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Resonant interband tunnel diodesSWEENY, M; JINGMING XU.Applied physics letters. 1989, Vol 54, Num 6, pp 546-548, issn 0003-6951, 3 p.Article

Local analysis of extraordinary-mode stability properties for relativistic-non-neutral electron flow in a planar diodeDAVIDSON, R. C; UHM, H. S.Journal of plasma physics. 1987, Vol 37, Num 1, pp 63-79, issn 0022-3778Article

Double epitaxy improve single-photon avalanche diode performanceLACAITA, A; GHIONI, M; COVA, S et al.Electronics Letters. 1989, Vol 25, Num 13, pp 841-843, issn 0013-5194, 3 p.Article

Contribution à l'étude des dispositifs à jonction P-N en gamme millimétrique : application aux diodes avalanche en régime de génération directe et harmonique = Millimeter wave p-n jonction device study: application to avalanche diodes in direct an harmonic generation modeDALLE, Christophe; ROLLAND, Paul-Alain.1986, 218 pThesis

A modified conductance technique for the determination of series resistance of MIS tunnel diodesCHATTOPADHYAY, P; RAYCHAUDHURI, B.Solid-state electronics. 1991, Vol 34, Num 12, pp 1455-1456, issn 0038-1101Article

A tunable-frequency gunn diode fabricated by focused ion-beam implantationLEZEC, H. J; ISMAIL, K; MAHONEY, L. J et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 476-478, issn 0741-3106Article

Compensation of microwave properties of silicon double-drift read diode for high bias current operationPATI, S. P.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 352-356, issn 0268-1242Article

Caractéristiques de bruit dans les diodes de transit à avalanche, au siliciumGERSHENZON, E. M; LEVITES, A. A; SMETANIN, a. i et al.Radiotehnika i èlektronika. 1987, Vol 32, Num 12, pp 2623-2631, issn 0033-8494Article

High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillatorsHUBER, S; CLAASSEN, M; GROTHE, H et al.Electronics Letters. 1989, Vol 25, Num 13, pp 855-856, issn 0013-5194, 2 p.Article

Ionisation par chocs de niveaux profonds dans les diodes à temps de transit d'ionisation en avalanche (IMPATT) à base d'arséniure de galliumLUK'YANCHIKOVA, N. B.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 2, pp 332-337, issn 0015-3222Article

Schottky barrier diode on a submicron-thick silicon membrane using a dual surface fabrication techniqueLEE, K; SILCOX, J; LEE, C. A et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 4038-4040, issn 0021-8979Article

Correlation between electrical switching and photon emission in planar metal/insulator/metal diodesBISCHOFF, M; PAGNIA, H; WEYRICH, K et al.Thin solid films. 1986, Vol 139, Num 1, pp 25-32, issn 0040-6090Article

Influence des effets de transit sur les paramètres d'une diode redresseuse microonde avec une cathode à effet de champBASKIN, L. M; SAZONOV, E. A; CHERNYKH, L. M et al.Radiotehnika i èlektronika. 1988, Vol 33, Num 10, pp 2208-2210, issn 0033-8494Article

Denuded zone stability in a SPAD diode as a function of out-diffusion parametersPOGGI, A; REICHE, M; SUSI, E et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1496-1500, issn 0018-9383Article

Comparison of theoretical and experimental 60 GHz silicon impatt diode performanceBANERJEE, J. P; LUY, J. F; SCHAFFLER, F et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1049-1051, issn 0013-5194, 3 p.Article

High-power operation mode of pulsed IMPATT diodesBEHR, W; LUY, J. F.IEEE electron device letters. 1990, Vol 11, Num 5, pp 206-208, issn 0741-3106, 3 p.Article

Processing-induced conduction mechanisms in metal-insulator-semiconductor diodes on n-InPLEE, Y. S; ANDERSON, W. A.Journal of electronic materials. 1990, Vol 19, Num 6, pp 591-596, issn 0361-5235Article

Carrier lifetime measurement by ramp recovery of p-i-n diodesGAMAL, S. H; MOREL, H; CHANTE, J. P et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 8, pp 1921-1924, issn 0018-9383, 4 p.Article

Optimal design of a semiconductor heterostructure tunnel diode with linear current-voltage characteristicMAGRUDER, Kelly C; LEVI, A. F. J.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 44, Num 1, pp 322-326, issn 1386-9477, 5 p.Article

Arbitrary space charge to bulk boundary model of Auger recombination for semiconductor power diodesHENDERSON, I. A; MCGHEE, J.IEE proceedings. Part I. Solid-state and electron devices. 1986, Vol 133, Num 4, pp 169-173, issn 0143-7100, part 1Article

Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinksEISELE, H.Solid-state electronics. 1989, Vol 32, Num 3, pp 253-257, issn 0038-1101Article

Frequency chirp in W-band pulsed IMPATT oscillatorsRAY, U. C; GUPTA, A. K; SEN, M. N et al.International journal of infrared and millimeter waves. 1989, Vol 10, Num 10, pp 1223-1232, issn 0195-9271Article

Analysis fo a high-voltage merged p-i-n/Schottky (MPS) rectifierJAYANT BALIGA, B.IEEE electron device letters. 1987, Vol 8, Num 9, pp 407-409, issn 0741-3106Article

Consideration of velocity saturation in the design of GaAs varactor diodesCROWE, T. W; PEATMAN, W. C. B; ZIMMERMANN, R et al.ZIMMERMANN, R et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 6, pp 161-163, issn 1051-8207Article

Direct optical control of Impatt oscillatorsBISWAS, B. N; LAHIRI, P; MONDAL, D et al.Indian journal of pure & applied physics. 1993, Vol 31, Num 10, pp 709-717, issn 0019-5596Article

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