite membranesBOELTKEN, Tim; SOYSAL, Dennis; SEUNGCHEOL LEE et al.Journal of membrane science (Print). 2014, Vol 468, pp 233-241, issn 0376-7388, 9 p.Article

Cu(In,Ga)Se2 solar cells on stainless-steel substrates covered with ZnO diffusion barriersSHI, C. Y; YUN SUN; QING HE et al.Solar energy materials and solar cells. 2009, Vol 93, Num 5, pp 654-656, issn 0927-0248, 3 p.Article

Influence of low-k dry etch chemistries on the properties of copper and a Ta-based diffusion barrierERNUR, D; IACOPI, F; CARBONELL, L et al.Microelectronic engineering. 2003, Vol 70, Num 2-4, pp 285-292, issn 0167-9317, 8 p.Conference Paper

Pd—Cu alloy membrane deposited on CeO2 modified porous nickel support for hydrogen separationRYI, Shin-Kun; AHN, Hyo-Sun; PARK, Jong-Soo et al.International journal of hydrogen energy. 2014, Vol 39, Num 9, pp 4698-4703, issn 0360-3199, 6 p.Conference Paper

First-principles investigation on dissolution and diffusion of oxygen in tungstenALKHAMEES, Abdullah; LIU, Yue-Lin; ZHOU, Hong-Bo et al.Journal of nuclear materials. 2009, Vol 393, Num 3, pp 508-512, issn 0022-3115, 5 p.Article

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