kw.\*:("Diodo barrera Schottky")
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Hydrogen sensitivity of Pt-Pd/p-CaFe2O4 diodeMATSUMOTO, Y; YOSHIKAWA, T; SATO, E et al.Materials research bulletin. 1989, Vol 24, Num 3, pp 331-342, issn 0025-5408Article
Electrical and photovoltaic properties of Ag/p-AgGaSe2 polycrystalline thin film Schottky barrier diodesSATYANARAYANA MURTHY, Y; MAHAMMAD HUSSAIN, O; UTHANNA, S et al.Physics letters. A. 1991, Vol 152, Num 5-6, pp 311-314, issn 0375-9601Article
Schottky barrier diode on a submicron-thick silicon membrane using a dual surface fabrication techniqueLEE, K; SILCOX, J; LEE, C. A et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 4038-4040, issn 0021-8979Article
A study of surface passivation on GaAs and In0.53Ga0.47 Schottky-barrier photodiodes using SiO2, Si3N4 and polyimideLEE, D. H; LI, S. S; LEE, S et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1695-1696, issn 0018-9383Article
Selective photoreceivers based on Schottky diodes with a periodically profiled surfaceBELYAKOV, L. V; GORYAYEV, D. N; RUMYANTSEV, B. L et al.Telecommunications & radio engineering. 1992, Vol 47, Num 10, pp 14-17, issn 0040-2508Article
High temperature Schottky diodes with boron-doped homoepitaxial diamond baseGILDENBLAT, G. S; GROT, S. A; HATFIELD, C. W et al.Materials research bulletin. 1990, Vol 25, Num 1, pp 129-134, issn 0025-5408Article
Comparison of GaN Schottky barrier and p-n junction photodiodesMAŁACHOWSKI, M; ROGALSKI, A.SPIE proceedings series. 1998, pp 206-213, isbn 0-8194-2726-8Conference Paper
Conduction mechanisms in Pd/SiO2/nSi Schottky diode hydrogen detectorsPETTY, M. C.Solid-state electronics. 1986, Vol 29, Num 1, pp 89-97, issn 0038-1101Article
Distribution of electron dark emission over Schottky-diodes Ag/p-InP surfaceBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1768-1771, issn 0033-8494Article
Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN templateMIYOSHI, M; KURAOKA, Y; ASAI, K et al.Electronics Letters. 2007, Vol 43, Num 17, pp 953-954, issn 0013-5194, 2 p.Article
A new vertical GaN schottky barrier diode with floating metal ring for high breakdown voltageLEE, Seung-Chul; HER, Jin-Cherl; KIM, Soo-Seong et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 319-322, isbn 4-88686-060-5, 4 p.Conference Paper
Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper
Effect of barrier inhomogeneities on heavily doped Au/n-GaAs Schottky diodesSHARMA, Rajinder; PADHA, Naresh; KRUPANIDHI, S. B et al.SPIE proceedings series. 2002, pp 931-935, isbn 0-8194-4500-2, 2VolConference Paper
Barrier inhomogeneities at Schottky contactsWERNER, J. H; GÜTTLER, H. H.Journal of applied physics. 1991, Vol 69, Num 3, pp 1522-1533, issn 0021-8979Article
The ammonia sensitivity of Pt/GaAs Schottky barrier diodesLECHUGA, L. M; CALLE, A; GOLMAYO, D et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3348-3354, issn 0021-8979Article
Polarization-sensitive surface plasmon Schottky detectorsJESTL, M; MARAN, I; KÖCK, A et al.Optics letters. 1989, Vol 14, Num 14, pp 719-721, issn 0146-9592Article
Surface plasma-enhanced internal photoemission in gallium arsenide Schottky diodesTOROSIAN, K. M; KARAKASHIAN, A. S; TENG, Y. Y et al.Applied optics. 1987, Vol 26, Num 13, pp 2650-2652, issn 0003-6935Article
High thermally induced index variations with short response time in InP/GaInAsP/ InP waveguide Schottky diodesSAADSAOUD, N; ZEGAOUI, M; DECOSTER, D et al.Electronics letters. 2009, Vol 45, Num 15, pp 802-803, issn 0013-5194, 2 p.Article
Double Schottky diode-type gas sensor for discriminative detection of phosphine and hydrogenTODA, K; SHIMIZU, T; SANEMASA, I et al.Analytical sciences. 1995, Vol 11, Num 2, pp 317-318, issn 0910-6340Article
Conduction mechanisms in erbium silicide Schottky diodesUNEWISSE, M. H; STOREY, J. W. V.Journal of applied physics. 1993, Vol 73, Num 8, pp 3873-3879, issn 0021-8979Article
Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardmentCARR, B. A; FRIEDLAND, E; MALHERBE, J. B et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4775-4777, issn 0021-8979Article
Al/Si(100) Schottky barrier formation using nozzle jet beam depositionWONG, J; MEI, S.-N; LU, T.-M et al.Applied physics letters. 1987, Vol 50, Num 11, pp 679-681, issn 0003-6951Article
Barrier height of titanium silicide Scholttky barrier diodesKIKUCHI, A.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp L894-L895, issn 0021-4922Article
Characterization of Au-n-InP schottky diodes by EBICPERANSIN, J. M; DA SILVA, B. E. F; BRESSE, J. F et al.Physica status solidi. A. Applied research. 1986, Vol 94, Num 2, pp 713-718, issn 0031-8965Article
n+-n Silicon-trans(CH)x Schottky diodeABD-LEFDIL, M; ROLLAND, M; CADENE, M et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 2, pp K171-K174, issn 0031-8965Article