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Substrates for gallium nitride epitaxyLIU, L; EDGAR, J. H.Materials science & engineering. R, Reports. 2002, Vol 37, Num 3, pp III-IV, issn 0927-796X, 69 p.Article

Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystalsHOFFMAN, T. B; CLUBINE, B; ZHANG, Y et al.Journal of crystal growth. 2014, Vol 393, pp 114-118, issn 0022-0248, 5 p.Conference Paper

Growth mechanisms and defect structures of B₁₂As₂ epilayers grown on 4 H-SiC substratesYU ZHANG; HUI CHEN; YIMEI ZHU et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 3-8, issn 0022-0248, 6 p.Conference Paper

Interface properties of an AlN / (AlN), (SiC)_1-x/4H -SiC heterostructureEDGAR, J. H; GU, Z; GU, L et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 15, pp 3720-3725, issn 1862-6300, 6 p.Article

Unstable composition region in the wurtzite B_1-x-yGa_xAl_yN systemWEI, C. H; EDGAR, J. H.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 179-182, issn 0022-0248Article

MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substratesWEI, C. H; XIE, Z. Y; LI, L. Y et al.Journal of electronic materials. 2000, Vol 29, Num 3, pp 317-321, issn 0361-5235Article

Gaseous etching of 6H-SiC at relatively low temperaturesXIE, Z. Y; WEI, C. H; LI, L. Y et al.Journal of crystal growth. 2000, Vol 217, Num 1-2, pp 115-124, issn 0022-0248Article

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AIN/6H-SiC(0001)EDGAR, J. H; YU, Z. J; SMITH, D. J et al.Journal of electronic materials. 1997, Vol 26, Num 12, pp 1389-1393, issn 0361-5235Article

Thermodynamic analysis of Ga_xB_1-xN grown by MOVPEWEI, C. H; EDGAR, J. H.Journal of crystal growth. 2000, Vol 217, Num 1-2, pp 109-114, issn 0022-0248Article

HVPE of scandium nitride on 6H-SiC(0001)EDGAR, J. H; BOHNEN, T; HAGEMAN, P. R et al.Journal of crystal growth. 2008, Vol 310, Num 6, pp 1075-1080, issn 0022-0248, 6 p.Article

Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride SubstratesFENG LI; SHISHKIN, Evgeniy; MASTRO, Michael A et al.Langmuir. 2010, Vol 26, Num 13, pp 10725-10730, issn 0743-7463, 6 p.Article

Sublimation crystal growth of yttrium nitrideLI DU; EDGAR, J. H; PEASCOE-MEISNER, Roberta A et al.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2896-2903, issn 0022-0248, 8 p.Article

Sublimation growth of titanium nitride crystalsLI DU; EDGAR, J. H; KENIK, Edward A et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 1, pp 78-87, issn 0957-4522, 10 p.Article

Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grainsNYAKITI, L. O; CHAUDHURI, J; GU, Z et al.Journal of crystal growth. 2010, Vol 312, Num 23, pp 3479-3484, issn 0022-0248, 6 p.Article

Sublimation growth of aluminum nitride crystalsGU, Z; DU, L; EDGAR, J. H et al.Journal of crystal growth. 2006, Vol 297, Num 1, pp 105-110, issn 0022-0248, 6 p.Article

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The effects of the simultaneous addition of diborane and ammonia on the hot-filament assisted chemical vapor deposition of diamondEDGAR, J. H; XIE, Z. Y; BRASKI, D. N et al.Diamond and related materials. 1998, Vol 7, Num 1, pp 35-42, issn 0925-9635Article

Semiconducting icosahedral boron arsenide crystal growth for neutron detectionWHITELEY, C. E; ZHANG, Y; GONG, Y et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 553-557, issn 0022-0248, 5 p.Conference Paper

ScAIN nanowires: A cathodoluminescence studyBOHNEN, T; YAZDI, G. R; YAKIMOVA, R et al.Journal of crystal growth. 2009, Vol 311, Num 11, pp 3147-3151, issn 0022-0248, 5 p.Article

Native oxide and hydroxides and their implications for bulk AlN crystal growthEDGAR, J. H; DU, L; NYAKITI, L et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 4002-4006, issn 0022-0248, 5 p.Conference Paper

Nucleation of AlN on SiC substrates by seeded sublimation growthLU, P; EDGAR, J. H; LEE, R. G et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 336-342, issn 0022-0248, 7 p.Article

Thermal oxidation of single crystalline aluminum nitrideCHAUDHURI, J; NYAKITI, L; LEE, R. G et al.Materials characterization. 2007, Vol 58, Num 8-9, pp 672-679, issn 1044-5803, 8 p.Conference Paper

The role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN filmsWEI, C. H; EDGAR, J. H; IGNATIEV, C et al.Thin solid films. 2000, Vol 360, Num 1-2, pp 34-38, issn 0040-6090Article