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Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings

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A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article

Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article

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Sampling analysis in the DPM rangeWURNIK, F.Microelectronics and reliability. 1990, Vol 30, Num 1, pp 35-38, issn 0026-2714Article

Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growthYOO, H.-J; HAYES, J. R; CANEAU, C et al.Electronics Letters. 1989, Vol 25, Num 3, pp 191-192, issn 0013-5194, 2 p.Article

MOS flat-band capacitance method at low temperaturesHUANG, C. -L; GILDENBLAT, G. S.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1434-1439, issn 0018-9383, 6 p.Article

High temperature metallisation for GaAs device processingMORGAN, D. V; THOMAS, H; ANDERSON, W. T et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 531-536, issn 0031-8965Article

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Motorola Workshop on Computational Mterials and ElectronicsPhysica status solidi. B. Basic research. 2001, Vol 226, Num 1, pp 1-255, issn 0370-1972, 241 p.Conference Proceedings

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Study on Bi-CMOS devices utilising SIMOX technologyMATSUMOTO, S; OHNO, T; IZUMI, K et al.Electronics Letters. 1989, Vol 25, Num 14, pp 904-905, issn 0013-5194, 2 p.Article

Commutateur de puissance dans la gamme des microsecondes ― le dynistor à enclenchement réversibleGREKHOV, I. V; GORBATYUK, A. V; KOSTINA, L. S et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 9, pp 1822-1826, issn 0044-4642Article

Industry-compatible applications for visible laser energy in semiconductor productionRICHARDSON, T. R; BOOGAARD, J.Solid state technology. 1982, Vol 25, Num 3, pp 102-104, issn 0038-111XArticle