A systematic dry etching process for profile control of quantum dots and nanoconstrictionsSUTIKNO, Madnarski; HASHIM, Uda; ZUL AZHAR ZAHID JAMAL et al.Microelectronics journal. 2007, Vol 38, Num 8-9, pp 823-827, issn 0959-8324, 5 p.Article

Etching characteristics of multiple U-type internal linear inductively coupled plasma for flat panel displaySEUNG JAE JUNG; KYONG NAM KIM; GEUN YOUNG YEOM et al.Surface & coatings technology. 2005, Vol 200, Num 1-4, pp 780-783, issn 0257-8972, 4 p.Conference Paper

A high-Q quasi-planar filtering solution for 60-GHz applicationsFAURE-MURET, Nicolas; BAILLARGEAT, Dominique; VERDEYME, Serge et al.IEEE microwave and wireless components letters. 2005, Vol 15, Num 5, pp 354-356, issn 1531-1309, 3 p.Article

Deep etching of biocompatible silicone rubberSZMIGIEL, Dariusz; DOMANSKI, Krzysztof; PROKARYN, Piotr et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 1178-1181, issn 0167-9317, 4 p.Conference Paper

Fabrication and characterization of gold coated hollow silicon microneedle array for drug deliveryVINAYAKUMAR, K. B; HEGDE, G. M; NAYAK, M. M et al.Microelectronic engineering. 2014, Vol 128, pp 12-18, issn 0167-9317, 7 p.Article

Effects of various additive gases on chemical dry etching rate enhancement of low-k SiOCH layer in F₂/Ar remote plasmasYUN, Y. B; PARK, S. M; KIM, D. J et al.Thin solid films. 2008, Vol 516, Num 11, pp 3549-3553, issn 0040-6090, 5 p.Conference Paper

Chemical dry etching of silicon oxide in F₂/Ar remote plasmasKANG, S. C; KIM, D. J; HWANG, J. Y et al.Thin solid films. 2007, Vol 515, Num 12, pp 4945-4949, issn 0040-6090, 5 p.Conference Paper

Real-Time Endpoint Detection of Small Exposed Area SiO₂ Films in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component AnalysisHAEGYU JANG; JAEWOOK NAM; KIM, Chang-Koo et al.Plasma processes and polymers (Print). 2013, Vol 10, Num 10, pp 850-856, issn 1612-8850, 7 p.Article

Characteristics of inductively coupled plasma with multiple U-type internal antenna for flat panel display applicationsKYONG NAM KIM; SEUNG JAE JUNG; GEUN YOUNG YEOM et al.Surface & coatings technology. 2005, Vol 200, Num 1-4, pp 784-787, issn 0257-8972, 4 p.Conference Paper

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI₃ plasma chemistriesLIM, W. T; STAFFORD, L; SONG, Ju-Il et al.Applied surface science. 2007, Vol 253, Num 8, pp 3773-3778, issn 0169-4332, 6 p.Article

Fabrication of vertical periodic structure on InP and GaAs using only etching gasKOKUBO, Y; OKAMOTO, S.Electronics Letters. 2007, Vol 43, Num 22, pp 1233-1234, issn 0013-5194, 2 p.Article

Etching characterization of shaped hole high density plasma for using MEMS devicesPARK, W. J; KIM, Y. T; KIM, J. H et al.Surface & coatings technology. 2005, Vol 193, Num 1-3, pp 314-318, issn 0257-8972, 5 p.Conference Paper

Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germaniumCOELHO, S. M. M; AURET, F. D; MYBURG, G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4389-4392, issn 0921-4526, 4 p.Conference Paper

Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O₂ capacitively coupled plasma and inductively coupled plasmaPARK, J. H; LEE, S. H; CHOI, K. H et al.Thin solid films. 2010, Vol 518, Num 22, pp 6465-6468, issn 0040-6090, 4 p.Article

Dry etching process for bulk finFET manufacturingSHAMIRYAN, D; REDOLFI, A; BOULLART, W et al.Microelectronic engineering. 2009, Vol 86, Num 1, pp 96-98, issn 0167-9317, 3 p.Article

Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodesLEE, H. C; PARK, J. B; BAE, J. W et al.Solid-state electronics. 2008, Vol 52, Num 8, pp 1193-1196, issn 0038-1101, 4 p.Article

Oxide nanowire arrays and two-dimensional photonic crystals for control of lightHIRANO, Shingo.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2007, Vol 115, Num 2, pp 92-100, issn 0914-5400, 9 p.Article

Application of the Taguchi's design of experiments to optimize a bromine chemistry-based etching recipe for deep silicon trenchesPING HSUN CHEN; YAU, Colin; KUANG YUNG WU et al.Microelectronic engineering. 2005, Vol 77, Num 2, pp 110-115, issn 0167-9317, 6 p.Article

Dry etching characteristics of GaN for blue/green light-emitting diode fabricationBAIK, K. H; PEARTON, S. J.Applied surface science. 2009, Vol 255, Num 11, pp 5948-5951, issn 0169-4332, 4 p.Article

Study and optimization of room temperature inductively coupled plasma etching of InP using Cl₂/CH₄/H₂ and CH₄/H₂LEE, Chee-Wei; NIE, D; MEI, T et al.Journal of crystal growth. 2006, Vol 288, Num 1, pp 213-216, issn 0022-0248, 4 p.Conference Paper

An anisotropic dry etch process with fluorine chemistry to create well-defined titanium surfaces for biomedical studiesLÖFFLER, R; FLEISCHER, M; KERN, D. P et al.Microelectronic engineering. 2012, Vol 97, pp 361-364, issn 0167-9317, 4 p.Article

Dry etching properties of boron carbon nitride (BCN) films using carbon fluoride gasAOKI, Hidemitsu; TOKUYAMA, Shinji; SASADA, Takashi et al.Diamond and related materials. 2008, Vol 17, Num 7-10, pp 1800-1804, issn 0925-9635, 5 p.Conference Paper

Pyroelectric arrays using ceramics and thin films integrated radiation collectors : Design fabrication and testingWHATMORE, R. W; LANDI, S; SHAW, C. P et al.Ferroelectrics (Print). 2005, Vol 318, pp 11-22, issn 0015-0193, 12 p.Conference Paper

Hydrogen etching of Si₃N₄ layers with plasma assisted hot wire CVDKNIFFLER, Norbert; PFLUEGER, Andrea; SCHULZ, Tobias et al.Thin solid films. 2011, Vol 519, Num 14, pp 4582-4584, issn 0040-6090, 3 p.Conference Paper

A Study on Ohmic Contact to Dry-Etched p-GaN : Heterostructure microelectronics with TWHM 2007HU, Cheng-Yu; AO, Jin-Ping; OKADA, Masaya et al.IEICE transactions on electronics. 2008, Vol 91, Num 7, pp 1020-1024, issn 0916-8524, 5 p.Article