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Results 1 to 25 of 99

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GROWTH OF N-ALKANE CRYSTALS ON GRAPHITE AND ON CARBON-FIBRE SURFACESBOUCHER EA.1973; J. MATER. SCI.; G.B.; DA. 1973; VOL. 8; NO 1; PP. 146-148; BIBL. 11 REF.Serial Issue

MOLECULAR ORIENTATION BY SURFACE FORCES. II. ON THE PREDICTION OF ORIENTATION OF CRYSTAL OVERGROWTHSDARLING DF; FIELD BO.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 36; NO 2; PP. 630-640; BIBL. 20 REF.Serial Issue

ELASTIC STRAINS IN EPITAXIAL VACUUM-DEPOSITED GERMANIUM ON SILICONBRIANTE JD; CORBETT JM; BOSWELL FW et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 2; PP. 305-320; BIBL. 14 REF.Serial Issue

OBSERVATIONS OF SPUTTERED THIN FILM GROWTHSHERMAN DM; MAA JS; HUTCHINSON TE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 155-159; BIBL. 22 REF.Serial Issue

THE EFFECT OF SUBSTRATE INHOMOGENEITY ON THE KINETICS OF HETEROGENEOUS NUCLEATION FROM VAPOURSMARKOV I; KASHCHIEV D.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 15; NO 2; PP. 181-189; BIBL. 26 REF.Serial Issue

EPITAXY OF NACL ON MUSCOVITEKOCH FA; VOOK RW.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 2; PP. 231-248; BIBL. 37 REF.Serial Issue

DEPOT HETEROEPITAXIQUE DE COUCHES SEMICONDUCTRICESALEKSANDROV LN.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 2; PP. 120-133; BIBL. 1 P. 1/2Serial Issue

DIE AUTOEPITAKTISCHE ABSCHEIDUNG VON GAAS IM SYSTEM GA(CH3)3-ASH3-H2 = DEPOT AUTOEPITAXIQUE DE GAAS DANS LE SYSTEME GA(CH3)3-ASH3-H2PETZKE WH; GOTTSCHALCH V; BUTTER E et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 177-179; BIBL. 6 REF.Serial Issue

ION BEAM SPUTTERING AND ITS APPLICATION FOR THE DEPOSITION OF SEMICONDUCTING FILMSWEISSMANTEL C; FIELDER O; HECHT G et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 359-366; BIBL. 13 REF.Serial Issue

MECHANISM OF CONDENSATION. I. DIRECT DETERMINATION OF COEFFICIENTS FOR CONDENSATION OF MOLECULAR BEAMS OF SODIUM CHLORIDE ON ORIENTED SINGLE CRYSTALS OF NACLSCHOONMAKER R; LO V.1973; J. CHEM. PHYS.; U.S.A.; DA. 1973; VOL. 58; NO 2; PP. 727-736; BIBL. 24 REF.Serial Issue

CONDITIONS DE FORMATION DE STRUCTURES STABLES ET METASTABLES DANS LES COUCHES MINCES DES COMPOSES AII BVI SUR DES SUPPORTS AMORPHESSHALIMOVA KV; DMITRIEV VA.1972; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1972; NO 11; PP. 85-91; BIBL. 25 REF.Serial Issue

STRUCTURE OF SODIUM CHLORIDE FILMS DEPOSITED ONTO A LEADING EDGE ON FUSED SILICASINCLAIR WR; KAMMLOTT GW; FASTNACHT RA et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 26-29; BIBL. 14 REF.Serial Issue

THE STRUCTURE OF VACUUM DEPOSITED THIN FILMS OF TETRACENERIEMER W; HARDY JV.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 473-482; ABS. ALLEM.; BIBL. 20 REF.Serial Issue

HERSTELLUNG VON FEINKRISTALLINEN ODER AMORPHEN BEO-SCHICHTEN DURCH REAKTIVE VERDAMPFUNG VON BERYLLIUM = PREPARATION DE COUCHES MINCES DE BEO AMORPHE OU FORME DE PETITS CRISTALLITES PAR EVAPORATION REACTIVE DE BEGRUNER H; MOLLENSTEDT G.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 1; PP. 43-47; ABS. ANGL.; BIBL. 12 REF.Serial Issue

THE EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON STOICHIOMETRIC SPINEL AND SAPPHIRE SUBSTRATES USING SILANE-HELIUM MIXTURES VS. SILANE-HYDROGEN MIXTURESCHIANG YS; LOONEY GW.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 550-553; BIBL. 10 REF.Serial Issue

STRUCTURE OF SODIUM CHLORIDE FILMS DEPOSITED ONTO A LEADING EDGE ON FUSED SILICASINCLAIR WR; KAMMLOTT GW; FASTNACHT RA et al.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 26-29; BIBL. 14 REF.Serial Issue

INFLUENCE DE LA SYMETRIE DE LA FACE (110) D'UN CRISTAL DE CHROME SUR L'ORIENTATION DE L'OXYDE FORME EN SURFACEMICHEL P; JARDIN C.1973; VIDE; FR.; DA. 1973; NO 163-165; PP. 106; (COLLOQ. PHYS. CHIM. SURF.; BREST; 1973)Conference Paper

THE DEPOSITION OF THIN FILMS BY THE DECOMPOSITION OF TETRA-ETHOXY SILANE IN A RADIO FREQUENCY GLOW DISCHARGEMUKHERJEE SP; EVANS PE.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 1; PP. 105-118; BIBL. 19 REF.Serial Issue

GROWTH EFFECTS ON STRESS IN NICKEL FILMSSPRINGER RW; HOFFMAN RW.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 238-240; BIBL. 3 REF.Serial Issue

INFLUENCE OF SUBSTRATE TEMPERATURE, DEPOSITION RATE AND SURFACE CONDITIONS ON THE EPITAXIAL GROWTH OF COPPER ON MICAREICHELT K.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 36; NO 2; PP. 725-738; BIBL. 21 REF.Serial Issue

ELASTIC STRAINS IN EPITAXIAL VACUUM-DEPOSITED GERMANIUM ON SILICONBRIANTE JD; CORBETT JM; BOSWELL FW et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 2; PP. 305-320; BIBL. 14 REF.Serial Issue

EPITAXY OF NACL ON MUSCOVITEKOCH FA; VOOK RW.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 2; PP. 231-248; BIBL. 37 REF.Serial Issue

ETUDE DE L'EPITAXIE SILICIUM PAR JET MOLECULAIREGIBEAU P; KOELSCH F.1972; DGRST-71 72 821; FR.; DA. 1972; PP. 1-53; BIBL. 5 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

EFFETS D'ANISOTROPIE LORS DE LA CROISSANCE SELECTIVE DES COUCHES DE GAASBULATOV OS; CHEREPOVSKAYA AV; ANTONOV VA et al.1973; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1973; VOL. 9; NO 2; PP. 186-189; BIBL. 12 REF.Serial Issue

ION BEAM SPUTTERING AND ITS APPLICATION FOR THE DEPOSITION OF SEMICONDUCTING FILMSWEISSMANTEL C; FIELDER O; HECHT G et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 359-366; BIBL. 13 REF.Serial Issue

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