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NOISE IN SINGLE INJECTION DIODES. II. APPLICATIONS.VAN VLIET KM; FRIEDMANN A; ZIJLSTRA RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1814-1823; BIBL. 17 REF.Article

GENERATEUR MILLIMETRIQUE A FAIBLE BRUIT A INJECTION PAR EFFET TUNNEL.DELAGEBEAUDEUF D; MEIGNANT D.1975; DGRST-7470435; FR.; DA. 1975; PP. (46P.); H.T. 32; BIBL. 2 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

NOISE IN SINGLE INJECTION DIODES. I. A SURVEY OF METHODS.VAN VLIET KM; FRIEDMANN A; ZIJLSTRA RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1804-1813; BIBL. 42 REF.Article

RADIATION FROM DOUBLE INJECTION DEVICESASHLEY KL.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 641-643; BIBL. 8 REF.Serial Issue

CONNECTION BETWEEN SOURCES FORMALISM AND CORRELATION FORMALISM FOR TRANSPORT NOISE: APPLICATION TO INJECTION DIODES.VAN VLIET KM; BLASQUEZ G.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 768-771; BIBL. 9 REF.Article

PROPERTIES OF THE ELECTRON-HOLE CONDENSATE IN GE DOUBLE-INJECTION DIODES. II.CHEN M; MARRELLO V; MCGILL TC et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 1617-1621; BIBL. 11 REF.Article

PROPERTIES OF THE ELECTRON-HOLE LIQUID LUMINESCENCE IN SI DOUBLE INJECTION DIODES.HAMMOND RB; MCGILL TC; MAYER JW et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 59-66; ABS. ALLEM.; BIBL. 15 REF.Article

MODELE ANALYTIQUE SIMPLE PERMETTANT D'INTERPRETER LES DIVERS EFFETS NON LINEAIRES ASSOCIES AU FONCTIONNEMENT A FORT NIVEAU DES DIODES A INJECTION THERMO-IONIQUE.DELAGEBEAUDEUF D.1975; LEV. TECH. THOMSON-CSF; FR.; DA. 1975; VOL. 7; NO 2; PP. 195-213; ABS. ANGL. ALLEM.; BIBL. 5 REF.Article

DOUBLE-INJECTION DIODE AS A PULSE WIDTH MODULATION ELEMENTKAPOOR AK; THURMAN HENDERSON H.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 64-66; BIBL. 8 REF.Article

DIFFUSION NOISE IN DOUBLE INJECTION DIODES.HUANG C; VAN DER ZIEL A.1974; PHYSICA; PAYS-BAS; DA. 1974; VOL. 78; NO 2; PP. 220-232; BIBL. 8 REF.Article

NOISE AND HOT CARRIER EFFECTS IN A SINGLE INJECTION SOLID STATE DIODE.GISOLF A; ZIJLSTRA RJJ.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 839-841; BIBL. 7 REF.Article

INFLUENCE DE LA CHARGE D'ESPACE SUR L'IMPEDANCE D'UNE DIODE A DOUBLE INJECTIONZYKOV NV; ORESHKIN GI; SURIS RA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2044-2046; BIBL. 3 REF.Article

UNIAXIAL STRESS EFFECTS ON DOUBLE INJECTION DIODES.HAYASHI T; LIDA S.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 348-349; BIBL. 9 REF.Article

THE INFLUENCE OF THE DIELECTRIC RELAXATION ON THE CURRENT FLOW IN HIGH-OHMIC SEMICONDUCTING DIODES. = INFLUENCE DE LA RELAXATION DIELECTRIQUE SUR LE FLUX DU COURANT DANS LES DIODES SEMICONDUCTRICES FORTEMENT OHMIQUESHEDER G; MADELUNG O.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 215-221; ABS. ALLEM.; BIBL. 11 REF.Article

THERMAL NOISE IN DOUBLE INJECTION DIODES OPERATING IN THE INSULATOR REGIMEZIJLSTRA RJJ; GISOLF A.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 8; PP. 877-881; BIBL. 6 REF.Serial Issue

HOT CARRIER EFFECT IN SINGLE INJECTION DIODE WITH THERMAL FREE CARRIERS.SHARMA YK; SRIVASTAVA BB.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 633-638; ABS. ALLEM.; BIBL. 8 REF.Article

CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE A SEMICONDUCTEURGORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 12; PP. 2559-2566; BIBL. 9 REF.Article

LATTICE INTERACTION NOISE OF HOT CARRIERS IN SINGLE INJECTION SOLID STATE DIODESGISOLF A; ZIJLSTRA RJJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 571-580; BIBL. 18 REF.Serial Issue

Carrier density fluctuations in single injection solid state diode with thermal free carriersKUMAR, G; SHARMA, Y. K; NAGAYACH, A. V et al.Indian journal of pure & applied physics. 1990, Vol 28, Num 11, pp 659-660, issn 0019-5596Article

Modélisation numérique des pulsations de courant à haute fréquence dans des diodes à injection bipolaire pour un mouvement quasi balistique des électrons et des trousBANNOV, N. A; RYZHIJ, V. I; SVYATCHENKO, A. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 12, pp 2227-2231, issn 0015-3222Article

Impédance d'une diode longue pour la double injection de porteurs modifiant peu la quasi-neutralitéBLOKHIN, I. K; KHOLODNOV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1761-1765, issn 0015-3222Article

SMALL-SIGNAL CHARACTERISTICS OF SEMICONDUCTOR PUNCH-THROUGH INJECTION AND TRANSIT-TIME DIODESWRIGHT GT.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 903-912; BIBL. 12 REF.Serial Issue

PT-CU2O-CU DOUBLE INJECTION DIODES.CHEE KT; WEICHMAN FL.1977; CANAD. J. PHYS.; CANADA; DA. 1977; VOL. 55; NO 7-8; PP. 727-734; ABS. FR.; BIBL. 9 REF.Article

DOUBLE INJECTION IN SEMICONDUCTORS.MIGLIORATO P; MARGARITONDO G; PERFETTI P et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 656-663; BIBL. 21 REF.Article

CARACTERISTIQUES A FAIBLES SIGNAUX DES DIODES A INJECTION-TRANSFERT AYANT DES PORTEURS DE COURANT A MOBILITE DIFFERENTIELLE NEGATIVESULIMOV VB; TAGER AS.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 2; PP. 396-404; BIBL. 6 REF.Article

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