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Growth behavior and microstructure of ZnO epilayer on γ-LiAlO₂(100) substrate by chemical vapor depositionLIUWEN CHANG; CHOU, Mitch M. C; HWANG, Teng-Hsing et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 2, pp 215-219, issn 1862-6300, 5 p.Conference Paper

Relaxation plastique d'un film mince par émission de dislocations filantes visBONNET, Roland; YOUSSEF, Sami; NEILY, Salem et al.Comptes rendus. Physique. 2008, Vol 9, Num 2, pp 276-282, issn 1631-0705, 7 p.Article

HCl defect revelation in 200mm SiGe virtual substrates: A systematic studyHARTMANN, J. M; ABBADIE, A.Thin solid films. 2014, Vol 557, pp 110-114, issn 0040-6090, 5 p.Conference Paper

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition : Indium Nitride and Related AlloysMIN HWA KIM; DAE YOUNG MOON; PARK, Jinsub et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 50-55, issn 1862-6300, 6 p.Article

Critical assessment of birefringence imaging of dislocations in 6H silicon carbideLE THI MAI HOA; OUISSE, T; CHAUSSENDE, D et al.Journal of crystal growth. 2012, Vol 354, Num 1, pp 202-207, issn 0022-0248, 6 p.Article

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Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBEYUXIN SONG; SHUMIN WANG; XIAOHUI CAO et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 21-25, issn 0022-0248, 5 p.Conference Paper

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Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray TopographyYAMAGUCHI, Hirotaka; MATSUHATA, Hirofumi.Journal of electronic materials. 2010, Vol 39, Num 6, pp 715-718, issn 0361-5235, 4 p.Conference Paper

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPETÖRMÄ, P. T; ALI, M; SVENSK, O et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4911-4915, issn 0921-4526, 5 p.Conference Paper

The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowthCHANG, Ching-I; LAI, Yen-Lin; LIU, Chuan-Pu et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 2-3, pp 420-424, issn 0022-3697, 5 p.Conference Paper

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H-SiC Epitaxial LayersMYERS-WARD, R. L; MAHADIK, N. A; WHEELER, V. D et al.Crystal growth & design. 2014, Vol 14, Num 11, pp 5331-5338, issn 1528-7483, 8 p.Article

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Epitaxial Graphene Nucleation on C-Face Silicon CarbideHITE, Jennifer K; TWIGG, Mark E; TEDESCO, Joseph L et al.Nano letters (Print). 2011, Vol 11, Num 3, pp 1190-1194, issn 1530-6984, 5 p.Article

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