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Results 1 to 25 of 2295

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On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stressKUAN-YU FU; PYLE, R. E.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2151-2159, issn 0018-9383Article

On the behaviour of insulations with interfaces in medium voltage cable accessories-model investigationsLAMBRECHT, J; PILLING, J; BARSCH, R et al.IEE conference publication. 1999, pp 4.14.S17-4.17.S17, issn 0537-9989, isbn 0-85296-719-5Conference Paper

n-Channel MOSFET breakdown characteristics and modeling for p-well technologiesBEITMAN, B. A.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1935-1941, issn 0018-9383, 1Article

Temperature acceleration of time-dependent dielectric breakdownREZA MOAZZAMI; LEE, J. C; CHENMING HU et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2462-2465, issn 0018-9383, 4 p., 1Article

Reduced ground bounce and improved latch-up suppression through substrate conductionGABARA, T.IEEE journal of solid-state circuits. 1988, Vol 23, Num 5, pp 1224-1232, issn 0018-9200Article

Major disruptions of low aspect ratio tokamak plasmas caused by thermal instabilityROBERTS, D. E; DE VILLIERS, J. A. M; FLETCHER, J. D et al.Nuclear fusion. 1986, Vol 26, Num 6, pp 785-796, issn 0029-5515Article

Etude de la disruption électrique de l'oxyde de tantale non cristallinLALEHKO, V. A; SHMIDT, T. V.Fizika tverdogo tela. 1989, Vol 31, Num 2, pp 187-192, issn 0367-3294Article

Electrical breakdown of solid dielectricsROZHKOV, V. M.Russian electrical engineering. 2000, Vol 71, Num 3, pp 56-60, issn 1068-3712Article

Layout dependence of CMOS latchupMENOZZI, R; SELMI, L; SANGIORGI, E et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1892-1901, issn 0018-9383, 1Article

Etude de la disruption interne dans le tokamak T-10BOBROVSKIJ, G. A; ESIPCHUK, YU. V; SAVRUKHIN, P. V et al.Fizika plazmy (Moskva, 1975). 1987, Vol 13, Num 10, pp 1155-1164, issn 0134-5052Article

Punchthrough in a Josephson junction: mechanical analogBLACKBURN, J. A; ZHOU-JING YANG; VIK, S et al.Physics letters. A. 1986, Vol 114, Num 8-9, pp 500-502, issn 0375-9601Article

An automated reverse-bias second-breakdown transistor testerBERNING, D.Journal of research of the National Institute of Standards and Technology. 1991, Vol 96, Num 3, pp 291-304, issn 1044-677XArticle

Capacitance of p-n junctions under electrical breakdownNATARAJAN, K; RAMKUMAR, K; SATYAM, M et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 2, pp K269-K272, issn 0031-8965Article

High-temperature latchup characteristics in VLSI CMOS circuitsSHOUCAIR, F. S.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2424-2426, issn 0018-9383Article

Improved self-discharge characteristics of the electric double layer capacitorSUZUKI, T; KATSU, K; OKAMOTO, K et al.NEC research & development. 1986, Num 82, pp 118-123, issn 0547-051XArticle

Influence of the discharge pyhenomena in radiationcharged glasses upon composition of gas emissionAKISHIN, A. I; ANDREEV, A. A; BONDARENKO, A. B et al.Fizika i himiâ obrabotki materialov. 1991, Num 2, pp 75-78, issn 0015-3214, 4 p.Article

Photoneutron production accompanying plasma disruptions in JETJARVIS, O. N; SADLER, G; THOMPSON, J. L et al.Nuclear fusion. 1988, Vol 28, Num 11, pp 1981-1993, issn 0029-5515Article

Defekte Kunstharz-Beschichtung in einer Produktionshalle = Défectuosité dans un hall de production, de la couche synthétique de revêtement du solFF. Fussboden-Forum. 1987, Num 4, issn 0342-7269, 76Article

The effect of insulating sheets (barriers) in various gaps : The study of AC breakdown voltages and barrier factorsSEBO, S. A; KAHLER, J; HUTCHINS, S et al.IEE conference publication. 1999, pp 3.144.P3-3.147.P3, issn 0537-9989, isbn 0-85296-719-5Conference Paper

The dielectric breakdown characteristics of MOS capacitor of Cz-Si waferFURUKAWA, J; SHIOTA, T; KIDA, M et al.SPIE proceedings series. 1997, pp 342-349, isbn 0-8194-2765-9Conference Paper

Impurity influx model of fast tokamak disruptionsWARD, D. J; WESSON, J. A.Nuclear fusion. 1992, Vol 32, Num 7, pp 1117-1123, issn 0029-5515Article

Theory of dielectric breakdown in metal-loaded dielectricsBEALE, P. D; DUXBURY, P. M.Physical review. B, Condensed matter. 1988, Vol 37, Num 6, pp 2785-2791, issn 0163-1829Article

Influence de la structure de la céramique sur les essais de surtension d'isolateurs de lignesZUBEKHINA, S. N; KOLKER, D. G.Steklo i keramika. 1988, Num 5, pp 22-24, issn 0131-9582Article

Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effectsHEBERT, F; ROULSTON, D. J.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 11, pp 2323-2328, issn 0018-9383Article

Suppression of prebreakdown current by a cathode coating of siliconSMITH, J. N. JR.Journal of applied physics. 1986, Vol 60, Num 4, pp 1490-1492, issn 0021-8979Article

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