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kw.\*:("Drift mobility")

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New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flightJUSKA, G; GENEVICIUS, K; VILIUNAS, M et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 331-335, issn 0022-3093, 5 p., aConference Paper

Anatomy of the drift-diffusion relationshipBRINGUIER, E.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1998, Vol 77, Num 4, pp 959-964, issn 1364-2812Article

Drift-mobility characterization of silicon thin-film solar cells using photocapacitanceLEE, J.-K; HAMZA, A. M; DINCA, S et al.Journal of non-crystalline solids. 2012, Vol 358, Num 17, pp 2194-2197, issn 0022-3093, 4 p.Conference Paper

Ultra high hole mobilities in a pure strained Ge quantum wellMIRONOV, O. A; HASSAN, A. H. A; BERKUTOV, I. B et al.Thin solid films. 2014, Vol 557, pp 329-333, issn 0040-6090, 5 p.Conference Paper

Link between enhanced carrier mobilities and DOS profiles in a-Si:HBRINZA, Monica; EMELIANOVA, Evguenia V; ADRIAENSSENS, Guy J et al.Thin solid films. 2006, Vol 511-12, pp 593-597, issn 0040-6090, 5 p.Conference Paper

Analysis of time-of-flight transient photocurrent in organic semiconductors with coplanar-blocking-electrodes configurationYOSHIKAWA, Takao; NAGASE, Takashi; KOBAYASHI, Takashi et al.Thin solid films. 2008, Vol 516, Num 9, pp 2595-2599, issn 0040-6090, 5 p.Conference Paper

Single crystal diamond for electronic applicationsISBERG, J; HAMMERSBERG, J; TWITCHEN, D. J et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 320-324, issn 0925-9635, 5 p.Conference Paper

On ballistic transport in carbon nanotubesGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.Optik (Stuttgart). 2008, Vol 119, Num 12, pp 601-602, issn 0030-4026, 2 p.Article

Limiting field strength and electron swarm coefficients of the CF3I-SF6 gas mixtureDE URQUIJO, J; MITRANI, A; RUIZ-VARGAS, G et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 34, issn 0022-3727, 342001.1-342001.3Article

The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasmaSHAOYUN HUANG; LI WANG; GANGULY, Gautam et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 347-351, issn 0022-3093, 5 p., aConference Paper

Hole drift mobilities in the glassy state of arylaldehyde and arylketone hydrazonesNISHIMURA, K; INADA, H; KOBATA, T et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 235-242, issn 1056-8816Conference Paper

Modeling of Spatially-Dispersive Wire Media: Transport Representation, Comparison With Natural Materials, and Additional Boundary ConditionsHANSON, George W; FORATI, Ebrahim; SILVEIRINHA, Mário G et al.IEEE transactions on antennas and propagation. 2012, Vol 60, Num 9, pp 4219-4232, issn 0018-926X, 14 p.Article

Virtual drift velocity of electronsTAKEDA, Akihide; IKUTA, Nobuaki.Journal of the Physical Society of Japan. 2004, Vol 73, Num 2, pp 397-403, issn 0031-9015, 7 p.Article

Limitations of hydrodynamic and energy-transport modelsGRASSER, T; SELBERHERR, S.SPIE proceedings series. 2002, pp 584-591, isbn 0-8194-4500-2, 2VolConference Paper

Charge transport in hopping systems under open-circuit conditions: computer simulationSTEPNIK, Piotr; BAK, Grzegorz W.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 39, pp 8455-8465, issn 0953-8984Article

Ionic mobilities in liquid xenonHILT, O; SCHMIDT, W. F; KHRAPAK, A. G et al.IEEE transactions on dielectrics and electrical insulation. 1994, Vol 1, Num 4, pp 648-656, issn 1070-9878Article

Study of electrical and dielectric behavior of Tb+3 substituted Y-type hexagonal ferriteALI, Irshad; SHAHEEN, Nasira; ISLAM, M. U et al.Journal of alloys and compounds. 2014, Vol 617, pp 863-868, issn 0925-8388, 6 p.Article

Solution of the μτ problem in a-Si HKOCKA, J; NEBEL, C. E; ABEL, C. D et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 221-246, issn 0958-6644, 26 p.Article

Theoretical studies of the low-temperature drift mobility in a-Si :HHEUCKEROTH, V; OVERHOF, H; SCHUMACHER, R et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 193-200, issn 0958-6644, 8 p.Article

Phototransport under the presence of a small steady-state photocarrier gratingYUAN-MIN LI.Physical review. B, Condensed matter. 1990, Vol 42, Num 14, pp 9025-9032, issn 0163-1829, 8 p.Article

Influence of deposition parameters on hole mobility in polymorphous siliconBRINZA, M; ADRIAENSSENS, G. J; ABRAMOV, A et al.Thin solid films. 2007, Vol 515, Num 19, pp 7504-7507, issn 0040-6090, 4 p.Conference Paper

Time-of-flight measurements of carrier drift mobilities in polymorphous siliconBRINZA, M; ADRIAENSSENS, G. J; ROCA I. CABARROCAS, P et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 123-126, issn 0040-6090, 4 p.Conference Paper

An argument for potential fluctuations in amorphous-silicon-based alloys, and their effect on solar cell performanceVON ROEDERN, B; MADAN, A.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 293-303, issn 0958-6644, 11 p.Article

Synthesis of new hole-transporting molecular glass with pendant carbazolyl moietiesBUBNIENE, Giedre; MALINAUSKAS, Tadas; GETAUTIS, Vytautas et al.Synthetic metals. 2008, Vol 158, Num 16, pp 670-675, issn 0379-6779, 6 p.Article

Phenyl-, carbazolyl- and fluorenyl-substituted derivatives of indolo[3,2-b]carbazole as hole-transporting glass forming materialsKIRKUS, M; SIMOKAITIENE, J; GRAZULEVICIUS, J. V et al.Synthetic metals. 2010, Vol 160, Num 7-8, pp 750-755, issn 0379-6779, 6 p.Article

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