Thermal performance and microstructure of lead versus lead-free solder die attach interface in power device packagesSTINSON-BAGBY, Kelly; HUFF, Dan; KATSIS, Dimos et al.Electronics recycling summitIEEE international symposium on electronics and the environment (ISEE). 2004, pp 27-32, isbn 0-7803-8250-1, 1Vol, 6 p.Conference Paper

An analysis of the dynamic behavior of field-limiting ring-passivation systemsJOHNSON, M. K; ANNIS, A. D; SANDOE, J. N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1203-1211, issn 0018-9383, 9 p.Article

Simulation of a neural node using SET technologyVAN DE HAAR, Rudie; HOEKSTRA, Jaap.Lecture notes in computer science. 2003, pp 377-386, issn 0302-9743, isbn 3-540-00730-X, 10 p.Conference Paper

5th International Seminar on Power SemiconductorsBENDA, Vitezslav; CHARITAT, Georges; STOJADINOVIC, Ninoslav et al.Microelectronics journal. 2001, Vol 32, Num 5-6, issn 0959-8324, 153 p.Serial Issue

Charged for successJEHOULET, Christophe; GREEN, Anthony.Power engineering international. 2002, Vol 10, Num 6, pp 63-67, issn 1069-4994, 3 p.Article

Analysis of screw pitch effects on the performance of bolt-clamped Langevin-type transducersADACHI, Kazunari; TAKAHASHI, Toru; HASEGAWA, Hiroshi et al.The Journal of the Acoustical Society of America. 2004, Vol 116, Num 3, pp 1544-1548, issn 0001-4966, 5 p.Article

Thermal investigation of high power optical devices by transient testingFARKAS, Gdbor; VAN VOORST VADER, Quint; POPPE, Andras et al.International workshop on thermal investigations of ICs and systems. 2003, pp 213-218, isbn 2-84813-020-2, 1Vol, 6 p.Conference Paper

Integration of power devices in advanced mixed signal analog BiCMOS technologyEFLAND, T. R.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 409-418, issn 0959-8324Article

Transistors bipolaires et dispositifs intégrés à transistors de puissanceSHABOYAN, S. A; VARDANYAN, A. A; TATEVOSYAN, R. G et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 30-33, issn 0013-5860Article

Trends in diffusion-length measurements in the original and dielectrically isolated-tub μ-silicon as a function of processingBURK, D. E; CHUNG, B. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 750-760, issn 0018-9383, 11 p.Article

Recent Advances in Power Semiconductor DevicesIEE proceedings. Circuits, devices and systems. 2001, Vol 148, Num 2, issn 1350-2409, 56 p.Conference Proceedings

Recent advances in insulated tate bipolar transistor technologyHAMZA YILMAZ; KING OWYANG; CHANG, M. F et al.IEEE transactions on industry applications. 1990, Vol 26, Num 5, pp 831-834, issn 0093-9994, 4 p.Conference Paper

Power-constrained device and technology design for the end of scalingFRANK, David J.IEDm : international electron devices meeting. 2002, pp 643-646, isbn 0-7803-7462-2, 4 p.Conference Paper

A novel metal field plate edge termination for power devicesSUBHAS CHANDRA BOSE, J. V; DE SOUZA, M. M; SANKARA NARAYANAN, E. M et al.Microelectronics journal. 2001, Vol 32, Num 4, pp 323-326, issn 0959-8324Article

Electro-thermal networks for the analysis of power devicesCODECASA, Lorenzo; D'AMORE, Dario; MAFFEZZONI, Paolo et al.THERMINIC 2000. International workshopBudapest University of Technology and Economics. 2000, pp 131-136, isbn 2-913329-51-9Conference Paper

Low loss and high speed IGBT gate driver using the reverse current limiting technique of diode recovery for a hard switching inverterJUNG, Y.-C; CHO, G.-H.International journal of electronics. 1996, Vol 81, Num 3, pp 321-336, issn 0020-7217Article

Semiconductor devices and converters produced by The Elektrovypryamitel Joint Stock CompanyYUTLANDOV, YU. D; CHIBIRKIN, V. V; SHESTOPEROV, G. N et al.Russian electrical engineering. 1996, Vol 67, Num 4, pp 21-24, issn 1068-3712Article

Power semiconductor devices: an overviewHOWER, P. L.Proceedings of the IEEE. 1988, Vol 76, Num 4, pp 335-342, issn 0018-9219Article

Statischer HF-Umrichter mit Leistungs-MOSFET = Convertisseur de fréquence HF à MOSFET de puissance = HF frequency converter with power MOSFETMOUHAMED HASSAN; PASCHKE, H.Elektrowärme international. Edition B, Industrielle Elektrowärme. 1987, Vol 45, Num 6, pp 274-279, issn 0340-3521Article

Study on methane HCCI combustion process of micro free-piston power deviceJIN BAI; QIAN WANG; ZHIXIA HE et al.Applied thermal engineering. 2014, Vol 73, Num 1, pp 1066-1075, issn 1359-4311, 10 p.Article

Minimum radiation force target size for power measurements in focused ultrasonic fields with circular symmetryBEISSNER, K.The Journal of the Acoustical Society of America. 2010, Vol 128, Num 6, pp 3355-3362, issn 0001-4966, 8 p.Article

Semiconductors in high temperature applications: a future trend in automotive industryGOROLL, Michael; PUFALL, Reinhard; KANERT, Werner et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1413-1417, issn 0026-2714, 5 p.Conference Paper

A new generation of power lateral and vertical floating islands MOS structuresMORANCHO, F; CEZAC, N; GALADI, A et al.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 509-516, issn 0959-8324Article

Driving electric field effects on piezoelectric transducersTAKAHASHI, S; SASAKI, Y; HIROSE, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 5B, pp 3010-3015, issn 0021-4922, 1Conference Paper

Experimental and numerical analysis of GTO's snuberless turn-off operationsKHATIR, Z; LARGUIER, P; SEBILLE, D et al.Microelectronics journal. 1996, Vol 27, Num 2-3, pp 231-241, issn 0959-8324Article