Submicron trenching of semiconductor nanostructuresLEE, K. Y; SMITH, T. P; FORD, C. J. B et al.Applied physics letters. 1989, Vol 55, Num 7, pp 625-627, issn 0003-6951, 3 p.Article

Review of analytical models for the study of highly doped regions of silicon devicesCUEVAS, A; BALBUENA, M. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 553-560, issn 0018-9383, 8 p.Article

Selected Papers from ISDRS 2011AKTURK, Akin; ILIADIS, Agis A.Solid-state electronics. 2012, Vol 78, issn 0038-1101, 169 p.Conference Proceedings

A design model for surface-termination optimization of off-state semiconductor devicesWADDELL, J. B; MIDDLETON, J; BOARD, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 943-953, issn 0018-9383, 11 p.Article

Analytical two-dimensional model for minority-carrier diffusion from small-geometry pn junctionSTROLLO, A. G. M; SPIRITO, P.Electronics Letters. 1989, Vol 25, Num 2, pp 130-131, issn 0013-5194, 2 p.Article

Nonpolar and Semipolar Group III Nitride-Based MaterialsSPECK, J. S; CHICHIBU, S. F.MRS bulletin. 2009, Vol 34, Num 5, issn 0883-7694, [49 p.]Serial Issue

Noise in devices and circuits II (Maspalomas, 26-28 May 2004)Danneville, François; Bonani, Fabrizio; Deen, M. Jamal et al.SPIE proceedings series. 2004, isbn 0-8194-5396-X, XXXI, 588 p, isbn 0-8194-5396-XConference Proceedings

High-rare deposition of hydrogenated amorphous silicon films and devicesLUFT, W.Applied physics communications. 1988, Vol 8, Num 4, pp 239-298, issn 0277-9374Article

Improved radiation hardness of mos devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processingLO, G. Q; SHIH, D. K; TING, W. C et al.Electronics Letters. 1989, Vol 25, Num 13, pp 812-813, issn 0013-5194, 2 p.Article

Room-temperature operation of AIGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxySCHNELL, R. D; TEWS, H; NEUMANN, R et al.Electronics Letters. 1989, Vol 25, Num 13, pp 830-831, issn 0013-5194, 2 p.Article

Device dependence of charging effects from high-current ion implantationFELCH, S. B; BASRA, V. K; MCKENNA, C. M et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2338-2342, issn 0018-9383Article

Recent progress in power electronic devicesIKEDA, Y; YATSUO, T.Hitachi review. 1987, Vol 36, Num 1, pp 5-12, issn 0018-277XArticle

International Symposium on Semiconductor ManufactoringIEEE transactions on semiconductor manufacturing. 2007, Vol 20, Num 3, pp 195-277, issn 0894-6507, 82 p.Conference Paper

Integration of conducting polymer micro- and nano- actuators with semiconductor photonic devicesBERDICHEVSKY, Yevgeny; LO, Y.-H.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 507-508Conference Paper

IEEE Lester Eastman conference on high performance devices (Newark DE, 6-8 August 2002)Leoni, Robert E.IEEE Lester Eastman conference on high performance devices. 2002, isbn 0-7803-7478-9, XIII, 508 p, isbn 0-7803-7478-9Conference Proceedings

A phenomenological model of switching in metal-thin insulator-semiconductor devices: a development of the analogy with the thyristorCHOI, W. K; DE LIMA, J. J; OWEN, A. E et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 2102-2110, issn 0021-8979, 9 p.Article

Four logic states using two resonant tunnelling diodesVAN HOOF, C; GENOE, J; VAN HOVE, M et al.Electronics Letters. 1989, Vol 25, Num 4, pp 259-260, issn 0013-5194, 2 p.Article

Modeling of microwave semiconductor devices using simulated annealing optimizationMAN-KUAN VAI; PRASAD, S; LI, N. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 761-762, issn 0018-9383, 2 p.Article

Si-gate CMOS devices on a Si lateral solid-phase epitaxial layerHIRASHITA, N; KATOH, T; ONODA, H et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 548-552, issn 0018-9383, 5 p.Article

Electron-beam-controlled high-power semiconductor switchesSHOENBACH, K. H; LAKDAWALA, V. K; STOUDT, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1793-1802, issn 0018-9383, 10 p., 1Article

MOS device modeling at 77 KSELBERHERR, S.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1464-1474, issn 0018-9383, 11 p.Article

Study on Bi-CMOS devices utilising SIMOX technologyMATSUMOTO, S; OHNO, T; IZUMI, K et al.Electronics Letters. 1989, Vol 25, Num 14, pp 904-905, issn 0013-5194, 2 p.Article

High-voltage and high-current automatic crowbarCLIFFE, R. J; BROWN, J; SMITH, I. R et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 11, pp 1740-1742, issn 0022-3727Article

Sampling analysis in the DPM rangeWURNIK, F.Microelectronics and reliability. 1990, Vol 30, Num 1, pp 35-38, issn 0026-2714Article

Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growthYOO, H.-J; HAYES, J. R; CANEAU, C et al.Electronics Letters. 1989, Vol 25, Num 3, pp 191-192, issn 0013-5194, 2 p.Article