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Results 1 to 25 of 42468

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Topographical, compositional and schottky characterization of PtSi/Si schottky diodesLI, M. C; ZHAO, L. C; LIU, D. G et al.Materials chemistry and physics. 2003, Vol 80, Num 3, pp 620-624, issn 0254-0584, 5 p.Article

Heteroisomeric diode: A solid state neutron detectorMCLLROY, D. N.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 18, pp V13-V14, issn 0953-8984Article

Gated transport in nanofluidic devicesXIAOZHONG JIN; ALURU, N. R.Microfluidics and nanofluidics (Print). 2011, Vol 11, Num 3, pp 297-306, issn 1613-4982, 10 p.Article

A model for energetic ion generation in an anode plasmaDUVALL, R. E; FRUCHTMAN, A; MARON, Y et al.Physics of fluids. B, Plasma physics. 1993, Vol 5, Num 9, pp 3399-3407, issn 0899-8221Article

Experiments in the generation of high-power ion beams in a plasma-filled diodeBYSTRITSKII, V. M; GRIGOR'EV, S. V; KHARLOV, A. V et al.Soviet physics. Technical physics. 1992, Vol 37, Num 12, pp 1211-1213, issn 0038-5662Article

Etude des dégradations dans les diodes électroluminescentes n GaAlAs/p GaAlAs par spectroscopie de photoluminescence = Photoluminescence spectroscopic study of degradation effects in n-GaAlAs/p-GaAlAs LED'sAjroudi, Mohammed; Fortini, A.1992, 70 p.Thesis

Etude de structures de déphaseurs analogiques potentiellement intégrables à 900MHzCoupez, Jean-Philippe; Perichon, R. A.1988, 174 p.Thesis

Lagrangian description of ion dynamical effects in plasma diodesSCHAMEL, H; BUJARBARUA, S.Physics of fluids. B, Plasma physics. 1993, Vol 5, Num 7, pp 2278-2285, issn 0899-8221, 1Article

Propriétés électrochimiques et photovoltaïques du poly(méthyl-3 thiophène) électrolytique sur films polycristallins de sulfure de cadmium = Electrochemical and photovoltaic properties of electrolytically grown poly(3-methyl thiophene) on polycrystalline cadmium sulfide thin filmsSene, Cheikh; Chartier, Pierre.1992, 160 p.Thesis

Etude du vieillissement de diodes électroluminescentes GaAs-GaAlAsMartin, Philippe; Allais, Gérard.1989, 89 p.Thesis

Complex dynamics observed in the noise spectrum of lateral coupled diode lasersLAMELA, H; SANTOS, R.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 660326.1-660326.6, issn 0277-786X, isbn 978-0-8194-6740-9, 1VolConference Paper

Etude de la formation de l'arc électrique dans le vide = The transition to the breakdown in high vacuumRAVARY, P; HAUG, R.Journal de physique. III (Print). 1994, Vol 4, Num 5, pp 967-981, issn 1155-4320Article

Analyse des bruits électriques et optiques des lasers à semiconducteur pour ll'émission à la longueur d'onde de 0,8 micromètreRaniriharinosy, Karyl; Orsal, Bernard; Alabedra, Robert et al.1988, 175 p.Thesis

Avalanche diodes as photon-counting detectors in astronomical photometryDRAVINS, Dainis; FARIA, Daniel; NILSSON, Bo et al.SPIE proceedings series. 2000, pp 298-307, isbn 0-8194-3633-X, 2VolConference Paper

Bruit de fond, phénomènes de relaxation électrique et fiabilité de composants actifs pour micro-ondes (diodes Schottky, MESFET et HEMT) = Excess noise, anomalous effects an reliability of high frequency devices (Schottky diodes, MESFET and HEMT)Reynoso-Hernandez, J. Apolinar; Graffeuil, Jacques.1989, 210 p.Thesis

Investigations of the multi-pulsed emission characteristics of velvetLIANSHENG XIA; KAIZHI ZHANG; JINSHUI SHI et al.Applied surface science. 2005, Vol 251, Num 1-4, pp 262-266, issn 0169-4332, 5 p.Conference Paper

Transit effects in a field-emission diodeSOLNTSEV, V. A.Journal of communications technology & electronics. 1998, Vol 43, Num 8, pp 946-951, issn 1064-2269Article

Arbitrary potential drops between collector and emitter in pure electron diodesKOLINSKY, H; SCHAMEL, H.Journal of plasma physics. 1997, Vol 57, pp 403-423, issn 0022-3778, 2Article

Cryogenic temperature measurementRUSBY, R. L; KEMPSON, M.Revue générale de thermique. 1996, Vol 35, Num 413, pp 338-343, issn 0035-3159Article

A spectroscopic investigation of the inter-electrode region in an open caesium plasma diodeOLSSON, E. R; SVENSSON, R; DAVIDSSON, J et al.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 3, pp 479-487, issn 0022-3727Article

Heavy Fullerene for Semi-Conducting Infrared Photo Diodes (1.5―5.0 μm)SHERSTNEV, V. V; CHARYKOV, N. A; SEMENOV, K. N et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2012, Vol 20, Num 1-8, pp 648-655, issn 1536-383X, 8 p.Article

Improved CuSCN―ZnO diode performance with spray deposited CuSCNHATCH, S. M; BRISCOE, J; DUNN, S et al.Thin solid films. 2013, Vol 531, pp 404-407, issn 0040-6090, 4 p.Article

Novel grating couplers for diode-bars multi-point side-pumping double-clad fiberZHANG FAN; WANG, Chun-Can; GENG RUI et al.Optics communications. 2007, Vol 279, Num 2, pp 346-355, issn 0030-4018, 10 p.Article

ELECTRA KrF LASER HIBACHI FOIL COOLING WITH NEAR-WALL JETSLU, B; ABDEL-KHALIK, S. I; SADOWSKI, D. L et al.Fusion science and technology. 2009, Vol 56, Num 1, pp 441-445, issn 1536-1055, 5 p.Conference Paper

Fabrication of a molecular self-assembled monolayer diode using nanoimprint lithography. Authors' replyWENYONG WANG; TAKHEE LEE; REED, Mark A et al.Nano letters (Print). 2004, Vol 4, Num 3, pp 533-535, issn 1530-6984, 2 p.Article

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