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Physical and technological of VSLIEISELE, I.Lecture notes in physics. 1983, Num 196, pp 23-38, issn 0075-8450Article

EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS.EISELE I; GESCH H; DORDA G et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 7; PP. 677-680; BIBL. 11 REF.Article

ENERGY LEVEL DIFFERENCES IN SURFACE QUANTIZATION MEASURED BY PIEZORESISTANCE EFFECTDORDA G; EISELE I; PREUSS E et al.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 12; PP. 1625-1628; ABS. ALLEM.; BIBL. 11 REF.Serial Issue

MANY-VALLEY INTERACTIONS IN N-TYPE SILICON INVERSION LAYERS.DORDA G; EISELE I; GESCH H et al.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 1785-1798; BIBL. 35 REF.Article

EFFECTIVE MASSES IN (100) SILICON INVERSION LAYERS.EISELE I; GESCH H; DORDA G et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 3; PP. 185-188; BIBL. 13 REF.Article

Local silicon molecular beam epitaxy with microshadow masksHAMMERL, E; EISELE, I.Applied physics letters. 1993, Vol 62, Num 18, pp 2221-2223, issn 0003-6951Article

Growth and characterization of delta type Si-SiO_x-heterostructuresNÖTZEL, R; EISELE, I.Superlattices and microstructures. 1989, Vol 5, Num 4, pp 487-490, issn 0749-6036, 4 p.Article

Growth statics of adsorbates on a one-dimensional surfaceFUENZALIDA, V; EISELE, I.Journal of crystal growth. 1987, Vol 80, Num 2, pp 434-440, issn 0022-0248Article

A new transient capacitance technique for the determination of interface traps in metal-oxide-semiconductor transistorsVITANOV, P; EISELE, I.Journal of applied physics. 1983, Vol 54, Num 9, pp 5227-5230, issn 0021-8979Article

Parallelism, learning, evolutionBECKER, J. D; EISELE, I; MÜNDEMANN, F. W et al.Lecture notes in computer science. 1991, Vol 565, issn 0302-9743, 533 p.Conference Proceedings

Adsorbed water on hydrothermal BaTiO₃ films: work function measurementsFUENZALIDA, V. M; PILLEUX, M. E; EISELE, I et al.Vacuum. 1999, Vol 55, Num 1, pp 81-83, issn 0042-207XArticle

Modulation-doped superlattices with delta layers in siliconZEINDL, H. P; WEGEHAUPT, T; EISELE, I et al.Thin solid films. 1990, Vol 184, pp 21-29, issn 0040-6090, 9 p.Conference Paper

A new effusion cell arrangement for fast and accurate control of material evaporation under vacuum conditionsBECK, A; JUNGEN, H; BULLEMER, B et al.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 5-8Article

Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devicesRUPP, T; MESSAROSCH, J; EISELE, I et al.Journal of crystal growth. 1998, Vol 183, Num 1-2, pp 99-108, issn 0022-0248Article

Direct capacitance measurements of small geometry MOS transistorsVITANOV, P; DIMITROVA, T; EISELE, I et al.Microelectronics journal. 1991, Vol 22, Num 7-8, pp 77-89, issn 0959-8324Article

Ozone cleaning of the Si-SiO₂ systemBAUMGÄRTNER, H; FUENZALIDA, V; EISELE, I et al.Applied physics. A, Solids and surfaces. 1987, Vol 43, Num 3, pp 223-226, issn 0721-7250Article

STM studies of C₆₀ on a Si(1 1 1):B surface phaseSTIMPEL, T; SCHRAUFSTETTER, M; BAUMGÄRTNER, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 394-398, issn 0921-5107Conference Paper

Growth of highly textured aluminum films on LiTaO₃ with optimized titanium intermediate layersNÜSSL, R; SENFT, C; BECKMEIER, D et al.Thin solid films. 2011, Vol 519, Num 22, pp 8154-8160, issn 0040-6090, 7 p.Article

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processingCHIUSSI, S; GONTAD, F; RODRIGUEZ, R et al.Applied surface science. 2008, Vol 254, Num 19, pp 6030-6033, issn 0169-4332, 4 p.Conference Paper

Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor depositionWIEST, F; CAPODIECI, V; BLANK, O et al.Thin solid films. 2006, Vol 496, Num 2, pp 240-246, issn 0040-6090, 7 p.Article

Lateral ordering of Ge islands on Si mesas made by selective epitaxial growthVESCAN, L; STOICA, T; HOLLÄNDER, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 49-53, issn 0921-5107Conference Paper

Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiersJOHANSSON, Ted; NI, Wei-Xin.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 88-92, issn 0921-5107Conference Paper

Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopyJERNIGAN, Glenn G; THOMPSON, Phillip E; TWIGG, Mark E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 133-140, issn 0921-5107Conference Paper

Low temperature epitaxial silicon films deposited by ion-assisted depositionWAGNER, T. A; OBERBECK, L; BERGMANN, R. B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 319-322, issn 0921-5107Conference Paper