Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Dopage cristal")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 825

  • Page / 33
Export

Selection :

  • and

SIMS quantification of low concentration of nitrogen doped in silicon crystalsFUJIYAMA, N; KAREN, A; SAMS, D. B et al.Applied surface science. 2003, Vol 203-04, pp 457-460, issn 0169-4332, 4 p.Conference Paper

Calorimetric study of the diastereomeric interactions of enantiomeric iso-octyl-benzoyloxybenzoate solutes with a chiral liquid crystalK.YAROVOY, Y; PATEL, V; LABES, M. M et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1998, Vol 319, pp 101-109, issn 1058-725XArticle

Phases of the 2D Hubbard model at low dopingCHUBUKOV, A. V; MUSAELIAN, K. A.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 11, pp L153-L158, issn 0953-8984Article

The doping dependence of magnetic ordering in the t-J model with classical spinsHAMADA, M; SHIMAHARA, H; MORI, H et al.Physica. B, Condensed matter. 1995, Vol 206-07, pp 688-690, issn 0921-4526Conference Paper

Aspects structuraux et électriques de l'implantation ionique de bore dans des couches de diamant = Structural and electrical aspects of the ion implantation of boron in diamond layersFontaine, Frédéric; Deneuville, A.1994, 198 p.Thesis

European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors, June 1-4, 1999, Strasbourg, FranceMESLI, A; SCHRÖTER, W; WEBER, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, issn 0921-5107, 345 p.Conference Proceedings

Enhanced diffusion of dopants at concentrations near the solubility limitANTONCIK, E.Journal of the Electrochemical Society. 1994, Vol 141, Num 12, pp 3593-3595, issn 0013-4651Article

A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high-voltage applicationsJOB, R; ULYASHIN, A. G; FAHRNER, W. R et al.SPIE proceedings series. 2002, pp 405-413, isbn 0-8194-4500-2, 2VolConference Paper

Effect of doping on the properties of oxidized single-crystal siliconBERDZENISHVILI, K. S; DARSAVELIDZE, G. Sh; GABRICHIDZE, L. L et al.Inorganic materials. 1997, Vol 33, Num 11, pp 1098-1099, issn 0020-1685Article

Study of low energy plasma ion implanted hydrogen in GaAsSOM, T; DHAR, S; KULKARNI, V. N et al.Radiation physics and chemistry (1993). 1998, Vol 51, Num 4-6, issn 0969-806X, p. 683Conference Paper

Some correlations between the thermodynamic and transport properties of high Tc oxides in the normal stateCOOPER, J. R; LORAM, J. W.Journal de physique. I. 1996, Vol 6, Num 12, pp 2237-2263, issn 1155-4304Article

Doping dependence of second harmonic generation from native oxide/Si(111) interfacesHIRAYAMA, H; WATANABE, K; KAWADA, M et al.Applied surface science. 1996, Vol 100-01, pp 460-464, issn 0169-4332Conference Paper

Doping of phosphorus and boron into silicon by solid-phase diffusion at low temperatures (<650°C)ISHIKAWA, Y; SUGIOKA, K.Japanese journal of applied physics. 1995, Vol 34, Num 1A, pp L82-L84, issn 0021-4922, 2Article

Spin and hole dynamics of high-Tc cuprates and their interconditional evolution with doping from antiferromagnetic to 'strange metal' stateONUFRIEVA, F; ROSSAT-MIGNOD, J; KUSHNIR, V. P et al.Physica. B, Condensed matter. 1995, Vol 206-07, pp 667-671, issn 0921-4526Conference Paper

Evidence for delocalization in high purity n-type InPBENZAQUEN, M; WALSH, D.Solid state communications. 1994, Vol 89, Num 12, pp 1033-1036, issn 0038-1098Article

Low-temperature Si epitaxy by photochemical vapor deposition with SiH2Cl2OSHIMA, T; ALONSO, J. C; YAMADA, A et al.Japanese journal of applied physics. 1994, Vol 33, Num 2A, pp L153-L155, issn 0021-4922, 2Article

Corrélations magnétiques et propriétés des quasiparticules dans un système des électrons corrélés = Magnetic correlations and quasiparticle properties in a correlated electron systemZhou, Ching; Heinz, S.1994, 167 p.Thesis

Magnetic excitations of a doped two-dimensional antiferromagnetSHERMAN, A; SCHREIBER, M.Physical review. B, Condensed matter. 1993, Vol 48, Num 10, pp 7492-7498, issn 0163-1829Article

An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) siliconSHYH-HORNG YANG; MORRIS, S. J; LIM, D. L et al.Journal of electronic materials. 1994, Vol 23, Num 8, pp 801-808, issn 0361-5235Article

Boron incorporation effects in CVD diamond film growthPOLO, M. C; CIFRE, J; ESTEVE, J et al.Vacuum. 1994, Vol 45, Num 10-11, pp 1013-1014, issn 0042-207XConference Paper

The homogeneity of the photonuclear transmutation doping of siliconZABLOTSKIY, V. V; IVANOV, N. A; LEONOV, N. N et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2187-2192, issn 0268-1242Article

Zinc-containing silica films: a spin-on diffusion source for zinc in InPSCHADE, U; UNGER, B.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2048-2052, issn 0268-1242Article

Inteplay of holon and spinon dynamics in doped anisotropic Heisenberg chainsCABRERA, G. G; MONTENEGRO, M; MILLAN, C et al.Solid state communications. 1993, Vol 88, Num 1, pp 33-37, issn 0038-1098Article

Simultaneous segregation and shape control in crystal pulling with a nonwetted floatMING-HSIEN LIN; SINDO KOU.Journal of crystal growth. 1993, Vol 134, Num 3-4, pp 287-292, issn 0022-0248Article

Ingap state in doped and undoped cupratesMAEKAWA, S; OHTA, Y; TSUTSUI, K et al.The Journal of physics and chemistry of solids. 1993, Vol 54, Num 10, pp 1085-1092, issn 0022-3697Conference Paper

  • Page / 33