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Results 1 to 25 of 1712

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Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain ExtensionsMARKOV, Stanislav; XINGSHENG WANG; MOEZI, Negin et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2385-2393, issn 0018-9383, 9 p.Article

Effect of channel-width widening on a poly-Si thin-film transistor structure in the linear regionCHANG, Kow-Ming; LIN, Gin-Ming.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 9, pp 2418-2425, issn 0018-9383, 8 p.Article

A new constant-current technique for MOSFET parameter extractionLU, Chao-Yang; COOPER, James A.Solid-state electronics. 2005, Vol 49, Num 3, pp 351-356, issn 0038-1101, 6 p.Article

Modulation of drain current by redox-active molecules incorporated in Si MOSFETsGOWDA, Srivardhan; MATHUR, Guru; QILIANG LI et al.International Electron Devices Meeting. 2004, pp 707-710, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A semi-empirical approach to analyze small geometry effects in LDD MOSFETsKALRA, Ekta; KUMAR, Anil; HALDAR, Subhasis et al.Microelectronic engineering. 2001, Vol 56, Num 3-4, pp 261-272, issn 0167-9317Article

Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implantsMEZZOMO, Cecilia M; BAJOLET, Aurélie; CATHIGNOL, Augustin et al.Solid-state electronics. 2011, Vol 65-66, pp 163-169, issn 0038-1101, 7 p.Conference Paper

Pseudo-MOSFET Drain-Current Transients: Influence of the SubstratePARK, Kihoon; NAYAK, Pinakpani; SCHRODER, Dieter K et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 993-995, issn 0741-3106, 3 p.Article

Surface-Potential-Based Drain Current Model of Polysilicon TFTs With Gaussian and Exponential DOS DistributionWANLING DENG; JUNKAI HUANG; XIYUE LI et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 1, pp 94-100, issn 0018-9383, 7 p.Article

Measurement of the MOSFET drain current variation under high gate voltageTERADA, Kazuo; CHAGAWA, Tetsuo; JIANYU XIANG et al.Solid-state electronics. 2009, Vol 53, Num 3, pp 314-319, issn 0038-1101, 6 p.Article

Significant aspects of minority-carrier injection in dynamic-threshold SOI MOSFET at low-temperatureOMURA, Yasuhisa; TOCHIO, Takayuki.Cryogenics (Guildford). 2009, Vol 49, Num 11, pp 611-614, issn 0011-2275, 4 p.Conference Paper

A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs : Microelectronic test structures (ICMTS2007)MATSUDA, Toshihiro; SUGIYAMA, Yuya; NOHARA, Keita et al.IEICE transactions on electronics. 2008, Vol 91, Num 8, pp 1331-1337, issn 0916-8524, 7 p.Article

Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient BehaviorPARK, Kihoon; NAYAK, Pinakpani; CRISTOLOVEANU, Sorin et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1269-1276, issn 0018-9383, 8 p.Article

Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETsBAISHYA, Srimanta; MALLIK, Abhijit; CHANDAN KUMAR SARKAR et al.Microelectronic engineering. 2007, Vol 84, Num 4, pp 653-662, issn 0167-9317, 10 p.Article

One-flux theory of saturated drain current in nanoscale transistorsTANG, Ting-Wei; FISCHETTI, Massimo V; JIN, Seonghoon et al.Solid-state electronics. 2012, Vol 78, pp 115-120, issn 0038-1101, 6 p.Conference Paper

Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film TransistorsBAE, Minkyung; YUN, Daeyoun; KIM, Yongsik et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 399-401, issn 0741-3106, 3 p.Article

Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent With Pao―Sah ModelHONGYU HE; XUEREN ZHENG; JIN HE et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 3130-3132, issn 0018-9383, 3 p.Article

Field-effect-transistor type C-reactive protein sensor using cysteine-tagged protein GSOHN, Y.-S; KIM, Y. T.Electronics Letters. 2008, Vol 44, Num 16, pp 955-956, issn 0013-5194, 2 p.Article

On the current saturation in low dimensional MOSFETsBENFDILA, A; BENSIDHOUM, M. T.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 299-302Conference Paper

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Monolayer transistor using a highly ordered conjugated polymer as the channelCAMPBELL SCOTT, J; JEYAPRAKASH SAMUEL, J. D; HOU, Jennifer H et al.Nano letters (Print). 2006, Vol 6, Num 12, pp 2916-2919, issn 1530-6984, 4 p.Article

Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETsORTIZ-CONDE, Adelmo; GARCIA SANCHEZ, Francisco J; MUCI, Juan et al.Solid-state electronics. 2005, Vol 49, Num 4, pp 640-647, issn 0038-1101, 8 p.Article

Subthreshold characteristics of polysilicon TFTsWANLING DENG; XUEREN ZHENG; RONGSHENG CHEN et al.Solid-state electronics. 2008, Vol 52, Num 5, pp 695-703, issn 0038-1101, 9 p.Article

Role of the substrate during pseudo-MOSFET drain current transientsPARK, K; NAYAK, P; SCHRODER, D. K et al.Solid-state electronics. 2010, Vol 54, Num 3, pp 316-322, issn 0038-1101, 7 p.Article

Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETsOKAYAMA, T; ARTHUR, S. D; GARRETT, J. L et al.Solid-state electronics. 2008, Vol 52, Num 1, pp 164-170, issn 0038-1101, 7 p.Article

Linear cofactor difference extrema of MOSFET's drain-current and application to parameter extractionJIN HE; WEI BIAN; YADONG TAO et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 4, pp 874-878, issn 0018-9383, 5 p.Article

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