THEORIE DE L'EFFET GUNN DANS LES SEMICONDUCTEURS FORTEMENT DOPESAVAK'YANTS GM; ARUTYUNYAN VM.1974; AKAD. NAUK ARM. S.S.R., DOKL.; S.S.S.R.; DA. 1974; VOL. 59; NO 1; PP. 32-38; BIBL. 5 REF.Article

DYNAMIQUE DE DISPARITION D'UN DOMAINE DE GUNN SORTANT A L'ANODELEVINSHTEJN ME; SIMIN GS.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 5; PP. 903-911; BIBL. 16 REF.Article

DYNAMIQUE DE RESORPTION D'UN DOMAINE DE GUNN POUR UNE TENSION INFERIEURE AU SEUIL DE DISPARITIONLEVINSHTEJN ME; SIMIN GS.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2332-2337; BIBL. 13 REF.Article

ON THE THEORY OF TRANSVERSE EXTENSION OF GUNN DOMAINS.SHARMA SK; SACHDE SC; ASHWINI K et al.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 4; PP. 209-213; BIBL. 9 REF.Article

HIGH RATIO FREQUENCY DIVISION WITH THREE-TERMINAL GUNN EFFECT DEVICES.CLAXTON D; MILLS T; YUAN L et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 195-203; BIBL. 3 REF.Conference Paper

STUDY OF TWO-DIMENSIONAL GUNN DOMAIN DYNAMICS USING A STROBOSCOPIC SEMMASUDA M; OGURA T; KOYAMA J et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 888-889; BIBL. 5 REF.Article

NEW GUNN-EFFECT THREE-TERMINAL PLUSE REGENERATOR BY PLANAR PHOTOLITHOGRAPHY.HARIU T; HARTNAGEL HL.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 4; PP. 451-455; BIBL. 3 REF.Article

GUNN-EFFECT LOGIC CIRCUITS FOR A HIGH SPEED COMPUTER.HASUO S; NAKAMURA T; GOTO G et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 185-194; BIBL. 7 REF.Conference Paper

CALCULATION OF VOLTAGE FLUCTUATIONS AT THE GUNN INSTABILITYKEIZER J.1981; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1981; VOL. 74; NO 2; PP. 1350-1356; BIBL. 40 REF.Article

NEGATIVE CONDUCTANCE MEASUREMENTS OF GUNN DEVICES IN THE X-BAND FREQUENCY RANGE.MATHUR PC; DHALL AK; LOMASH SK et al.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 1; PP. 97-103; BIBL. 11 REF.Article

GAAS PLANAR GUNN DIGITAL DEVICES BY SULPHUR-IONIMPLANTATION. = DISPOSITIFS NUMERIQUES A EFFET GUNN PLANAR GAAS PAR IMPLANTATION IONIQUE DE SOUFREMILUTANI T; KURUMADA K.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 25-26; PP. 638-639; BIBL. 6 REF.Article

PROGRESS WITH IN P TRANSFERRED ELECTRON DEVICES.COLLIVER DJ.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 11-19; BIBL. 12 REF.Miscellaneous

CIRCUIT INTEGRATION OF GAAS GUNN DEVICES.MAUSE K; SCHLACHETZKI A; HESSE E et al.1974; I.E.E.E. TRANS. COMMUNIC.; U.S.A.; DA. 1974; VOL. 22; NO 9; PP. 1435-1440; BIBL. 10 REF.Article

WAVE INTERPRETATION OF NL PRODUCT IN GUNN INSTABILITYLAI HH; BONG HO; STILLMAN GE et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 493-498; ABS. GER; BIBL. 6 REF.Article

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GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS.MAUSE K; SCHLACHETZKI A; HESSE E et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 2-11; BIBL. 21 REF.Article

ETUDES PHYSIQUES DE L'EFFET GUNN (REVUE)LEVINSHTEJN ME; SHUR MS.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 4; PP. 617-649; BIBL. 2 P.Article

OPTICAL-PATTERN SWEEP DEVICE USING GUNN EFFECT.OHWADA K; IGO T.1974; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1974; VOL. 22; NO 11-12; PP. 1108-1115; BIBL. 8 REF.Article

FAULT DETECTION IN COMBINATIONAL CIRCUITS USING GUNN EFFECT LOGIC DEVICESSALUJA KK; LIDGEY FJ.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 222-223; BIBL. 6 REF.Article

LOGIC GATES USING GUNN-EFFECT DEVICES.KAZETANI K; GOTO G; NAKAMURA T et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 4; PP. 99-118; BIBL. 6 REF.Article

EXISTENCE DE MULTIPLES DOMAINES DE CHAMP INTENSE DANS GAAS N EN L'ETAT DE RESISTANCE ABSOLUE NEGATIVEMATULENIS A; PARSHELYUNAS I; REKLAJTIS A et al.1974; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1974; VOL. 14; NO 1; PP. 107-115; ABS. LITU. ANGL.; BIBL. 9 REF.Article

GUNN EFFECT THRESHOLD AND DOMAIN FORMATION IN TRANSVERSE MAGNETIC FIELDS IN INDIUM ANTIMONIDEHEINRICH H; KEELER W.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 4; PP. 171-172; BIBL. 10 REF.Serial Issue

TRANSFERRED ELECTRON DEVICES.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 125-199; BIBL. DISSEM.Conference Paper

GUNN DOMAIN AND MODE SELECTION.SAITO Y.1977; J. PHYS. SOC JAP.; JAP.; DA. 1977; VOL. 43; NO 3; PP. 772-778; BIBL. 12 REF.Article

SUBBAND STRUCTURES OF N-CHANNEL INVERSION LAYERS ON III-V COMPOUNDS. A POSSIBILITY OF THE GATE CONTROLLED GUNN EFFECT.TAKADA Y; UEMURA Y.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 43; NO 1; PP. 139-150; BIBL. 21 REF.Article