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Results 1 to 25 of 369

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Observations of a bifurcation in a rf driven semiconductor laser using an electronic simulatorYAO HUANG KAO; CHAO HUNG TSAI; CHING SHEU WANG et al.Review of scientific instruments. 1992, Vol 63, Num 1, pp 75-79, issn 0034-6748Conference Paper

Turn-on jitter in semiconductor lasers with moderate reflecting feedbackHUOY-JONG WU; HUNG-CHUN CHANG.IEEE photonics technology letters. 1992, Vol 4, Num 4, pp 339-341Article

Modelling the static property of carrier density variation in directly modulated lasersMUHAMMAD TAHER ABUELMA'ATTI.International journal of infrared and millimeter waves. 1989, Vol 10, Num 1, pp 63-71, issn 0195-9271, 9 p.Article

Direct modulation and optical confinement factor modulation of semiconductor lasersFROMMER, A; LURYI, S; NICHOLS, D. T et al.Fiber and integrated optics. 1996, Vol 15, Num 2, pp 81-88, issn 0146-8030Article

Comportement dynamique des lasers semiconducteurs en régime de modulation directe = Dynamic response of directly modulated semiconductor lasersHEMERY, E; LOURTIOZ, J.-M.Revue de physique appliquée. 1987, Vol 22, Num 11, pp 1571-1580, issn 0035-1687Article

The «Inverted» gain-levered semiconductor laser―Direct modulation with enhanced frequency modulation and suppressed intensity modulationLAU, K. Y.IEEE Photonics technology letters. 1991, Vol 3, Num 8, pp 703-705Article

Microwave phase stability of directly modulated semiconductor injection lasersLAU, K. Y.Applied physics letters. 1988, Vol 52, Num 17, pp 1377-1378, issn 0003-6951Article

Hot carrier effects on the second-order harmonic distortion of directly-modulated semiconductor lasers : A theoretical investigationTSAI, Chin-Yi; WU, T.-Y; CHEN, C.-H et al.SPIE proceedings series. 1998, pp 337-345, isbn 0-8194-2874-4Conference Paper

Instability threshold resonances in directly modulated external-cavity semiconductor lasersSCHREMER, A; FUJITA, T; LIN, C. F et al.Applied physics letters. 1988, Vol 52, Num 4, pp 263-265, issn 0003-6951Article

25 Gbaud/s 4-PAM (50 Gbit/s) modulation and 10 km SMF transmission with 1.3 μm InGaAIAs-based DMLKOBAYASHI, W; FUJISAWA, T; KANAZAWA, S et al.Electronics letters. 2014, Vol 50, Num 4, pp 299-300, issn 0013-5194, 2 p.Article

Optically coherent direct modulated FM analog link with phase noise canceling circuitTAYLOR, R; FORREST, S.Journal of lightwave technology. 1999, Vol 17, Num 4, pp 556-563, issn 0733-8724Article

High-speed direct modulation of semiconductor lasersSPENCER, R. M; GREENBERG, J; EASTMAN, L. F et al.International journal of high speed electronics and systems. 1997, Vol 8, Num 3, pp 417-456Article

Persistent properties of period doubling in directly modulated semiconductor lasersYAO HUANG KAO; HUNG TSER LIN.Physical review. A. 1993, Vol 48, Num 3, pp 2292-2298, issn 1050-2947, AArticle

Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laserWEI SHI; FARAJI, Behnam; GREENBERG, Mark et al.Optical and quantum electronics. 2011, Vol 42, Num 11-13, pp 659-666, issn 0306-8919, 8 p.Conference Paper

Extended modulation bandwidth of DBR and external cavity lasers by utilizing a cavity resonance for equalizationMORTHIER, Geert; SCHATZ, Richard; KJEBON, Olle et al.IEEE journal of quantum electronics. 2000, Vol 36, Num 12, pp 1468-1475, issn 0018-9197Article

Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixingNEWKIRK, M. A; VAHALA, K. J.Applied physics letters. 1988, Vol 52, Num 10, pp 770-772, issn 0003-6951Article

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGalnAs MQW distributed-reflector lasersMATSUDA, M; SIMOYAMA, T; UETAKE, A et al.Electronics letters. 2012, Vol 48, Num 8, pp 450-452, issn 0013-5194, 3 p.Article

Optically injection-locked photonic crystal laser with >67 GHz modulation bandwidthCHEN, C.-H; TAKEDA, K; SHINYA, A et al.Electronics letters. 2011, Vol 47, Num 22, pp 1240-1241, issn 0013-5194, 2 p.Article

On spread spectrum modulation techniques applied in IEEE 802.11 wireless LAN standardBOSKOVIC, Branimir; MARKOVIC, Milan.EUROCOMM 2000. Conference. 2000, pp 238-241, isbn 0-7803-6323-XConference Paper

High average power short-pulse generation from singlemode InGaAs/GaAs laser diodesRAFAILOV, E. U; BIRKIN, D. J. L; AVRUTIN, E. A et al.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 1, pp 51-54, issn 1350-2433Article

15-17 Gbit/s direct modulation of ultrahigh speed compressively strained well VUG SIBH DFB laserMATHOORASING, D.Electronics Letters. 1993, Vol 29, Num 9, pp 771-772, issn 0013-5194Article

Effect of low-frequency intensity noise on high-frequency direct modulation of semiconductor injection lasersLAU, K. Y; BLAUVELT, H.Applied physics letters. 1988, Vol 52, Num 9, pp 694-696, issn 0003-6951Article

Short Pulse Generation Using Chirp ControlAIXU ZHANG; JINLONG YU; HAO HU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 678311.1-678311.5, issn 0277-786X, isbn 978-0-8194-6946-5Conference Paper

25 Gbit/s operation of InGaAs-based VCSELsSUZUKI, N; HATAKEYAMA, H; FUKATSU, K et al.Electronics Letters. 2006, Vol 42, Num 17, pp 975-976, issn 0013-5194, 2 p.Article

A high performance C-band subharmonic modulator exploiting branch-line couplers as input/output portsD'ORAZIO, A; LIUZZI, N. C; DI ALESSIO, F. L et al.Journal of electromagnetic waves and applications. 2006, Vol 20, Num 4, pp 489-503, issn 0920-5071, 15 p.Article

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