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DUAL IMPLANTATION OF C+ AND GA+ IONS INTO GAAS.SHIN BK; EHRET JE; PARK YS et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2988-2990; BIBL. 13 REF.Article

HALL-EFFECT MEASUREMENTS IN CD-IMPLANTED GAAS.SHIN BK; LOOK DC; PARK YS et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1574-1579; BIBL. 33 REF.Article

ELECTROLUMINESCENCE AND PHOTOVOLTAIC DETECTION IN CD-IMPLANTED CUINSE2 P-N JUNCTION DIODES.WON YU P; PARK YS; FAILE SP et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 717-719; BIBL. 9 REF.Article

GLOW-DISCHARGE OPTICAL SPECTROSCOPY MEASUREMENT OF B-, GE-, AND MG-IMPLANTED GAASWILLIAMSON KR; THEIS WM; YUN SS et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8019-8024; BIBL. 12 REF.Article

AMPHOTERIC BEHAVIOR OF GE IMPLANTS IN GAASYEO YK; EHRET JE; PEDROTTI FL et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 197-199; BIBL. 4 REF.Article

DUAL IMPLANTATION OF GA AND GE INTO GAASPEDROTTI FL; YEO YK; EHRET JE et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5781-5784; BIBL. 9 REF.Article

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