Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Dren transistor")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 150

  • Page / 6
Export

Selection :

  • and

A new analytical model to determine the drain-source series resistance of FOLD MOSFETKUMAR, A; KALRA, E; HALDAR, S et al.Semiconductor science and technology. 1999, Vol 14, Num 6, pp 489-495, issn 0268-1242Article

Inverted thin-film transistors with a simple self-aligned lightly doped drain structureLIU, C.-T; CHEN-HUA DOUGLAS YU; KORNBLIT, A et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2803-2809, issn 0018-9383Article

Modeling of the MOSFET inversion charge and drain current in moderate inversionALTSCHUL, V; SHACHAM-DIAMAND, Y.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 8, pp 1909-1915, issn 0018-9383, 7 p.Article

Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygatePAWLAK, B. J; DUFFY, R; CAMILLO-CASTILLO, R. A et al.Proceedings - Electrochemical Society. 2005, pp 43-49, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper

Analytical low-frequency 1/f noise model for lightly-doped-drain mosfets operating in the linear regionSHENG-LYANG JANG.Solid-state electronics. 1993, Vol 36, Num 6, pp 899-903, issn 0038-1101Article

A new MOSFET with large-tilt-angle implanted drain (LATID) structureHORI, T; KURIMOTO, K.IEEE electron device letters. 1988, Vol 9, Num 6, pp 300-302, issn 0741-3106Article

Model for drain current RTS amplitude in small-area mos transistorsROUX DIT BUISSON, O; GHIBAUDO, G; BRINI, J et al.Solid-state electronics. 1992, Vol 35, Num 9, pp 1273-1276, issn 0038-1101Article

Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistorsCHATTOPADHYAY, P; MAJUMDAR, L.Semiconductor science and technology. 1998, Vol 13, Num 2, pp 226-230, issn 0268-1242Article

New device degradation due to cold carriers created by band-to-band tunnelingIGURA, Y; MATSUOKA, H; TAKEDA, E et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 227-229, issn 0741-3106Article

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrodeRUI LI; LEE, S. J; YAO, H. B et al.IEEE electron device letters. 2006, Vol 27, Num 6, pp 476-478, issn 0741-3106, 3 p.Article

Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technologyBAKEROOT, B; VERMANDEL, M; DOUTRELOIGNE, J et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 291-294, isbn 88-900847-8-2, 4 p.Conference Paper

Low temperature polycrystalline silicon thin film transistorsJIN JANG; JAI II RYU; SOO YOUNG YOON et al.Vacuum. 1998, Vol 51, Num 4, pp 769-775, issn 0042-207XArticle

Theory of the drain leakage current in silicon MOSFETsTANAKA, S.Solid-state electronics. 1995, Vol 38, Num 3, pp 683-691, issn 0038-1101Article

Temperature dependence of gate induced drain leakage current in silicon CMOS devicesRAIS, K; BALESTRA, F; GHIBAUDO, G et al.Electronics Letters. 1994, Vol 30, Num 1, pp 32-34, issn 0013-5194Article

A new drain engineering structure-SCD-LDD (surface counter doped LDD) for improved hot carrier reliabilityJIH WEN CHOU; CHUN YUN CHANG; LIEN TSE HO et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp L1203-L1205, issn 0021-4922, 2Article

Characteristics of field-induced-drain (FID) poly-Si TFT's with high ON/OFF current ratioTANAKA, K; NAKAZAWA, K; SUYAMA, S et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 4, pp 916-920, issn 0018-9383Article

Design for suppression of gate-induced drain leakage in LDD MOSFET's using a quasi-two-dimensional analytical modelPARKE, S. A; MOON, J. E; WANN, H.-J. C et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 7, pp 1694-1703, issn 0018-9383Article

Ageing of metal-semiconductor field effect transistorsCHATTOPADHYAY, P.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 9, pp 1060-1063, issn 0022-3727Article

A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental wayBANDY, W. R; WINTON, R. S.IEEE transactions on computer-aided design of integrated circuits and systems. 1996, Vol 15, Num 5, pp 475-483, issn 0278-0070Article

P-MOSFET's with ultra-shallow solid-phase-diffused drain structured produced by diffusion from BSG gate-sidewallSAITO, M; YOSHITOMI, T; IWAI, H et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2264-2272, issn 0018-9383Article

MISNAN : a physically based continuous MOSFET model for CAD applicationsBOOTHROYD, A. R; TARASEWICZ, S. W; SLABY, C et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 12, pp 1512-1529, issn 0278-0070Article

Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devicesJAMAL DEEN, M; YAN, Z. X.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 7, pp 1707-1713, issn 0018-9383, 7 p.Article

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanineYANMING SUN; YUNQI LIU; YING WANG et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 3, pp 777-780, issn 0947-8396, 4 p.Article

A new LDD structure : total overlap with polysilicon spacer (TOPS)MOON, J. E; GARFINKEL, T; CHUNG, J et al.IEEE electron device letters. 1990, Vol 11, Num 5, pp 221-223, issn 0741-3106, 3 p.Article

An analytical model for the internal electric field in submicrometer MOSFET'sDEJENFELT, A. T.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 5, pp 1352-1363, issn 0018-9383, 12 p., 0Article

  • Page / 6