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First-principles modeling of the interactions of iron impurities with graphene and graphiteBOUKHVALOV, Danil W.Physica status solidi. B. Basic research. 2011, Vol 248, Num 6, pp 1347-1351, issn 0370-1972, 5 p.Article

XAFS studies of nickel-doped lead tellurideRADISAVLJEVIC, Ivana; NOVAKOVIC, Nikola; IVANOVIC, Nenad et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5032-5034, issn 0921-4526, 3 p.Conference Paper

Dynamics of implanted muons at low temperatures in white tinSOLT, G; ZIMMERMANN, U; HERLACH, D et al.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3351-3353, issn 0921-4526, 3 p.Article

Comparison of off-axis and in-line electron holography as quantitative dopant-profiling techniquesTWITCHETT, A. C; DUNIN-BORKOWSKI, R. E; MIDGLEY, P. A et al.Philosophical magazine (2003. Print). 2006, Vol 86, Num 36, pp 5805-5823, issn 1478-6435, 19 p.Article

Study of sodium and silver phosphate glasses doped with some metal chloridesDAS, S. S; SRIVASTAVA, Vibha.Progress in crystal growth and characterization of materials. 2006, Vol 52, Num 1-2, pp 125-131, issn 0960-8974, 7 p.Conference Paper

Characteristics of 6H-silicon carbide PIN diodes prototyping by laser dopingTIAN, Z; QUICK, N. R; KAR, A et al.Journal of electronic materials. 2005, Vol 34, Num 4, pp 430-438, issn 0361-5235, 9 p.Article

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Development of an interatomic potential for phosphorus impurities in α-ironACKLAND, G. J; MENDELEV, M. I; SROLOVITZ, D. J et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 27, pp 2629-2642, issn 0953-8984, 14 p.Article

Fabrication of silicon carbide thin films by plasma immersion ion implantation with self-ignited glow dischargeZHENGHUA AN; FU, Ricky K. Y; PENG CHENA et al.Thin solid films. 2004, Vol 447-48, pp 153-157, issn 0040-6090, 5 p.Conference Paper

CEMS investigations of AISI M2 steel after ion implantation by nitrogen, boron and carbonKHOLMETSKII, A. L; ANISCHIK, V. M; UGLOV, V. V et al.Vacuum. 2003, Vol 69, Num 4, pp 521-527, issn 0042-207X, 7 p.Article

Doping of bromine into carbon materials with different heat-treatment temperaturesTAKAHASHI, Yoichi; YOSHIKAWA, Yasuko; AKUZAWA, Noboru et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2003, Vol 111, Num 1, pp 42-46, issn 0914-5400, 5 p.Article

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Structure-dependent solvent and ion intercalation in reduced and oxidized nickel hexacyanoferratesQIUMING YU; STEEN, William A; JEERAGE, Kavita M et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 6, pp E195-E203, issn 0013-4651Article

Influence of proton implantation on optical absorption of rutileLU, Tie-Cheng; LIN, Li-Bin; WU, Shao-Yi et al.Surface & coatings technology. 2002, Vol 158-59, pp 431-435, issn 0257-8972Conference Paper

An investigation on the lattice distortion in urea and KCl doped KDP single crystals by X-ray diffraction studiesPODDER, J; RAMALINGOM, S; NARAYANA KALKURA, S et al.Crystal research and technology (1979). 2001, Vol 36, Num 6, pp 549-556, issn 0232-1300Article

Depth profile and annealing behavior study of 350 keV Bi⁺ ions implanted into LiNbO₃FENG CHEN; HUI HU; ZHANG, Jian-Hua et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 86, Num 1, pp 15-19, issn 0921-5107Article

New interpretation of C-V measurements for determining the concentration profile in a semiconductorYAREMCHUK, A. F.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 4, pp 503-509, issn 0947-8396Article

Structural changes of boron carbide induced by Zr incorporationLIU, C. H; HUANG, C.Journal of materials science. 2000, Vol 35, Num 2, pp 387-390, issn 0022-2461Article

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Microstructural characterisation of alumina with Ti ion implantationJI, H; EVANS, P. J; SAMANDI, M et al.Journal of materials science. 2000, Vol 35, Num 14, pp 3681-3684, issn 0022-2461Article