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THE INFLUENCE OF THE COUNTER WALL AND THE COUNTER SHAPE ON THE SPECTRAL ENERGY DEPOSITION IN SMALL VOLUMES BY 60CO GAMMA-RAYS AND 200 KVX-RAYS.EICKEL R; BOOZ J.1976; RAD. ENVIRONMENT. BIOPHYS.; GERM.; DA. 1976; VOL. 13; NO 2; PP. 145-165; BIBL. 1 P.Article

UNTERSUCHUNGEN ZUR ENERGIEUEBERTRAGUNG VON KOENTGEN- UND GAMMASTRAHLEN AN BIOLOGISCHEN MODELLSTRUKTUREN. = ANALYSE DU TRANSFERT D'ENERGIE DES RAYONS GAMMA ET X SUR DES STRUCTURES BIOLOGIQUES MODELESEICKEL R; BOOZ J.1977; BER. KERNFORSCH.-ANLAGE JUELICH; DTSCH.; DA. 1977; NO 1412; PP. 1-96; H.T. 1; BIBL. 6 P. 1/2Serial Issue

Containing papers presented at the International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices, June 13-18, 1999, Beijing, ChinaTU, Hailing; ROZGONYI, George; BULLIS, Murray et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, issn 0921-5107, 138 p.Conference Proceedings

Transition metal (thin-film)/Si (substrate) contacts : buried interface study by soft X-ray emission spectroscopyJINLIAN GWANG; TIANMIN WANG.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 156-159, issn 0921-5107Conference Paper

Effects of forming cavities on the lattice quality and carrier profile in the B doped siliconSHUANGBAO WANG; PEIRAN ZHU.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 142-145, issn 0921-5107Conference Paper

Defect reaction and its application to silicon materials technologySUMINO, K.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 67-72, issn 0921-5107Conference Paper

Current trends in silicon defect technologyBULLIS, W. M.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 93-98, issn 0921-5107Conference Paper

Preparation of copper films by metal organic chemical vapor deposition on various substratesCHO, N.-I; YONGTAE SUL.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 184-188, issn 0921-5107Conference Paper

Oxygen transportation during Czochralski silicon crystal growthHOSHIKAWA, K; XINMING HUANG.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 73-79, issn 0921-5107Conference Paper

Adsorption of LiF on Si(111)-7 x 7 surface studied by scanning tunneling microscopy and low energy electron diffractionHANSHENG GUO; KAWANOWA, H; SOUDA, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 160-163, issn 0921-5107Conference Paper

Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser depositionYOSHITAKE, T; NAGAMOTO, T; NAGAYAMA, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 124-127, issn 0921-5107Conference Paper

In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growthXINMING HUANG; YAMAHARA, K; HOSHIKAWA, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 164-168, issn 0921-5107Conference Paper

Local structure of erbium-oxygen complexes in erbium-doped silicon and its correlation with the optical activity of erbiumPIZZINI, S; BINETTI, S; CALCINA, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 173-176, issn 0921-5107Conference Paper

Investigations on the morphology of silicon surfaces anisotropically etched with TMAHTHONG, J. T. L; BAI, Y; LUO, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 177-179, issn 0921-5107Conference Paper

Random telegraphic signals in rapid thermal annealed silicon-silicon oxide systemCHIM, W. K; CHOI, W. K; LEONG, K. K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 135-137, issn 0921-5107Conference Paper

Hydrogen catalyzed oxygen precipitation in crystalline siliconHUAIXIANG LI; CHENGSHAN XUE; LUSHENG CHEN et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 105-108, issn 0921-5107Conference Paper

Heavily boron-doped Czochralski (CZ) silicon crystal growth : Segregation and constitutional supercoolingTAISHI, T; XINMING HUANG; KUBOTA, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 169-172, issn 0921-5107Conference Paper

Drift diffusion and hydrodynamic simulations of Si/SiGe p-MOSFETsZHAO, Y. P; WATLING, J. R; KAYA, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 180-183, issn 0921-5107Conference Paper

Gettering issues using MeV ion implantationROZGONYI, G. A; GLASKO, J. M; BEAMAN, K. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 87-92, issn 0921-5107Conference Paper

Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsCHOI, W. K; CHONG, N. B; TAN, L. S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 132-134, issn 0921-5107Conference Paper

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keVJUN JIAO; JOHNSON, B; SERAPHIN, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 150-155, issn 0921-5107Conference Paper

Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructureFONSECA, L. F; RESTO, O; SONI, R. K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 109-112, issn 0921-5107Conference Paper

Combinatorial ion synthesis and ion beam analyses of materials libraries on thermally grown SiO2CHEN, C. M; PAN, H. C; ZHU, D. Z et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 113-116, issn 0921-5107Conference Paper

Gap states and stability of rapidly deposited hydrogenated amorphous silicon filmsLIN, S. H; CHAN, Y. C; WEBB, D. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 197-199, issn 0921-5107Conference Paper

Diffusion, solubility and gettering of copper in siliconISTRATOV, A. A; FLINK, C; HIESLMAIR, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 99-104, issn 0921-5107Conference Paper

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