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Quantification of hydrogen diffusion and trapping in 2.25Cr-1 Mo and 3Cr-1 Mo-V steels with the electrochemical permeation technique and melt extractionsBRASS, A.-M; GUILLON, F; VIVET, S et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2004, Vol 35, Num 5, pp 1449-1464, issn 1073-5623, 16 p.Article

Anomalous hydroxyl diffusion profile in silica glassSATO, R; TOMOZAWA, M.Journal of non-crystalline solids. 2003, Vol 321, Num 1-2, pp 66-72, issn 0022-3093, 7 p.Article

Correlation between abnormal deuterium flux and heat flow in a D/Pd systemXING ZHONG LI; BIN LIU; JIAN TIAN et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 23, pp 3095-3097, issn 0022-3727, 3 p.Article

Cation tracer diffusion of 138La, 84Sr and 25Mg in polycrystalline La0.9Sr0.1Ga0.9Mg0.1O2.9 : Complex oxide: defect chemistry, transport and chemical reactionSCHULZ, Olaf; MARTIN, Manfred; ARGIRUSIS, Christos et al.PCCP. Physical chemistry chemical physics (Print). 2003, Vol 5, Num 11, pp 2308-2313, issn 1463-9076, 6 p.Conference Paper

Diffusion of Li+ ion in graphite cluster model at 800 K: a direct molecular orbital dynamics studySHIMIZU, Akira; TACHIKAWA, Hiroto.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 4, pp 619-624, issn 0022-3697Article

Distribution of interacting ionic particles in disordered mediaGOLESTANIAN, R.Europhysics letters (Print). 2002, Vol 58, Num 5, pp 712-717, issn 0295-5075Article

Interstitial impurity diffusion in metals; the apparent size effectNEUMANN, G; TUIJN, C.Physica. B, Condensed matter. 2002, Vol 315, Num 1-3, pp 164-170, issn 0921-4526Article

Modifying of materials by counter-diffusion of reagentsGORSHENEV, V. N; BIBIKOV, S. B; SPECTOR, V. N et al.Materials chemistry and physics. 2002, Vol 74, Num 2, pp 154-159, issn 0254-0584Article

Energetics and diffusivity of atomic boron in silicon by density-functional-based tight-binding simulationsALIPPI, Paola; COLOMBO, Luciano; RUGGERONE, Paolo et al.Computational materials science. 2001, Vol 22, Num 1-2, pp 44-48, issn 0927-0256Article

Tracer diffusion of iron in α-Mn1±yS polycrystalsGILEWICZ-WOLTER, Jolanta; WOLTER, Marcin.Solid state communications. 2001, Vol 117, Num 12, pp 719-722, issn 0038-1098Article

Diffusion of scandium, gallium and ytterbium ions into single- and poly-crystalline yttrium aluminum garnetsHANEDA, Hajime; MIYAZAWA, Yasuto; SAKAGUCHI, Isao et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2001, Vol 109, Num 2, pp 114-121, issn 0914-5400Article

Nitrogen effect on gold diffusion in Cz SiPARAKHONSKY, A. L; YAKIMOV, E. B; YANG, D et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 396-399, issn 0921-4526Conference Paper

Simultaneous determination of activity coefficient and diffusion coefficient of boron in single crystalline siliconFUKUYAMA, H; TAKASAGO, J; KAWAGISHI, K et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 5, pp 1965-1969, issn 0013-4651Article

Al and Ag diffusion study in α-titaniumARAUJO, L. L; BEHAR, M.Applied physics. A, Materials science & processing (Print). 2000, Vol 71, Num 2, pp 169-174, issn 0947-8396Article

Interaction of p-type dopants during diffusion in InPTUCK, B; SHEPHERD, F. R; KELLY, G et al.Semiconductor science and technology. 2000, Vol 15, Num 3, pp 254-258, issn 0268-1242Article

Tracer diffusion via bound vacancy pairs in mixed ionic crystalsBELOVA, I. V; MURCH, G. E.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1999, Vol 79, Num 11, pp 2681-2690, issn 1364-2804Article

Analysis of dopant diffusion in si with stacking faultsOKINO, T; SHIMOZAKI, T.Materials transactions - JIM. 1999, Vol 40, Num 6, pp 474-478, issn 0916-1821Article

Diffusion of oxygen in silverBAIRD, J. K; KING, T. R; STEIN, C et al.The Journal of physics and chemistry of solids. 1999, Vol 60, Num 7, pp 891-894, issn 0022-3697Article

Sb diffusion in heavily doped Ssi substratesSUZUKI, K; TASHIRO, H; AOYAMA, T et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 1, pp 336-338, issn 0013-4651Article

Effect of segregation on the formation of interface structures. Example of Cr-doped CoOBERNASIK, A; KOWALSKI, K; NOWOTNY, J et al.Solid state ionics. 1999, Vol 117, Num 1-2, pp 171-173, issn 0167-2738Article

Measurement of phenomenological cross terms by radioactive co-tracer diffusion in glassPOLING, S. A; HOUDE-WALTER, S. N.Journal of non-crystalline solids. 1999, Vol 255, Num 1, pp 78-86, issn 0022-3093Conference Paper

Diffusion of iron in silicon dioxideRAMAPPA, D. A; HENLEY, W. B.Journal of the Electrochemical Society. 1999, Vol 146, Num 10, pp 3773-3777, issn 0013-4651Article

Boron diffusion in compressively stressed float zone-silicon induced by Si3N4 filmsZAITSU, Y; SHIMIZU, T; TAKEUCHI, J et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 1, pp 258-264, issn 0013-4651Article

Boron diffusion in silicon oxides and oxynitridesELLIS, K. A; BUHRMAN, R. A.Journal of the Electrochemical Society. 1998, Vol 145, Num 6, pp 2068-2074, issn 0013-4651Article

Induced electric field effect on heavily compensated p-type semiconductorsWARTLICK, B. O; BLANCHARD, C; BARBOT, J. F et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1998, Vol 78, Num 1, pp 79-86, issn 1364-2812Article

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