Ultrahigh speed uni-traveling-carrier photodiodes based on materials of short carrier lifetimeJINLIN CHEN; JUNQIANG SUN.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7279, issn 0277-786X, isbn 978-0-8194-7538-1, 72791R.1-72791R.6Conference Paper

Implications of alkaline solutions-induced etching on optical and minority carrier lifetime features of monocrystalline siliconBACHTOULI, N; AOUIDA, S; LAAJIMI, R. Hadj et al.Applied surface science. 2012, Vol 258, Num 22, pp 8889-8894, issn 0169-4332, 6 p.Article

Researching photoelectric parameters of MCT MBE graded band- gap nanolayers with non-homogeneous composition and level of dopingVOITSEKHOVSKII, Alexander V; KOKHANENKO, Andrey P; FILATOV, Michael F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 595719.1-595719.7, issn 0277-786X, isbn 0-8194-5964-X, 1VolConference Paper

Lifetime and efficiency limits of crystalline silicon solar cellsKERR, Mark J; CAMPBELL, Patrick; CUEVAS, Andres et al.sans titre. 2002, pp 438-441, isbn 0-7803-7471-1, 4 p.Conference Paper

Light induced enhancement of minority carrier lifetime of chemically passivated crystalline siliconAOUIDA, S; BACHTOULI, N; BESSAIS, B et al.Applied surface science. 2013, Vol 274, pp 255-257, issn 0169-4332, 3 p.Article

Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formationPORRINI, M; ROSSETTO, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 162-166, issn 0921-5107Conference Paper

DIE FELDSTAERKEBEDINGUNGEN FUER DIE MESSUNG DER TRAEGERLEBENSDAUER IN HALBLEITERKRISTALLEN NACH DER LICHTBLITZMETHODE = LES CONDITIONS DE L'I DU CHAMP POUR LA MESURE DE LA DUREE DE VIE DES PORTEURS DANS LES CRISTAUX SEMICONDUCTEURS PAR LA METHODE DES ECLAIRS LUMINEUXBENDA H; DANNHAUSER F; SPENKE E et al.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 255-262; ABS. ANGL.; BIBL. 13 REF.Serial Issue

Lifetimes of Shockley electrons and holes at Cu(111)VERGNIORY, M. G; PITARKE, J. M; CRAMPIN, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193401.1-193401.4, issn 1098-0121Article

Investigation of charge carrier lifetime in high-resistivity semiconductor layers by the method of small charge photocurrentKALADE, J; MONTRIMAS, E; JANKAUSKAS, V et al.Journal of non-crystalline solids. 1999, Vol 243, Num 2-3, pp 158-167, issn 0022-3093Article

Distribution of recombination centers in high-purity germanium crystalsYAVID, V. Yu; YAKUBENYA, S. N; SHAMAS, Kh. A et al.Inorganic materials. 1998, Vol 34, Num 12, pp 1195-1197, issn 0020-1685Article

INFLUENCE OF DEFORMATION ON THE MOBILITY AND LIFETIMES OF CHARGE-CARRIERS IN ANTHRACENE CRYSTALSARIS FC; LEWIS TJ; THOMAS JM et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 9; PP. 913-917; ABS. FR.; BIBL. 15 REF.Serial Issue

ABSORPTION NON LINEAIRE DE RAYONNEMENT IR DANS INSBDANISHEVSKIJ AM; KOCHEGAROV SF; SUBASHIEV VK et al.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 11; PP. 3233-3239; BIBL. 9 REF.Serial Issue

EFFECT OF CHARGED-CENTRE SCATTERING ON THE MOBILITY OF PHOTO-EXCITED CARRIERS IN DEFECT PHOTOCONDUCTORSSIMMONS JG; TAYLOR GW.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 1; PP. 121-126; BIBL. 10 REF.Serial Issue

MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAPDAPKUS PD; HACKETT WH JR; LORIMOR OG et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 227-229; BIBL. 19 REF.Serial Issue

DETERMINATION DES PARAMETRES DES CENTRES DE PIEGEAGE D'APRES LA VARIATION THERMIQUE DE LA DUREE DE LA VIE DES PORTEURSKORSUNSKIJ MI; RETIVOV NA; KLIMENKO VV et al.1972; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1972; VOL. 207; NO 4; PP. 827-830; BIBL. 8 REF.Serial Issue

Si infrared pixelless photonic emitterMALYUTENKO, V. K; BOGATYRENKO, V. V; MALYUTENKO, O. Yu et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59570D.1-59570D.7, issn 0277-786X, isbn 0-8194-5964-X, 1VolConference Paper

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxyJURSENAS, S; MIASOJEDOVAS, S; KURILCIK, G et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 199-202, issn 0031-8965, 4 p.Conference Paper

High power, drift-free 4H-SiC PiN diodesDAS, Mrinal K; SUMAKERIS, Joseph J; HULL, Brett A et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 236-240, isbn 981-256-196-X, 1Vol, 5 p.Conference Paper

Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structuresGAUBAS, E; SIMOEN, E; CLAEYS, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 1-6, issn 0921-5107Conference Paper

Semiconductor acousto-electric potential detection using a force microscopeKIKUKAWA, A; HOSAKA, S.Applied surface science. 1999, Vol 140, Num 3-4, pp 394-399, issn 0169-4332Conference Paper

Excitonic spontaneous emission in semiconductor quantum wiresCITRIN, D. S.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2117-2122, issn 0018-9197Article

Contamination of silicon by iron at temperatures below 800 °C : SOLAR CELLSMURPHY, J. D; FALSTER, R. J.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 10-11, pp 370-372, issn 1862-6254, 3 p.Article

On the effective carrier lifetime of a silicon p-i-n diode optical modulatorZHENG, D. W; SMITH, B. T; DONG, J et al.Semiconductor science and technology. 2008, Vol 23, Num 6, issn 0268-1242, 064006.1-064006.7Article

OCVD carrier lifetime in P⁺NN⁺ diode structures with axial carrier lifetime gradientBENDA, V; CERNIK, M; PAPEZ, V et al.Microelectronics journal. 2006, Vol 37, Num 3, pp 217-222, issn 0959-8324, 6 p.Conference Paper

Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5 μm laser diodesYIM, J. S; LEE, J. H; OH, D. K et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 190-193, issn 0959-8324, 4 p.Conference Paper