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Efficiency and resolution of a new readout system for electro-optical devicesDUNHAM, M. E.Review of scientific instruments. 1989, Vol 60, Num 9, pp 2915-2919, issn 0034-6748, 5 p.Article

The optoelectronic technology of gallium nitride: the 2002 Benjamin Franklin medal in engineering presented to Shuji NakamuraAKSELRAD, Aline.Journal of the Franklin Institute. 2003, Vol 340, Num 3-4, pp 249-261, issn 0016-0032, 13 p.Article

Infrared and photoelectronic imagers and detector devices : 31 July-1 August 2005, San Diego, California, USALONGSHORE, Randolph E.SPIE proceedings series. 2005, isbn 0-8194-5886-4, isbn 0-8194-5886-4Conference Proceedings

30 Hz-linewidth, diode-laser-pumped, Nd: GGG nonplanar ring oscillators by active frequency stabilisationDAY, T; NILSSON, A. C; FEJER, M. M et al.Electronics Letters. 1989, Vol 25, Num 13, pp 810-812, issn 0013-5194, 3 p.Article

Physics and applications of optoelectronic devices (Philadelphia PA, 25-26 October 2004)Piprek, Joachim.SPIE proceedings series. 2004, isbn 0-8194-5547-4, VII, 200 p, isbn 0-8194-5547-4Conference Proceedings

Novel nonlinear optical polymer opto-electronic devicesGROTE, J. G; DRUMMOND, J. P.SPIE proceedings series. 1998, pp 326-330, isbn 0-8194-2949-XConference Paper

High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structureTWYNAM, J. K; CLAXTON, P. A; WOODS, R. C et al.Electronics Letters. 1989, Vol 25, Num 2, pp 85-86, issn 0013-5194, 2 p.Article

Optoelectronics and Communications Conference (OECC2007)SHIKADA, Minoru.IEICE transactions on communications. 2008, Vol 91, Num 7, pp 2144-2177, issn 0916-8516, 33 p.Conference Paper

Four quadrant photo-detector with ultra high common mode rejection ratio and ultra narrow gapPISANI, Marco.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 51-52Conference Paper

AlGaAs schottky reflection modulator and detector for Gbit/s optical transmission systemsPRANK, U; KOWALSKY, W; HACKBARTH, T et al.Electronics Letters. 1989, Vol 25, Num 13, pp 847-849, issn 0013-5194, 3 p.Article

Optische Sortierung und Klassierung mit dem Rhewum Datasort = Optical sorting and classification with the Rhewum Datasort = Triage et classement optique par le Datasort RhewumSCHÜTZ, Sigurd; COPPERS, Matthias.AT. Aufbereitungs-Technik (1990). 2003, Vol 44, Num 10, pp 32-37, issn 1434-9302, 6 p.Article

Analysis of anomalous I-V characteristics of silicon p+-n-n+ photodiodes fabricated by boron implant through SiO2 layersSILARD, A. P.International journal of electronics. 1989, Vol 66, Num 2, pp 247-261, issn 0020-7217, 15 p.Article

Semiconductor photodetectors II (San Jose CA, 25-26 January 2005)Cohen, Marshall J; Dereniak, Eustace L.SPIE proceedings series. 2005, isbn 0-8194-5700-0, IX, 170 p, isbn 0-8194-5700-0Conference Proceedings

Gallium nitride optoelectronic substrates for biological sensingMUTH, John F.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 292-293Conference Paper

Characteristics of 1.3-μm InGaAsP lasers used as photodetectorsVAN DER ZIEL, J. P.Journal of lightwave technology. 1989, Vol 7, Num 2, pp 347-352, issn 0733-8724, 6 p.Article

Microwave functions enabled by photonicsESMAN, R. D.OMW : interactions between microwaves and optics. International summer school. 2000, pp 89-100, isbn 2-910986-25-XConference Paper

Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode patternKOSCIELNIAK, W. C; PELOUARD, J. L; LITTLEJOHN, M. A et al.Applied physics letters. 1989, Vol 54, Num 6, pp 567-569, issn 0003-6951, 3 p.Article

High-performance Al0.15Ga0.85As/In0.53Ga0.47As MSM photodetectors grown by OMCVDWON-PYO HONG; GEE-KUNG CHANG; RAJARAM BHAT et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 659-662, issn 0018-9383, 4 p.Article

Light-emitting diodes (research, manufacturing, and applications XII)Streubel, Klaus P; Jeon, Heonsu.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7085-0, 1Vol, various pagings, isbn 978-0-8194-7085-0Conference Proceedings

OLEDs for lightingBOERNER, Herbert.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61920U.1-61920U.10, issn 0277-786X, isbn 0-8194-6248-9, 1VolConference Paper

The effect of processes on the reliability of GaN based Light Emitting diodesZHIGUO XIAO; XIAOGUANG HE; MA, Kevin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63550K.1-63550K.9, issn 0277-786X, isbn 0-8194-6450-3, 1VolConference Paper

Photodetection with silicon pyramidal microdischarge devicesOSTROM, Nels P; EDEN, J. Gary.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 154-155Conference Paper

High-contrast top-emitting OLEDs for OLED displaysYANG, Chih-Jen; LIN, Chun-Liang; WU, Chung-Chih et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 186-187Conference Paper

High-speed quantum well optoelectronic gate based on diffusive conduction recoveryYAIRI, M. B; COLDREN, C. W; MILLER, D. A. B et al.SPIE proceedings series. 1998, pp 10-13, isbn 0-8194-2949-XConference Paper

Optoelectronic dynamic random access memory cell utilizing a three-terminal N-channel self-aligned double-heterostructure optoelectronic switchTAYLOR, G. W; CRAWFORD, D. L; SIMMONS, J. G et al.Applied physics letters. 1989, Vol 54, Num 6, pp 543-545, issn 0003-6951, 3 p.Article

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