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Neues Leistungs- und Energiemessverfahren mit Hall-Generator = Nouvelles techniques de mesure de la puissance et de l'énergie à l'aide de dispositif à effet Hall = New techniques for measuring power and energy by using Hall-effect devicesVOSS, J; GEIS, K.ETZ-Archiv. 1988, Vol 10, Num 5, pp 165-167, issn 0170-1703Article

High-performances Hall sensors based on III-V heterostructuresMOSSER, V; ABOULHOUDA, S; DENIS, J et al.Sensors and actuators. A, Physical. 1994, Vol 42, Num 1-3, pp 450-454, issn 0924-4247Conference Paper

Transducer measures power in single operationEDWARDS, M.Engineering materials and design (1972). 1990, Vol 10, Num 2, pp 50-51, issn 0308-6917, 2 p.Article

Precise m/e monitoring in a magnetically scanned mass spectrometer by using two Hall probesHALAS, S; SIKORA, J.Journal of physics. E. Scientific instruments. 1987, Vol 20, Num 6, pp 662-664, issn 0022-3735, part 1Article

Etude expérimentale des phénomènes de décharge et propagation d'ondes dans les propulseurs ioniues à dérive d'électrons en cycle fermé = Expermimental Study of Physical Phenomena and Waves Propagation in the Ion Closed-Electron Drift ThrustersGuerrini, Gilles; Bacal, Martha.1997, 174 p.Thesis

Effects of contact geometry in wide Hall barsJOU, H; TSANG, W; KRIMAN, A. M et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 585-588, issn 0169-4332Conference Paper

Rrflection of ballistic electrons by diffusive two-dimensional contactsGEIM, A. K; MAIN, P. C; TABORYSKI, R et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1005-1009, issn 0038-1101Conference Paper

Piezoresistive effect in vertical Hall cellMAENAKA, K.Electronics Letters. 1993, Vol 29, Num 4, pp 381-382, issn 0013-5194Article

De Ferraris à Hall : un nouveau compteur d'énergie électriqueFALK.Revue générale de l'électricité (Paris). 1990, Num 3, pp 71-74, issn 0035-3116, 4 p.Article

Nonlinearity in Hall devices and its compensationPOPOVIC, R. S; HALG, B.Solid-state electronics. 1988, Vol 31, Num 12, pp 1681-1688, issn 0038-1101Article

Comparison of quantum Hall effect resistance standards of the BNM/LCIE and the BIPMDELAHAYE, F; WITT, T. J; PIQUEMAL, F et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 258-261, issn 0018-9456Conference Paper

Flicker noise and offset suppression in symmetric Hall platesSTOESSEL, Z; RESCH, M.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 449-452, issn 0924-4247Conference Paper

Comparative mobility degradation in modulation-doped GaAs devices after e-beam and x-ray irradiationGHANBARI, R. A; BURKHARDT, M; ANTONIADIS, D. A et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2890-2892, issn 1071-1023Conference Paper

Multi-dimensional detection of magnetic fields using CMOS integrated sensorsPARANJAPE, M; RISTIC, L.IEEE transactions on magnetics. 1991, Vol 27, Num 6, pp 4843-4845, issn 0018-9464, 2Article

Removal of Hall sensor offset to achieve stable spindle-motor loop in a CD systemLIN, Chi-Cheng S; WANG, Wai W; TUNG, Shun-Yi et al.SPIE proceedings series. 2000, pp 46-49, isbn 0-8194-3720-4Conference Paper

AC measurements of the quantized Hall resistanceHARTLAND, A; KIBBLE, B. P; RODGERS, P. J et al.IEEE transactions on instrumentation and measurement. 1995, Vol 44, Num 2, pp 245-248, issn 0018-9456Conference Paper

Development of an in situ Hall-effects sensor for on-line monitoring of thickness and compaction during composite curingSALIBA, T. E; HOFMANN, D; SMOLINSKI, P et al.Composites science and technology. 1994, Vol 51, Num 1, pp 1-9, issn 0266-3538Article

InSb films for magnetic sensorsOHSHITA, M.Sensors and actuators. A, Physical. 1994, Vol 40, Num 2, pp 131-134, issn 0924-4247Conference Paper

A 3-D vertical Hall magnetic-field sensor in CMOS technologyPARANJAPE, M; FILANOVSKY, I; RISTIC, L et al.Sensors and actuators. A, Physical. 1992, Vol 34, Num 1, pp 9-14, issn 0924-4247Conference Paper

A microprocessor-based system for adaptable calibration and linearization of Hall-effect position sensorsKONDRASKE, G. V; RAMASWAMY, R.IEEE transactions on instrumentation and measurement. 1986, Vol 35, Num 3, pp 338-343, issn 0018-9456Article

The thermomagnetic carrier transport equationNATHAN, A; MANKU, T.Sensors and actuators. A, Physical. 1993, Vol 36, Num 3, pp 193-197, issn 0924-4247Article

Basic Study on Superconducting Magnetic Bearing (SMB) With Superconducting CoilMARUO, Eiji; KOMORI, Mochimitsu; ASAMI, Ken-Ichi et al.IEEE transactions on applied superconductivity. 2012, Vol 22, Num 3, issn 1051-8223, 5201704.1-5201704.4Conference Paper

CMOS 2D Hall microsensor with minimal design complexityROUMENIN, Ch. S; LOZANOVA, S. V.Electronics Letters. 2007, Vol 43, Num 9, pp 511-513, issn 0013-5194, 3 p.Article

Theory and experimental validation of a new analytical model for the position-dependent hall voltage in devices with arbitrary aspect ratioRUDAN, Massimo; REGGIANI, Susanna; GROOS, Gerhard et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 2, pp 314-322, issn 0018-9383, 9 p.Article

Study of magnetic sensors for pulsed eddy current techniquesTIAN, G. Y; SOPHIAN, A.Insight (Northampton). 2005, Vol 47, Num 5, pp 277-279, issn 1354-2575, 3 p.Article

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