Modulation-doped field-effect transistor based on a two-dimensional hole gasSTORMER, H. L; BALDWIN, K; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1062-1064, issn 0003-6951Article

Lateral photovoltage as a probe of MODFET channel disorderANAGNOSTAKIS, E. A.Physica status solidi. B. Basic research. 1992, Vol 172, Num 2, pp K61-K63, issn 0370-1972Article

Piezoreflectance characterization of resonant tunnelin and modulation-doped heterostructuresTOBER, R. L; PAMULAPATI, J; BHATTACHARYA, P. K et al.Journal of electronic materials. 1989, Vol 18, Num 3, pp 379-384, issn 0361-5235, 6 p.Article

Encoding electronic properties by synthesis of axial modulation- doped silicon nanowiresCHEN YANG; ZHAOHUI ZHONG; LIEBER, Charles M et al.Science (Washington, D.C.). 2005, Vol 310, Num 5752, pp 1304-1307, issn 0036-8075, 4 p.Article

Etude expérimentale des propriétés de transport électronique au voisinage d'une hétérojonction par photoconductionRousseau, Michel; Laval, Suzanne.1989, 297 p.Thesis

Optoelectronic nanoheterointerface functional eigenstate photodynamicsANAGNOSTAKIS, E. A.Physica. B, Condensed matter. 2010, Vol 405, Num 1, pp 38-40, issn 0921-4526, 3 p.Article

HEMT modelling using semi-physical expressions for the equilibrium space-charge parameters of the modulation-doped heterojunctionRAMAKRISHNA, S; KARMALKAR, S.IEE proceedings. Circuits, devices and systems. 1999, Vol 146, Num 4, pp 211-214, issn 1350-2409Article

Si/SiGe modulation doped field-effect transistor with two electron channelsKONIG, U; SCHAFFLER, F.Electronics Letters. 1991, Vol 27, Num 16, pp 1405-1407, issn 0013-5194Article

Density dependence of intersubband transitions in a modulation-doped quantum wellJUSSERAND, B; BRUM, J. A; GARDIN, D et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 4220-4223, issn 0163-1829, 4 p.Article

New quantum dot transistorMOKEROV, V. G; FEDOROV, Yu. V; VELIKOVSKI, L. E et al.SPIE proceedings series. 2002, pp 273-277, isbn 0-8194-4500-2, 2VolConference Paper

Isotype heterojunctions with flat valence or conduction bandBABIC, D. I; DÖHLER, G. H; BOWERS, J. E et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2195-2198, issn 0018-9197Article

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasersMAXIMOV, M. V; SHERNYAKOV, Yu M; ZUBOV, F. I et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105016.1-105016.5Article

Stochastic assembly of sublithographic nanoscale interfacesDEHON, André; LINCOLN, Patrick; SAVAGE, John E et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 3, pp 165-174, issn 1536-125X, 10 p.Article

Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxyISHIDA, A; MATSUDA, K; CHU, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 59, Num 1-3, pp 230-234, issn 0921-5107Conference Paper

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)LIU, R.-C; LIU, W.-C.Microelectronics and reliability. 1998, Vol 38, Num 3, pp 367-372, issn 0026-2714Article

Carrier mobilities in modulation doped Si_1-xGe_x heterostructures with respect to FET applicationsHÖCK, G; GLÜCK, M; HACKBARTH, T et al.Thin solid films. 1998, Vol 336, Num 1-2, pp 141-144, issn 0040-6090Conference Paper

Modulation-doped multi-quantum well (MD-MQW) lasers. II, ExperimentUOMI, K; MISHIMA, T; CHINONE, N et al.Japanese journal of applied physics. 1990, Vol 29, Num 1, pp 88-94, issn 0021-4922, 1Article

Collapse of ferromagnetism in (Ga, Mn)As at high hole concentrationsCHO, Y. J; LIU, X; FURDYNA, J. K et al.Semiconductor science and technology. 2008, Vol 23, Num 12, issn 0268-1242, 125010.1-125010.5Article

Growth of nanowire superiattice structures for nanoscale photonics and electronicsGUDIKSEN, Mark S; LAUHON, Llncoln J; WANG, Jianfang et al.Nature (London). 2002, Vol 415, Num 6872, pp 617-620, issn 0028-0836Article

Modulation-doped silicate glass deposited by low-pressure chemical vapor depositionILG, M; KRAXENBERGER, M; URAM, K et al.Superlattices and microstructures. 1998, Vol 24, Num 5, pp 385-388, issn 0749-6036Article

Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor depositionGRUDOWSKI, P. A; EITING, C. J; DUPUIS, R. D et al.Journal of crystal growth. 1998, Vol 189-90, pp 103-108, issn 0022-0248Conference Paper

Theory of plasmon-assisted electron pairing in semiconductorsBLANK, R; HAUG, H.Physica status solidi. B. Basic research. 1995, Vol 188, Num 1, pp 105-123, issn 0370-1972Conference Paper

Spectral linewidth and linewidth enhancement factor in 1.5-μm modulation-doped strained multiple-quantum-well lasersMAWATARI, H; KANO, F; YAMAMOTO, N et al.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 811-814, issn 0021-4922, 1Conference Paper

Raman scattering on modulation-doped quantum wells : intrinsic spin splitting of the GaAs conduction bandJUSSERAND, B; RICHARDS, D; PERIC, H et al.Surface science. 1994, Vol 305, Num 1-3, pp 247-250, issn 0039-6028Conference Paper

Self-consistent simulation of Stark shift of intersubband transition in modulation-doped step quantum wellsHUANG, F. Y; LI, J; LIE-MING LI et al.Applied physics letters. 1993, Vol 63, Num 12, pp 1669-1671, issn 0003-6951Article