Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Diode semiconducteur")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 423

  • Page / 17
Export

Selection :

  • and

Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article

Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article

Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiersZIMMERMAN, Jeramy; BROWN, Elliott; GOSSARD, Art et al.DRC : Device research conference. 2004, pp a6-a7, isbn 0-7803-8284-6, 1VolConference Paper

Solid-state lighting: The future looks bright : Opening the grid across continentsPATEL, Prachi.MRS bulletin. 2011, Vol 36, Num 9, pp 678-680, issn 0883-7694, 3 p.Article

Modelling of diode forward recovery characteristics using a modified charge-control equationTSENG, K. J.International journal of electronics. 1998, Vol 84, Num 5, pp 437-444, issn 0020-7217Article

Effet du profil de la distribution des impuretés dans la couche de base d'une structure diode à semiconducteur sur l'écoulement du courant en régime balistique ou quasi balistiqueBANNOV, N. A; RYZHIJ, V. I.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 148-151, issn 0544-1269Article

A novel β-SiC/Si heterojunction backward diodeHWANG, J. D; FANG, Y. K; CHEN, K. H et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 193-195, issn 0741-3106Article

ELECTRON-BOMBARDED SEMICONDUCTOR: (EBS) SWITCHMACDONALD RI; HUM RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 609-611; BIBL. 9 REF.Article

RECOMBINATION INSTABILITIES IN SEMICONDUCTORS DOPED WITH DEEP TWO-LEVEL TRAPSANTOGNETTI P; CHIABRERA A; RIDELLA S et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4676-4680; BIBL. 17 REF.Serial Issue

ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article

SUR UNE POSSIBILITE D'EVALUER LES PROPRIETES DE RECOMBINAISON DES CONTACTS ET LEUR EFFET SUR LA CARACTERISTIQUE DE DIODES A SEMICONDUCTEURSGEJFMAN EM; GREKHOV IV; KOSTINA LS et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 386-391; BIBL. 6 REF.Article

DIRECT DETECTION OF MICROWAVE SIGNALS BY SOLID STATE DIODES.GREEN HE.1977; ELECTR. ENGNG TRANS.; AUSTRAL.; DA. 1977; VOL. 13; NO 2; PP. 63-68; BIBL. 7 REF.Article

EFFECT OF JUNCTION HEATING ON THE MAGNETOCURRENT IN SEMICONDUCTOR DIODESSWAMI R; LAL D; TANTRY BAP et al.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 5; PP. 629-632; BIBL. 2 REF.Serial Issue

High-speed high-voltage current diodesBERLIN, A. S; LEZZHOV, Yu. F; TISHCHENKOV, N. T et al.Russian electrical engineering. 1996, Vol 67, Num 12, pp 13-14, issn 1068-3712Article

Semiconductor diode lasers : a new laser light source in ophthalmologyBALLES, M. W; PULIAFITO, C. A.International ophthalmology clinics. 1990, Vol 30, Num 2, pp 77-83, issn 0020-8167Article

OPTIMISATION ET REALISATION D'UNE PERIPHERIE PLANAR HAUTE TENSION A POCHE = OPTIMIZATION AND IMPLEMENTATION OF A HIGH VOLTAGE PLANAR PERIPHERY POCKET TYPENgo, Le Thuy; Guillemot, Nadine.1997, 172 p.Thesis

New features of electrically detected magnetic resonance in silicon p-n diodesHORNMARK, E. T; LYON, S. A; POINDEXTER, E. H et al.Solid state communications. 2000, Vol 116, Num 5, pp 279-282, issn 0038-1098Article

The width of the non-steady state transition region in deep level impurity measurementsBROTHERTON, S. D.Solid-state electronics. 1983, Vol 26, Num 10, pp 987-990, issn 0038-1101Article

Effects of thermal annealing on interface states density and ideality factor in Ni/Si(111) Schottky diodesSAHAY, P. P; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1991, Vol 29, Num 5, pp 357-361, issn 0019-5596Article

Trace analysis of microvolume gas samples: dynamic considerations for analytical accuracyMUCHA, J. A.Analytical chemistry (Washington, DC). 1985, Vol 57, Num 9, pp 1963-1969, issn 0003-2700Article

Minority carrier lifetimes using compensated differential open circuit voltage decayGREEN, M. A.Solid-state electronics. 1983, Vol 26, Num 11, pp 1117-1122, issn 0038-1101Article

Superfast epitaxial: diffusional diodesPOTAPCHUK, V. A; MESHKOV, O. M.Russian electrical engineering. 1996, Vol 67, Num 12, pp 21-25, issn 1068-3712Article

Impédance d'une diode longue pour la double injection de porteurs modifiant peu la quasi-neutralitéBLOKHIN, I. K; KHOLODNOV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1761-1765, issn 0015-3222Article

EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article

CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article

  • Page / 17