Chemical nature of N-ions incorporated into epitaxial ZnO films : Semiconductor Surfaces and Interfaces in Materials ScienceHOFFMANN, Patrick; PETTENKOFER, Christian.Physica status solidi. B. Basic research. 2011, Vol 248, Num 2, pp 327-333, issn 0370-1972, 7 p.Article

Tuning doping site and type by strain: Enhanced p-type doping in Li doped ZnOJUNYI ZHU; WEI, Su-Huai.Solid state communications. 2011, Vol 151, Num 20, pp 1437-1439, issn 0038-1098, 3 p.Article

Lattice location of the group V elements As and Sb in ZnOWAHL, U; CORREIA, J. G; DECOSTER, S et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4803-4806, issn 0921-4526, 4 p.Conference Paper

Trivalent dopants on ZnO semiconductor obtained by mechanical millingDAMONTE, L. C; DONDERIS, V; HERNANDEZ-FENOLLOSA, M. A et al.Journal of alloys and compounds. 2009, Vol 483, Num 1-2, pp 442-444, issn 0925-8388, 3 p.Conference Paper

Sb-treatment effect of GaAs substrate on Sb-doped Cd_1-xMn_xTe growth by MOVPEGOTO, Hideo; TAHASHI, Masahiro; IDO, Toshiyuki et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 5, pp 1691-1693, issn 0370-1972, 3 p.Conference Paper

Defect reactions in gallium antimonide studied by zinc and self-diffusionSUNDER, Kirsten; BRACHT, Hartmut.Physica. B, Condensed matter. 2007, Vol 401-02, pp 262-265, issn 0921-4526, 4 p.Conference Paper

Optical and transport properties of chromium-doped CdSe and CdS_0.67Se_0.33 crystalsKASIYAN, V; DASHEVSKY, Z; SHNECK, R et al.Journal of crystal growth. 2006, Vol 290, Num 1, pp 50-55, issn 0022-0248, 6 p.Article

(Ga, Mn, N) compounds growth with mass-analyzed low energy dual ion beam depositionFUQIANG ZHANG; NUOFU CHEN; XIANGLIN LIU et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 202-207, issn 0022-0248, 6 p.Article

Effects of Zn doping on intermixing in InGaAs/AlGaAs laser diode structuresBUDA, M; HAY, J; TAN, H. H et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 8, pp G481-G487, issn 0013-4651Article

Hydrogen-ion implantation in GaAsGAWLIK, G; RATAJCZAK, R; TUROS, A et al.Vacuum. 2001, Vol 63, Num 4, pp 697-700, issn 0042-207XConference Paper

Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C-SiC layers in siliconLINDNER, J. K. N; WENZEL, S; STRITZKER, B et al.Applied surface science. 2001, Vol 184, Num 1-4, pp 299-306, issn 0169-4332Conference Paper

Structural changes induced by fast nitrogen ions in GaAs single crystalsZYMIERSKA, D; AULEYTNER, J; CHOINSKI, J et al.Journal of alloys and compounds. 2001, Vol 328, Num 1-2, pp 112-118, issn 0925-8388Conference Paper

Writing cobalt FIB implantation into 6H:SiCBISCHOFF, L; TEICHERT, J.Applied surface science. 2001, Vol 184, Num 1-4, pp 336-339, issn 0169-4332Conference Paper

Structure of gallium arsenide implanted with argon ionsPITIRIMOV, A. V; PITIRIMOVA, E. A; KHOHLOV, A. F et al.Fizika i himiâ obrabotki materialov. 2000, Num 2, pp 23-26, issn 0015-3214Article

CONTRIBUTIONS A L'ETUDE DES INTERACTIONS HYDROGENE-IMPURETES DANS LES SEMI-CONDUCTEURS II-VI = HYDROGEN-IMPURITIES INTERACTIONS IN II-VI SEMICONDUCTORSPelletier, Herve; Theys, Bertrand.2000, 150 p.Thesis

Contribution à l'étude des défauts introduits par implantation ionique dans HgCdTe = Study of ion implantation defects in HgCdTeLeveque, Patrick; Declemy, Alain.1998, 174 p.Thesis

Study of low energy plasma ion implanted hydrogen in GaAsSOM, T; DHAR, S; KULKARNI, V. N et al.Radiation physics and chemistry (1993). 1998, Vol 51, Num 4-6, issn 0969-806X, p. 683Conference Paper

Proton implantation induced damage to heavily doped n-GaAs as envisaged by charge deep-level transient spectroscopyTHURZO, I; PINCIK, E; CICMANEC, P et al.Physica status solidi. A. Applied research. 1997, Vol 162, Num 2, pp 547-557, issn 0031-8965Article

Lattice defects in ion implanted GaAsPASHOV, N; VITALI, G; KALITZOVA, M et al.Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 239-245, issn 0031-8965Article

Damage formed by Si⁺ implantation in GaAsHARA, T; MURAKI, T; TAKEDA, S et al.Japanese journal of applied physics. 1994, Vol 33, Num 10B, pp L1435-L1437, issn 0021-4922, 2Article

Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSbDOERSCHEL, J.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 142-146, issn 0921-5107Conference Paper

A preliminary study of the formation of WSi₂ by high-current W ion implantationZHU, D. H; LU, H. B; TAO, K et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 31, pp 5505-5512, issn 0953-8984Article

Carbon δ-doping in GaAs by metal-organic molecular beam epitaxyYAMADA, T; SHIRAHAMA, M; TOKUMITSU, E et al.Japanese journal of applied physics. 1993, Vol 32, Num 8B, pp L1123-L1125, issn 0021-4922, 2Article

Defect reduction by MeV ion implantation for shallow junction formationSAITO, S; KUMAGAI, M; KONDO, T et al.Applied physics letters. 1993, Vol 63, Num 2, pp 197-199, issn 0003-6951Article

Diffusion modeling of ion implanted boron in Si during RTA : correlation of extended defect formation and annealing with the enhanced diffusion of boronKINOSHITA, H; LO, G. Q; KWONG, D. L et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 1, pp 248-252, issn 0013-4651Article