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Results 1 to 25 of 1470

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Inexpensive spot-profile analysis reflection high energy electron diffractionIDZERDA, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 6, pp 3138-3140, issn 0734-2101Article

Theory of RHEED and application to surface structure studiesICHIMIYA, A; KOHMOTO, S; NAKAHARA, H et al.Ultramicroscopy. 1993, Vol 48, Num 4, pp 425-432, issn 0304-3991Article

On the RHEED specular beam and its intensity oscillation during MBE growth of GaAsZHANG, J; NEAVE, J. H; JOYCE, B. A et al.Surface science. 1990, Vol 231, Num 3, pp 379-388, issn 0039-6028, 10 p.Article

Intensity enhancement and plasmon inelastic scattering in rheedWANG, Z. L.Surface science. 1989, Vol 214, Num 1-2, pp 44-56, issn 0039-6028, 13 p.Article

Picosecond reflection high-energy electron diffractionELSAYED-ALI, H. E; MOUROU, G. A.Applied physics letters. 1988, Vol 52, Num 2, pp 103-104, issn 0003-6951Article

Current flow in reflection electron microscopy and RHEEDMARKS, L. D; MA, Y.Acta crystallographica. Section A, Foundations of crystallography. 1988, Vol 44, Num 3, pp 392-393, issn 0108-7673Article

Characteristic features in RHEED patterns of disordered surfaces: theoretical considerationsMEYER-EHMSEN, G; BOLGER, B; LARSEN, P. K et al.Surface science. 1989, Vol 224, Num 1-3, pp 591-612, issn 0039-6028Article

Si(111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high-energy electron diffractionHIRAYAMA, H; TATSUMI, T.Journal of applied physics. 1989, Vol 66, Num 2, pp 629-633, issn 0021-8979, 5 p.Article

Clean and damage-free GaAs surfaces prepared by ultrasonic running deionized water treatmentHIROTA, Y; HOMMA, Y; SUGII, K et al.Applied surface science. 1992, Vol 60-61, pp 619-624, issn 0169-4332Conference Paper

Kinematical analysis of RHEED intensities from the Si(111)7×7 structureHORIO, Y; ICHIMIYA, A.Surface science. 1989, Vol 219, Num 1-2, pp 128-142, issn 0039-6028, 15 p.Article

Development of energy-filtered reflection high-energy electron diffraction apparatusHORIO, Y; HASHIMOTO, Y; SHIBA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 10, pp 5869-5870, issn 0021-4922, 1Article

Microscopic processes in deposition-concurrent surface segregationSANO, K.-I; MIYAGAWA, T.Applied surface science. 1992, Vol 60-61, pp 813-819, issn 0169-4332Conference Paper

Effects of the lattice mismatch and vicinal polishing on the heteroepitaxial growth of Bi2Sr2CuOx buffer layers on MgO (100) for Bi-Sr-Ca-Cu-O filmsKAMEI, M; YOSHIDA, I; MORISHITA, T et al.Physica. C. Superconductivity. 1991, Vol 182, Num 1-3, pp 123-126, issn 0921-4534Article

Limits of imaging resolution for atomic force microscopy of moleculesWEIHS, T. P; NAWAS, S; JARVIS, S. P et al.Applied physics letters. 1991, Vol 59, Num 27, pp 3536-3538, issn 0003-6951Article

Rheed study of crystal growth of high temperature superconducting oxides in reactive coevaporationBANDO, Y; TERASHIMA, T; SHIMURA, K et al.Physica. C. Superconductivity. 1991, Vol 180, Num 1-4, pp 3-10, issn 0921-4534Conference Paper

Picosecond time-resolved surface-lattice temperature procheELSAYED-ALI, H. E; HERMAN, J. W.Applied physics letters. 1990, Vol 57, Num 15, pp 1508-1510, issn 0003-6951Article

RHEED intensity oscillation during epitaxial growth of layered materialsSHIMADA, T; YAMAMOTO, H; SAIKI, K et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp L2096-L2098, issn 0021-4922, 2Article

A new interpretation of the 22-tricosenoic acid Langmuir-Blodgett structures identified as triclinic by RHEEDROBINSON, I; PETERSON, I. R; SAMBLES, J. R et al.Philosophical magazine letters. 1990, Vol 62, Num 2, pp 101-106, issn 0950-0839Article

Growth mechanism in migration-enhanced epitaxy of AlAs on misoriented GaAs(111)B substratesTAKANO, Y; TORIHATA, T; KAWAI, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 8, pp L1346-L1349, issn 0021-4922, 2Article

High-energy electron diffraction from transverse stacking faults in the projection approximationJESSON, D. E; STEDS, J. W.Ultramicroscopy. 1989, Vol 31, Num 4, pp 399-430, issn 0304-3991Article

NATO advanced research workshop on reflection high-energy electron diffraction and reflection electron imaging of surfaces, June 15-19, 1987, Veldhoven, NLDLARSEN, P. K; DOBSON, P. J.NATO Advanced Study Institute series. Series B, Physics. 1988, Vol 188, issn 0258-1221, XIII-541 p. [554 p.]Conference Proceedings

Effect of surfactants on surface migration in Si MBESAKAMOTO, K; MIKI, K; SAKAMOTO, T et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 392-395, issn 0022-0248Conference Paper

An isolating algorithm for automated surface structure determination using RHEEDPENG, L.-M; WHELAN, M. J.Surface science. 1992, Vol 268, Num 1-3, pp L325-L329, issn 0039-6028Article

Reflection high-energy electron diffraction patterns of CrSi2 films on (111) siliconMAHAN, J. E; GEIB, K. M; ROBINSON, G. Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 64-68, issn 0734-211XArticle

Dynamic reflection high-energy electron diffraction observation of 3C-SiC(001) surface reconstruction under Si2H6 beam irridiationYOSHINOBU, T; IZUMIKAWA, I; MITSUI, H et al.Applied physics letters. 1991, Vol 59, Num 22, pp 2844-2846, issn 0003-6951Article

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