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TunnettMOTOYA, K; NISHIZAWA, J.International journal of infrared and millimeter waves. 1985, Vol 6, Num 7, pp 483-495, issn 0195-9271Article

High-power pulsed beam-lead IMPATT diodes for millimetre wavesPIERZINA, R; FREYER, J.Electronics Letters. 1985, Vol 21, Num 20, pp 913-915, issn 0013-5194Article

Microwave detecting diode rise-time measurementsBALLARD, W. P; EARDLEY, L. M.Review of scientific instruments. 1985, Vol 56, Num 7, pp 1470-1472, issn 0034-6748Article

HIGH-POWER PT SCHOTTKY BARITT DIODES.AHMAD S; FREYER J.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 238-239; BIBL. 6 REF.Article

READ-TYPE VARACTORS FOR PARAMETRIC AMPLIFIER APPLICATIONSPETERSON DF; HADDAD GI.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 9; PP. 945-951; BIBL. 2 REF.Article

Transmission coefficient and tunneling relaxation time in MIS tunnel diodesSHIMER, J. A; DAHLKE, W. E.Solid-state electronics. 1983, Vol 26, Num 11, issn 0038-1101, 1129Article

Degradation of yellow light-emitting GaAs0.1P0.9:N diodes. I: Implanted diodesRHEINLÄNDER, B; OELGART, G; REULKE, R et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 527-534, issn 0031-8965Article

ELECTROLUMINESCENCE IN ZNSIP2 SCHOTTKY DIODES.SIEGEL W; BECHERER H; KIHNEL G et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 75-80; ABS. ALLEM.; BIBL. 17 REF.Article

BARITT DIODES FOR KA-BAND FREQUENCIESFREYER J; FOERG PN.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 2; PP. 78-80; BIBL. 14 REF.Article

A simple method for investigating charge storage effect in MIS switching diodesPHAN, H. K; BINH, P. H; PHU, L. H et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp K81-K84, issn 0031-8965Article

High radiance AlGaAs DH LED array by MBESUGAHARA, T; WADA, O; SAKURAI, T et al.Fujitsu scientific and technical journal. 1983, Vol 19, Num 3, pp 315-322, issn 0016-2523Article

PROCESSUS DE DISPARITION DES DOMAINES MOBILES DANS LES DIODES DE GUNN PLANARSBROVKIN YU N; KOSTYLEV SA; PROKHOROV EF et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 219-222; BIBL. 9 REF.Article

TRANSIT-TIME EFFECTS ON NOISE IN PLANAR CROSSED-FIELD ELECTRON GENESHARKER KJ; CRAWFORD FW.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 851-861; BIBL. 3 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article

PROPRIETES FONDAMENTALES DE LA COUCHE ENRICHIE DANS UNE DIODE GUNND'YAKONOV MI; LEVINSHTEJN ME; SIMIN GS et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2116-2126; BIBL. 17 REF.Article

Local analysis of extraordinary-mode stability properties for relativistic-non-neutral electron flow in a planar diodeDAVIDSON, R. C; UHM, H. S.Journal of plasma physics. 1987, Vol 37, Num 1, pp 63-79, issn 0022-3778Article

Resonant interband tunnel diodesSWEENY, M; JINGMING XU.Applied physics letters. 1989, Vol 54, Num 6, pp 546-548, issn 0003-6951, 3 p.Article

Gain characteristics of a distributed IMPATT deviceSOOHOO, J.I.E.E.E. transactions on electron devices. 1983, Vol ED 30, Num 10, pp 1405-1406, issn 0018-9383Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

Double epitaxy improve single-photon avalanche diode performanceLACAITA, A; GHIONI, M; COVA, S et al.Electronics Letters. 1989, Vol 25, Num 13, pp 841-843, issn 0013-5194, 3 p.Article

Contribution à l'étude des dispositifs à jonction P-N en gamme millimétrique : application aux diodes avalanche en régime de génération directe et harmonique = Millimeter wave p-n jonction device study: application to avalanche diodes in direct an harmonic generation modeDALLE, Christophe; ROLLAND, Paul-Alain.1986, 218 pThesis

FREQUENCY INCREASE IN PULSED AVALANCHE DIODESSTATZ H; WALLAGE RN.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1064-1067; BIBL. 8 REF.Article

IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A PLANAR MICROWAVE P-I-N DIODE BY THE BEVELLING TECHNIQUEVAYA PR; KAKATI D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. K67-K69; BIBL. 7 REF.Article

THE ADMITTANCE BEHAVIOR OF LOW-HIGH-LOW GAAS SCHOTTKY IMPATT DIODESEKNOYAN O; KEMERLEY RT; HOURANI SM et al.1979; I.E.E.E. TRANS. COMPON. HYBRIDS MANUFG TECHNOL.; USA; DA. 1979; VOL. 2; NO 2; PP. 254-257; BIBL. 9 REF.Article

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