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Light emission excited by hot electrons in MgF2 thin-film devicesSHU, Q. Q; ZU, Z. R; LU, J. W et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6193-6195, issn 0021-8979, 3 p.Article

SnO2 based sensors of smokeBRYNZARI, V; DMITRIEV, S; KOROTCHENKOV, G et al.International conference on microelectronic. 1997, pp 547-550, isbn 0-7803-3664-X, 2VolConference Paper

Thin-film microprobe with bilayer lipid membrane for advanced pH-meterTVAROZEK, V; OTTOVA-LEITMANNOVA, A; NOVOTNY, I et al.International conference on microelectronic. 1997, pp 543-546, isbn 0-7803-3664-X, 2VolConference Paper

Thin film electroluminescent displays produced by atomic layersSUTELA, T.Displays. 1984, Vol 5, Num 2, pp 73-78, issn 0141-9382Article

Humidity sensing properties of (Ba, Sr) TiO3 thin films grown by hydrothermal-electrochemical methodAGARWAL, Seema; ROY, Somnath C; SHARMA, G. L et al.SPIE proceedings series. 2002, pp 527-529, isbn 0-8194-4500-2, 2VolConference Paper

Measuring on thin film electroluminescent devicesMÜLLER, G. O; MACH, R; SELLE, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 657-669, issn 0031-8965Article

Electromagnetic field analysis of film transformerMIDORIKAWA, Y; MARINOVA, I; HAYANO, S et al.IEEE transactions on magnetics. 1995, Vol 31, Num 3, pp 1456-1459, issn 0018-9464, 1Conference Paper

A computationally simple model for hysteretic thin-film electroluminescent devicesJAREM, J. M; SINGH, V. P.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1834-1841, issn 0018-9383, 1Article

Percolating cermet thin-film thermistors between 50 mk-300 K and 0-20 TGERSHENFELD, N. A; VANCLEVE, J. E; WEBB, W. W et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4760-4762, issn 0021-8979Article

Effect of surface states of WO3 on the operating characteristics of thin film electrochromic devicesYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Thin solid films. 1983, Vol 101, Num 2, pp 141-151, issn 0040-6090Article

Woven piezoelectric structure for stretchable energy harvesterYUN, D; YUN, K.-S.Electronics letters. 2013, Vol 49, Num 1, pp 65-66, issn 0013-5194, 2 p.Article

Closed-form solutions for voltage pulse response of open, shorted, and loaded distributed RC thin film structureEL-SHENNAWY, K. M; FIANI, G. P; TAYEL, M. B et al.IEEE transactions on circuits and systems. 1991, Vol 38, Num 12, pp 1567-1571, issn 0098-4094Article

Broad band emission behaviors in ZnS thin film electroluminescent devicesNAKANO, R; MATSUMOTO, H; ENDO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2103-L2104, issn 0021-4922, part 2Article

Thermal decay of signal and noise in high-density thin-film mediaYUN ZHANG; BERTRAM, H. N.IEEE transactions on magnetics. 1999, Vol 35, Num 5, pp 4326-4338, issn 0018-9464, 3Article

THEORIE DES DOMAINES MAGNETIQUES CYLINDRIQUES TRAVERSANT OU NE TRAVERSANT PAS LES DISPOSITIFS MINCES MULTICOUCHESRED'KO VG; SKOBELIN GV.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 143-150; BIBL. 11 REF.Article

Grating amplitude effect on electroluminescence enhancement of corrugated organic light-emitting devicesZHANG, Xu-Lin; JING FENG; SONG, Jun-Feng et al.Optics letters. 2011, Vol 36, Num 19, pp 3915-3917, issn 0146-9592, 3 p.Article

Memristive and Resistive Devices and SystemsCHEN, D. M; CHUA, L. O; HWANG, C. S et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, issn 0947-8396, 274 p.Serial Issue

The U.S. Army workshop on advanced active thin films for meso-micro scale applications, Destin, Florida, May 10-12, 2005COLE, M. W; NOTHWANG, W. D; CARMAN, G. P et al.Ferroelectrics (Print). 2006, Vol 342, issn 0015-0193, 257 p.Conference Proceedings

ZnO thin film sensors for detecting dimethyl- and trimethyl-amine vaporsROY, S; BASU, S.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 5, pp 321-326, issn 0957-4522, 6 p.Article

PVSEC 11 - Part IFUYUKI, Takashi; SAITOH, Tadashi.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, issn 0927-0248, 633 p.Conference Proceedings

A gas pressure sensor based on ZrO2 thin films for use at high temperaturesKHAN, M. A; GONDAL, M. A; KHAWAJA, E. E et al.International journal of electronics. 2000, Vol 87, Num 2, pp 227-234, issn 0020-7217Article

A biased percolation model for the analysis of electronic-device degradationGINGL, Z; PENNETTA, C; KISS, L. B et al.International conference on microelectronic. 1997, pp 651-654, isbn 0-7803-3664-X, 2VolConference Paper

Thin film optical technology in integrated optic device fabricationSTALLARD, M. M; COLE, R. A; MORRIS, F et al.Optics and laser technology. 1988, Vol 20, Num 4, pp 185-188, issn 0030-3992Article

Adressage d'écrans matriciels électroluminescents = Addressing of electroluminescent matrix screensPECILE, D; MENN, R; TUETA, R et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 127-131, issn 0035-1687Article

International Workshop on Semiconductor Gas Sensors ― SGS'2006Thin solid films. 2007, Vol 515, Num 23, pp 8302-8363, issn 0040-6090, 61 p.Conference Paper

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