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Diffusion noise of an electrokinetic transducerANTOKHIN, A. YU; KOZLOV, V. A; THOMAS, J. G et al.Technical physics. 1993, Vol 38, Num 7, pp 539-541, issn 1063-7842Article

Parallel computational techniques for simulating dopant diffusion in siliconBISWAS, R; AMARATUNGA, G. A. J.IEE proceedings. Part G. Electronic circuits and systems. 1989, Vol 136, Num 3, pp 135-137, issn 0143-7089, 3 p.Article

Calcul par le pseudopotentiel des potentiels de diffusion entre valléesGRINYAEV, S. N; KARAVEEV, G. F; TYUTEREV, V. G et al.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2753-2756, issn 0367-3294Article

Nonstationary diffusion through arbitrary piecewise-linear potential profile. Exact solution and time characteristicsAGUDOV, N. V; MALAKHOV, A. N.Radiophysics and quantum electronics. 1993, Vol 36, Num 2, pp 97-109, issn 0033-8443Article

Photoexcited carrier diffusion near a Si(111) surface and in the Si bulkLI, C. M; SJODIN, T; YING, Z. C et al.Applied surface science. 1996, Vol 104-05, pp 57-60, issn 0169-4332Conference Paper

Electrical transport properties of highly doped N-type GaN epilayersLEE, H. J; CHEONG, M. G; SUH, E.-K et al.SPIE proceedings series. 1998, pp 321-326, isbn 0-8194-2726-8Conference Paper

Paraconductivity in an unconventional layered superconductorYIP, S.Journal of low temperature physics. 1990, Vol 81, Num 3-4, pp 129-146, issn 0022-2291, 18 p.Article

Perpendicular transport through rough interfaces in the metallic regimeBRATAAS, A; BAUER, G. E. W.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1239-1242, issn 0038-1101Conference Paper

Diffusion of delta doped boron in silicon following oxidationO'NEILL, A. G; BARLOW, R. D; BISWAS, R. G et al.Electronics Letters. 1993, Vol 29, Num 3, pp 263-264, issn 0013-5194Article

Elastic scattering of fast electrons in a real crystalBORGARDT, N. I; KIRSCH, S. G.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 296-300, issn 0038-5638Article

Der Einfluss der Ladungsträger-Diffusion auf den Photowiderstand von optoelektronischen SchalternWEBER, N.AEU. Archiv für Elektronik und Übertragungstechnik. 1990, Vol 44, Num 4, pp 302-305, issn 0001-1096Article

Manifestation of carrier diffusion in coulomb blockade phenomenaNAZAROV, Y. V.Physics letters. A. 1990, Vol 147, Num 1, pp 81-83, issn 0375-9601Article

Anomalous transport in lattice and continuum percolating systemsYU, K. W.Physical review. B, Condensed matter. 1986, Vol 33, Num 11, pp 7748-7752, issn 0163-1829Article

Frontiers in electronic noise : From submicron to nano structuresREGGIANI, L; PENETTA, C; MATEOS, J et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 111-117Conference Paper

Solid state diffusion in GaAs/AuGe/Ni and GaAs/Ni/AuGe/Ni ohmic contactsREILLING, E; BOTHA, A. P.Applied surface science. 1989, Vol 35, Num 3, pp 380-387, issn 0169-4332, 8 p.Article

Ballistic charge-carrier transport in semiconductor point contactsTRZCINSKI, R; GMELIN, E; QUEISSER, H. J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 12, pp 6373-6378, issn 0163-1829Article

Carrier transport in AlGaInP laser structuresBLOOD, P; WOOD, S; SMOWTON, P. M et al.SPIE proceedings series. 1999, pp 476-484, isbn 0-8194-3095-1Conference Paper

The time of diffusion and infinite conductivity of High-TcsuperconductorsBUZEA, C. G; AGOP, M; REZLESCU, N et al.Physica status solidi. B. Basic research. 1998, Vol 205, Num 2, pp 595-602, issn 0370-1972Article

Deep energy levels in power diodes introduced by iridium diffusionBENDA, V; CERNIK, M; STEPKOVA, D et al.International conference on microelectronic. 1997, pp 391-394, isbn 0-7803-3664-X, 2VolConference Paper

Are there extra scattering mechanisms in the well of a resonant-tunneling diode?MORRISEY, R. A; ALAM, M. A; KHONDKER, A. N et al.Physica. B, Condensed matter. 1992, Vol 182, Num 1, pp 61-63, issn 0921-4526Article

Diffusion in electromagnetic theoryMONZON, J. C; LAKHTAKIA, A.Indian journal of pure & applied physics. 1991, Vol 29, Num 8, pp 541-546, issn 0019-5596Article

Reactive ion etching of zinc doped InP using methane and hydrogen : assessment of the degree and extent of changes in surface carrier concentrationSINGH, J.Journal of applied physics. 1990, Vol 68, Num 10, pp 5383-5384, issn 0021-8979Article

Re-examination of a constant ratio approximation in the theory of the transition from free to ambipolar diffusionDOTE, T; SHIMADA, M.Journal of the Physical Society of Japan. 1986, Vol 55, Num 1, pp 427-428, issn 0031-9015Article

Analysis of the generation of the misfit dislocations during the boron prediffusion in siliconGAISEANU, F; KISSINGER, G; KRUGER, D et al.SPIE proceedings series. 1998, pp 281-289, isbn 0-8194-2966-XConference Paper

2D-diffuse : A two dimensional process simulator for diffusion under neutral and oxidizing ambient for VLSI applicationSINGH, P. K; DAS, B. K.SPIE proceedings series. 1998, pp 1060-1063, isbn 0-8194-2756-X, 2VolConference Paper

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