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Results 1 to 25 of 1965

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Light emission excited by hot electrons in MgF2 thin-film devicesSHU, Q. Q; ZU, Z. R; LU, J. W et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6193-6195, issn 0021-8979, 3 p.Article

Measuring on thin film electroluminescent devicesMÜLLER, G. O; MACH, R; SELLE, B et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 657-669, issn 0031-8965Article

A computationally simple model for hysteretic thin-film electroluminescent devicesJAREM, J. M; SINGH, V. P.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1834-1841, issn 0018-9383, 1Article

Percolating cermet thin-film thermistors between 50 mk-300 K and 0-20 TGERSHENFELD, N. A; VANCLEVE, J. E; WEBB, W. W et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4760-4762, issn 0021-8979Article

Broad band emission behaviors in ZnS thin film electroluminescent devicesNAKANO, R; MATSUMOTO, H; ENDO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2103-L2104, issn 0021-4922, part 2Article

Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devicesABU-DAYAH, A; KOBAYASHI, S; WAGER, W. F et al.Applied physics letters. 1993, Vol 62, Num 7, pp 744-746, issn 0003-6951Article

Extraction de la lumière hors d'un guide d'ondes à 4 couches sur un support en matériau quelconque et avec deux limites gaufréesATAYA, B. A; OSOVITSKIJ, A. N.Optika i spektroskopiâ. 1989, Vol 66, Num 4, pp 879-884, issn 0030-4034Article

Memristive and Resistive Devices and SystemsCHEN, D. M; CHUA, L. O; HWANG, C. S et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, issn 0947-8396, 274 p.Serial Issue

The U.S. Army workshop on advanced active thin films for meso-micro scale applications, Destin, Florida, May 10-12, 2005COLE, M. W; NOTHWANG, W. D; CARMAN, G. P et al.Ferroelectrics (Print). 2006, Vol 342, issn 0015-0193, 257 p.Conference Proceedings

PVSEC 11 - Part IFUYUKI, Takashi; SAITOH, Tadashi.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, issn 0927-0248, 633 p.Conference Proceedings

A biased percolation model for the analysis of electronic-device degradationGINGL, Z; PENNETTA, C; KISS, L. B et al.International conference on microelectronic. 1997, pp 651-654, isbn 0-7803-3664-X, 2VolConference Paper

Thin film optical technology in integrated optic device fabricationSTALLARD, M. M; COLE, R. A; MORRIS, F et al.Optics and laser technology. 1988, Vol 20, Num 4, pp 185-188, issn 0030-3992Article

EMRS 2012 Symposium LSPIGA, Sabina; MULLER, Christophe; COWBURN, Russell et al.Thin solid films. 2013, Vol 533, issn 0040-6090, 100 p.Conference Proceedings

Le diamant, composant electronique du XXIe siecle ? = The diamond, electronic component for the XXI century ?DORIGNAC, D.Ingénieurs de l'automobile (Paris). 1998, Num 720, pp 46-53, issn 0020-1200Conference Paper

Excitation efficiency in thin-film electroluminescent devices : proble layer measurementsBENOIT, J; BARTHOU, C; BENALLOUL, P et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1435-1442, issn 0021-8979Article

Electroluminescence in Li-codoped ZnS: TmF3 thin-film devicesSOHN, S. H; HYUN, D. G; YAMADA, A et al.Applied physics letters. 1993, Vol 62, Num 9, pp 991-993, issn 0003-6951Article

On the excitatory efficiency in ZnS:Mn thin-film electroluminescent devicesZEINERT, A; BENALLOUL, P; BENOIT, J et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2855-2862, issn 0021-8979Article

Detection of 9.4 GHz ultrasonic waves using a thin-film CdS bolometerRAMPTON, V. W; NEWTON, M. I.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 11, pp 1572-1575, issn 0022-3727Article

Proceedings on Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference, Strasbourg, FranceDENNLER, G; JAËGER-WALDAU, A; KROON, J et al.Thin solid films. 2008, Vol 516, Num 20, issn 0040-6090, 556 p.Conference Proceedings

Application space influences: Electronic ceramic materialsREYNOLDS, Thomas G.American Ceramic Society bulletin. 2001, Vol 80, Num 10, pp 29-33, issn 0002-7812Article

Use of ion beams to decompose metalorganics into patterned thin-film superconductorsMANTESE, J. V; CATALAN, A. B; HAMDI, A. H et al.Applied physics letters. 1988, Vol 52, Num 20, pp 1741-1742, issn 0003-6951Article

Film transflect polarizerAGABEKOV, V; IVANOVA, N; SHAHAB, S et al.SPIE proceedings series. 2001, pp 141-143, isbn 0-8194-4226-7Conference Paper

Invasion noise in nanoparticle WO3/Au thin film devicesHOEL, A; EDMTH, J; HESZLER, P et al.SPIE proceedings series. 2001, pp 229-235, isbn 0-8194-4320-4Conference Paper

Electroluminescence in ZnS1-xTex : CeF3 thin-film devicesSOHN, S. H; HYUN, D. G; DEGUCHI, K et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 4092-4094, issn 0021-8979Article

Study of the effects of aging on the relaxation luminance in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devicesMORTON, D. C; KOH, J; HOGH, C. P et al.Applied physics letters. 1993, Vol 63, Num 7, pp 863-865, issn 0003-6951Article

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